SEMICONDUCTOR GM400HB06CT TECHNICAL DATA 600V/400A 2 IN ONE PACKAGE TENTATIVE FEATURES ・IGBT New Technology Unit : mm OUTLINE DRAWING ・Low VCE(sat) ・Low Turn-off losses _ 0.2 108.5 + _ 0.2 _ 0.2 28 + 28 + _ 0.2 6.5 + ・Short tail current G2 E2 _ 0.2 62.5 + APPLICATION ・AC & DC Motor controls E1 G1 ・General purpose inverters _ 0.2 15 + _ 0.2 27 + ・Positive temperature coefficient M6 ・Optimized for high current inverter _ 0.2 93 + ・Servo Controls _ 0.2 108.5 + ・UPS, Robotics _ 0.2 18 + _ 0.2 14 + _ 0.2 18 + _ 0.2 14 + _ 0.2 1.3 + _ 0.2 31.6 + _ 0.2 30.45 + _ 0.2 18 + _ 0.2 14 + G2 E2 C2E1 C1 E1 G1 E2 Internal Circuit MAXIMUM RATING (@Ta=25℃ Per Leg) CHARACTERISTIC @TC=25℃ Collector-to-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @TC=25℃ SYMBOL RATING UNIT VCES 600 V VGES ±20 V 500 IC @TC=125℃ @TC=25℃ Pulsed Collector Current Diode Continuous Forward Current @TC=25℃ ICP @TC=25℃ @TC=25℃ Short Circuit Test 800 A 500 IF @TC=125℃ Diode Maximum Forward Current A 400 A 400 IFM 800 10 tP @TC=125℃ 8 A ㎲ Viso 2500 V Junction Temperature Tj -40 ~ 150 ℃ Storage Temperature Tstg -40 ~ 125 ℃ Weight 360 g 4.0 N.m 4.0 N.m Isolation Voltage test AC @ 1 minute Weight of Module Mounting Torque with screw : M6 Md Terminal Connection torque : M6 2009. 3. 5 Revision No : 0 1/3 GM400HB06CT STATIC CHARACTERISTICS (@Tj=25℃ Unless otherwise specified) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-to-Emitter Saturation Volatge VCE(ON) IC = 400A, VGE=15V 1.05 1.50 1.95 Gate Threshold Voltage VGE(th) IC = 8mA, VCE=VGE 5.0 5.8 6.5 Zero Gate Voltage Collector Current ICES VGE=0V, VCE=600V - - 5.0 mA Gate-to-Emitter Leakage Volatge IGES VCE=0V, VCE=20V - - 400 nA Diode Forward Voltage Drop VFM IF = 400A, VGE=0V - 1.6 2.0 V - 1.0 - Ω MIN. TYP. MAX. UNIT - 24670 - - 1540 - - 732 - - 70 - - 25 - - 260 - - 60 - 600 - - V - - 350 ㎂ - 125 - ns - 20 - μC V RGINT Integrated gate resistor - ELECTRICAL CHARACTERISTICS (IGBT/DIODE)(@Ta=25℃ Unless otherwise specified) CHARACTERISTIC SYMBOL TEST CONDITION IGBT Input Capacitance Cies Ouput Capacitance Coes Reverse Transfer Capacitance Cres Turn-On Delay Time td(on) tr Rise Time td(off) Turn-Off Delay Time VCE=25V, VGE=0V, f=1MHz Inductive Switching 125℃ VCC=300V, IC=400A, ns VGE=±15V,RG=2.2Ω tr Fall Time nF DIODE Maximum Peak Repetitive Reverse Voltage Maximum Reverse Ieakage current VRRM IRM VR=600V trr Reverse Recovery Time Qrr Reverse Recovery Charge IF=400A, VR=300V, di/dt=4000A/㎲ THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL MIN TYP MAX. Junction to Case (IGBT Part, Per 1/2 Module) Rth(j-c) - - 0.12 Junction to Case (Didoe Part, Per 1/2 Module) Rth(j-c) - - 0.24 Case to Heat Sink (Conductive grease applied) Rth(j-s) - 0.03 - UNIT ℃/W ※ Data and specifications subject to change without notice. 2009. 3. 5 Revision No : 0 2/3 GM400HB06CT Fig 1. Typ. IGBT Output Characteristics IGBT Fig 2. Typ. IGBT Out Characteristics 800 800 Tvj=25 C Tvj=125 C Tvj=150 C 720 640 560 560 480 480 IC (A) IC (A) 640 VGE=19V VGE=17V VGE=15V VGE=13V VGE=11V VGE=9V 720 400 320 400 320 240 240 160 160 80 80 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 0.5 1.0 1.5 VCE (V) 2.5 3.0 3.5 4.0 4.5 5.0 VCE (V) Fig 3. Typ. Transfer Characteristics IGBT Fig 4. Reverse Bias Operating Area IGBT 800 900 Tvj=25 C Tvj=125 C Tvj=150 C 720 640 800 700 560 600 480 IC (A) IC (A) 2.0 400 320 500 400 300 240 160 200 80 100 0 0 5 6 7 8 9 10 11 VGE =15V, RG=2.4Ω, Tj=125 C 0 100 200 300 400 500 600 700 VCE (V) VGE (V) Fig 5. Forward Characteristics of Diode IGBT 800 Tvj=25 C Tvj=125 C Tvj=150 C 720 640 IF (A) 560 480 400 320 240 160 80 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF (V) 2009. 3. 5 Revision No : 0 3/3