IXUN350N10 Trench Power MOSFET Very low RDS(on) VDSS =100V ID25 =350A RDS(on) typ. = 1.9mΩ SOT-227 B, miniBLOC D KS G G KS S S D G = Gate, D = Drain, S = Source, KS = Kelvin Source Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings 100 ± 20 TC = 25°C; limited by leads TC = 90°C ID(RMS) Package lead current limit PD TC = 25°C Symbol Conditions V 350 265 A A 150 A 830 W e- ID25 ID90 V ou VGS Characteristic Values (TVJ = 25°C, unless otherwise specified) as min. RDSon on chip level: VGS = 10 V ID = 175 A; pulse test t < 300 µs; duty cycle < 2% Rpin to chip RDS = RDS(on) + Rpin to chip VGS(th) VDS = VGS; ID = 3 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = ± 10 V; VDS = 0 V Ciss Coss Crss VGS = 0 V; VDS = 25 V; f = 1 MHz Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec(off) RthJC RthCH ph TVJ = 25°C TVJ = 125°C typ. max. 1.9 4 2.5 0.8 2 TVJ = 25°C TVJ = 125°C mW mW mW 4 V 30 1.5 µA mA ± 300 nA 27 3 2 nF nF nF VGS = 10 V; VDS = 80 V; ID = 300 A 640 135 275 nC nC nC VGS = 10 V; VDS = 50 V; ID = 250 A; RG = 1.9 Ω (external) 115 175 650 150 1.0 3.1 0.32 ns ns ns ns mJ mJ mJ TVJ = 125°C 0.18 with heat transfer paste 0.06 IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved •trench MOSFET •very low on state resistance RDSon •fast switching •fast body diode •industry standard outline •isolated package •high reliability t Symbol Applications •automotive •converters for fuel cells •AC drives •choppers to replace series dropping resistors used for motors, heaters etc. •DC-DC converters •electronic switches •replacing relays and fuses •power supplies •solar inverters •battery supplied systems •choppers or inverters for motor control in hand tools •battery chargers Advantages •Easy to mount •Space savings •High power density K/W K/W 20070926a -5 IXUN350N10 SOT-227 B, miniBLOC Source-Drain Diode Symbol Characteristic Values Conditions (TVJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V 300 A ISM Repetitive, pulse width limited by TJM 550 A VSD IF = 250 A; VGS = 0 V Pulse test, t < 300 µs, duty cycle < 2% 1.3 V trr IRM QRR 1.1 120 35 2.8 IF = 350 A; -diF /dt = 600 A/µs; VR = 50 V Dim. ns A µC Component Maximum Ratings TVJ Tstg operating storage VISOL 50/60 Hz, RMS, IISOL < 1 mA Md mounting torque terminal connection torque Symbol Conditions -55...+150 -55...+150 °C °C 2500 3000 V~ V~ t = 1 min t=1s 1.5 1.5 t Conditions Nm Nm ou Symbol Characteristic Values min. Weight typ. A B C D E F G H J K L M N O P Q R S T U V W Millimeter Inches Min. Max. Min. Max. 31.5 31.88 1.24 1.255 7.8 8.2 0.307 0.323 4.09 4.29 0.161 0.169 4.09 4.29 0.161 0.169 4.09 4.29 0.161 0.169 14.91 15.11 0.587 0.595 30.3 1.186 1.193 30.12 37.8 38.23 1.489 1.505 0.46 0.481 11.68 12.22 8.92 9.6 0.351 0.378 0.76 0.84 0.03 0.033 12.6 12.85 0.496 0.506 0.99 1.001 25.15 25.42 2.13 0.78 0.084 1.98 4.95 5.97 0.195 0.235 26.54 26.9 1.045 1.059 3.94 4.42 0.155 0.174 4.72 4.85 0.186 0.191 24.59 25.07 0.968 0.987 -0.05 0.1 -0.002 0.004 0.18 3.3 4.57 0.13 0.78 0.83 19.81 21.08 max. g ph as e- 30 Product Marking abcde Logo YWWi DateCode Part No. XXXXXX Assembly Code Ordering Part Name Marking on Product Delivering Mode Base Qty. Code Key Standard IXUN350N10 IXUN350N10 Tube 10 501384 IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20070926a -5 IXUN350N10 400 1.2 1.1 300 1.0 ID - [A] VDSS [V] normalized IDSS = 0.25 mA 0.9 200 100 0.8 0.7 -25 0 0 25 50 75 100 125 150 TJ = 125°C TJ = 25°C 0 1 2 3 VGS [V] TJ [°C] Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TJ 200 400 5V 4.5 V 100 300 4.5 V TJ = 125°C 100 4V 4V 0 1 2 0 3 VDS [V] VGS = 10 V ID = 175 A 2 RDS(on) normalized 1 0 25 50 75 100 VGS = 4 V 4 3 RDS(on) 1 125 0 150 TJ [°C] Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 2 3 4 5 RDS(on) [m:] 2 1 Fig. 4 Typical output characteristic RDS(ON) - normalized ph 3 0 VDS [V] Fig. 3 Typical output characteristic RDS(on) normalized 5V 200 as 0 6 5.5 V ou 300 VGS = 6V 6,5 V 7V 10 V 15 V 20 V e- ID [A] TJ = 25°C 5.5 V 6V 6.5 V 7V 10 V 15 V 20 V 400 500 t VGS= 5 Fig. 2 Typical transfer characteristic ID [A] 500 4 4,5 V 5V TJ = 125°C 3 5.5 V 6V 2 6.5 V 7V 10 V 15 V 1 0 20 V 0 100 200 300 400 500 ID [A] Fig. 6 Drain source on-state resistance RDS(on) versus ID 20070926a -5 IXUN350N10 12 400 IC = 300 A VDS = 80 V 10 TJ = 175°C 300 ID - [A] VGS [V] 8 6 200 4 100 2 200 400 600 800 0 1000 0 40 80 0.8 150 100 Eon 0 50 0 0 100 150 200 250 300 350 400 ID [A] 1.2 0.8 0 2 4 6 8 360 8 240 180 ID = 350 A 120 10 12 0 1800 td(off) 1400 tf 0 2 4 6 8 10 1000 800 600 TJ = 125°C 2 0 IXYS reserves the right to change limits, test conditions and dimensions. ID = 350 A 3 0 Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching VCE = 50 V VGE = +10/0 V Eoff 4 1 1600 1200 5 60 14 200 100 150 200 250 300 350 400 6 RG [:] © 2007 IXYS All rights reserved 50 7 300 VCE = 50 V VGE = +10/0 V TJ = 125°C 0.4 Erec(off) 0.0 td(on) 9 Eoff [mJ] Eon 1.6 tr tf Eoff Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching 420 t [ns] 2.0 ph Eon, Erec(off) [mJ] 2.4 400 TJ = 125°C 0 600 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching 2.8 td(off) RG = 1.9 : 2 1 50 Erec(off) 800 VCE = 50 V VGE = +10/0 V 3 e- 0.0 4 1000 ou td(on) 200 Eoff [mJ] TJ = 125°C 5 t [ns] RG = 1.9 : 250 as Eon, Erec(off) [mJ] tr VCE = 50 V VGE = +10/0 V 0.4 200 Fig. 8 Drain current ID vs. case temperature TC 2.0 1.2 160 t Fig.7 Gate charge characteristic 1.6 120 TC [°C] QG [nC] t [ns] 0 t [ns] 0 12 400 200 0 14 RG [:] Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 20070926a -5 IXUN350N10 160 80 IF = 75 A 140 60 175 A 100 80 IRM [A] trr [ns] 120 70 VR = 50 V TJ = 125°C 350 A 60 20 10 200 400 600 0 800 1000 1200 1400 350 A 30 20 0 175 A 40 40 0 IF = 75 A 50 VR = 50 V TJ = 125°C 0 200 400 Fig. 13 Reverse recovery time trr of the body diode vs. di/dt 8 VGS = 0 V 175 A 400 IF = 75 A 7 6 350 A 5 IF [A] Qrr [µC] t 500 VR = 50 V TJ = 125°C 9 4 300 200 e- 3 2 TJ = 25°C 125°C 150°C 100 0 200 400 600 0 as 1 0 800 1000 1200 1400 Fig. 14 Reverse recovery current IRM of the body diode vs. di/dt ou 10 600 -diF/dt [A/µs] -diF /dt [A/µs] 800 1000 1200 1400 0.0 0.2 0.4 -diF /dt [A/µs] ph 1.2 1.4 1.6 Fig. 16 Source drain diode current IF vs. source drain voltage VSD (body diode) t 0,9 I D 0,9 I D 0,1 I D 0,1 I D t d(off) t tf Thermal Response [K/W] 0,1 VGS VDS ID tr 1.0 0.30 0,9 VGS t d(on) 0.8 VSD [V] Fig. 15 Reverse recovery charge Qrr of the body diode vs. di/dt VGS 0.6 0.25 0.20 0.15 0.10 0.05 0.00 IXUN35N10 1 10 100 1000 10000 t [ms] Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Fig. 18 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste 20070926a -5