IXUN350N10 - Digi-Key

IXUN350N10
Trench Power MOSFET
Very low RDS(on)
VDSS
=100V
ID25
=350A
RDS(on) typ. = 1.9mΩ
SOT-227 B,
miniBLOC
D
KS
G
G
KS
S
S
D
G = Gate, D = Drain,
S = Source, KS = Kelvin Source
Features
MOSFET
Conditions
VDSS
TVJ = 25°C to 150°C
Maximum Ratings
100
± 20
TC = 25°C; limited by leads
TC = 90°C
ID(RMS)
Package lead current limit
PD
TC = 25°C
Symbol
Conditions
V
350
265
A
A
150
A
830
W
e-
ID25
ID90
V
ou
VGS
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
as
min.
RDSon
on chip level: VGS = 10 V
ID = 175 A; pulse test
t < 300 µs; duty cycle < 2%
Rpin to chip
RDS = RDS(on) + Rpin to chip
VGS(th)
VDS = VGS; ID = 3 mA
IDSS
VDS = VDSS; VGS = 0 V
IGSS
VGS = ± 10 V; VDS = 0 V
Ciss
Coss
Crss
VGS = 0 V; VDS = 25 V; f = 1 MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
RthJC
RthCH
ph
TVJ = 25°C
TVJ = 125°C
typ.
max.
1.9
4
2.5
0.8
2
TVJ = 25°C
TVJ = 125°C
mW
mW
mW
4
V
30
1.5
µA
mA
± 300
nA
27
3
2
nF
nF
nF
VGS = 10 V; VDS = 80 V; ID = 300 A
640
135
275
nC
nC
nC
VGS = 10 V;
VDS = 50 V;
ID = 250 A;
RG = 1.9 Ω (external)
115
175
650
150
1.0
3.1
0.32
ns
ns
ns
ns
mJ
mJ
mJ
TVJ = 125°C
0.18
with heat transfer paste
0.06
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
•trench MOSFET
•very low on state resistance RDSon
•fast switching
•fast body diode
•industry standard outline
•isolated package
•high reliability
t
Symbol
Applications
•automotive
•converters for fuel cells
•AC drives
•choppers to replace series dropping
resistors used for motors, heaters etc.
•DC-DC converters
•electronic switches
•replacing relays and fuses
•power supplies
•solar inverters
•battery supplied systems
•choppers or inverters for motor control
in hand tools
•battery chargers
Advantages
•Easy to mount
•Space savings
•High power density
K/W
K/W
20070926a
-5
IXUN350N10
SOT-227 B, miniBLOC
Source-Drain Diode
Symbol
Characteristic Values
Conditions
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
300
A
ISM
Repetitive, pulse width limited by TJM
550
A
VSD
IF = 250 A; VGS = 0 V
Pulse test, t < 300 µs, duty cycle < 2%
1.3
V
trr
IRM
QRR
1.1
120
35
2.8
IF = 350 A; -diF /dt = 600 A/µs; VR = 50 V
Dim.
ns
A
µC
Component
Maximum Ratings
TVJ
Tstg
operating
storage
VISOL
50/60 Hz, RMS, IISOL < 1 mA
Md
mounting torque
terminal connection torque
Symbol
Conditions
-55...+150
-55...+150
°C
°C
2500
3000
V~
V~
t = 1 min
t=1s
1.5
1.5
t
Conditions
Nm
Nm
ou
Symbol
Characteristic Values
min.
Weight
typ.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Inches
Min. Max. Min. Max.
31.5 31.88
1.24 1.255
7.8
8.2 0.307 0.323
4.09
4.29 0.161 0.169
4.09
4.29 0.161 0.169
4.09
4.29 0.161 0.169
14.91 15.11 0.587 0.595
30.3 1.186 1.193
30.12
37.8 38.23 1.489 1.505
0.46 0.481
11.68 12.22
8.92
9.6 0.351 0.378
0.76
0.84
0.03 0.033
12.6 12.85 0.496 0.506
0.99 1.001
25.15 25.42
2.13
0.78 0.084
1.98
4.95
5.97 0.195 0.235
26.54
26.9 1.045 1.059
3.94
4.42 0.155 0.174
4.72
4.85 0.186 0.191
24.59 25.07 0.968 0.987
-0.05
0.1 -0.002 0.004
0.18
3.3
4.57
0.13
0.78
0.83
19.81 21.08
max.
g
ph
as
e-
30
Product Marking
abcde
Logo
YWWi
DateCode
Part No.
XXXXXX
Assembly Code
Ordering
Part Name
Marking on Product
Delivering Mode
Base Qty.
Code Key
Standard
IXUN350N10
IXUN350N10
Tube
10
501384
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070926a
-5
IXUN350N10
400
1.2
1.1
300
1.0
ID - [A]
VDSS [V] normalized
IDSS = 0.25 mA
0.9
200
100
0.8
0.7
-25
0
0
25
50
75
100
125
150
TJ = 125°C
TJ = 25°C
0
1
2
3
VGS [V]
TJ [°C]
Fig. 1 Drain source breakdown voltage VDSS
vs. junction temperature TJ
200
400
5V
4.5 V
100
300
4.5 V
TJ = 125°C
100
4V
4V
0
1
2
0
3
VDS [V]
VGS = 10 V
ID = 175 A
2
RDS(on) normalized
1
0
25
50
75
100
VGS = 4 V
4
3
RDS(on)
1
125
0
150
TJ [°C]
Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2
3
4
5
RDS(on) [m:]
2
1
Fig. 4 Typical output characteristic
RDS(ON) - normalized
ph
3
0
VDS [V]
Fig. 3 Typical output characteristic
RDS(on) normalized
5V
200
as
0
6
5.5 V
ou
300
VGS =
6V
6,5 V
7V
10 V
15 V
20 V
e-
ID [A]
TJ = 25°C
5.5 V
6V
6.5 V
7V
10 V
15 V
20 V
400
500
t
VGS=
5
Fig. 2 Typical transfer characteristic
ID [A]
500
4
4,5 V
5V
TJ = 125°C
3
5.5 V
6V
2
6.5 V
7V
10 V
15 V
1
0
20 V
0
100
200
300
400
500
ID [A]
Fig. 6 Drain source on-state
resistance RDS(on) versus ID
20070926a
-5
IXUN350N10
12
400
IC = 300 A
VDS = 80 V
10
TJ = 175°C
300
ID - [A]
VGS [V]
8
6
200
4
100
2
200
400
600
800
0
1000
0
40
80
0.8
150
100
Eon
0
50
0
0
100 150 200 250 300 350 400
ID [A]
1.2
0.8
0
2
4
6
8
360
8
240
180
ID = 350 A
120
10
12
0
1800
td(off)
1400
tf
0
2
4
6
8
10
1000
800
600
TJ = 125°C
2
0
IXYS reserves the right to change limits, test conditions and dimensions.
ID = 350 A
3
0
Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching
VCE = 50 V
VGE = +10/0 V
Eoff
4
1
1600
1200
5
60
14
200
100 150 200 250 300 350 400
6
RG [:]
© 2007 IXYS All rights reserved
50
7
300
VCE = 50 V
VGE = +10/0 V
TJ = 125°C
0.4 Erec(off)
0.0
td(on)
9
Eoff [mJ]
Eon
1.6
tr
tf
Eoff
Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching
420
t [ns]
2.0
ph
Eon, Erec(off) [mJ]
2.4
400
TJ = 125°C
0
600
ID [A]
Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching
2.8
td(off)
RG = 1.9 :
2
1
50
Erec(off)
800
VCE = 50 V
VGE = +10/0 V
3
e-
0.0
4
1000
ou
td(on)
200
Eoff [mJ]
TJ = 125°C
5
t [ns]
RG = 1.9 :
250
as
Eon, Erec(off) [mJ]
tr
VCE = 50 V
VGE = +10/0 V
0.4
200
Fig. 8 Drain current ID vs. case temperature TC
2.0
1.2
160
t
Fig.7 Gate charge characteristic
1.6
120
TC [°C]
QG [nC]
t [ns]
0
t [ns]
0
12
400
200
0
14
RG [:]
Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching
20070926a
-5
IXUN350N10
160
80
IF = 75 A
140
60
175 A
100
80
IRM [A]
trr [ns]
120
70
VR = 50 V
TJ = 125°C
350 A
60
20
10
200
400
600
0
800 1000 1200 1400
350 A
30
20
0
175 A
40
40
0
IF = 75 A
50
VR = 50 V
TJ = 125°C
0
200
400
Fig. 13 Reverse recovery time trr
of the body diode vs. di/dt
8
VGS = 0 V
175 A
400
IF = 75 A
7
6
350 A
5
IF [A]
Qrr [µC]
t
500
VR = 50 V
TJ = 125°C
9
4
300
200
e-
3
2
TJ = 25°C
125°C
150°C
100
0
200
400
600
0
as
1
0
800 1000 1200 1400
Fig. 14 Reverse recovery current IRM
of the body diode vs. di/dt
ou
10
600
-diF/dt [A/µs]
-diF /dt [A/µs]
800 1000 1200 1400
0.0
0.2
0.4
-diF /dt [A/µs]
ph
1.2
1.4
1.6
Fig. 16 Source drain diode current IF vs.
source drain voltage VSD (body diode)
t
0,9 I D
0,9 I D
0,1 I D
0,1 I D
t d(off)
t
tf
Thermal Response [K/W]
0,1 VGS
VDS
ID
tr
1.0
0.30
0,9 VGS
t d(on)
0.8
VSD [V]
Fig. 15 Reverse recovery charge Qrr
of the body diode vs. di/dt
VGS
0.6
0.25
0.20
0.15
0.10
0.05
0.00
IXUN35N10
1
10
100
1000
10000
t [ms]
Fig. 17
Definition of switching times
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Fig. 18 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste
20070926a
-5