SEMICONDUCTOR KML0D3P20TV TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES _ + _ + ・VDSS=-20V, ID=-0.3A ・Drain-Soure ON Resistance _ + _ + _ + : RDS(ON)=1.2Ω @ VGS=-4.5V : RDS(ON)=1.6Ω @ VGS=-2.5V _ + _ + : RDS(ON)=2.7Ω @ VGS=-1.8V MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL P-Ch UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±6 V DC @TA=25℃ Drain Current -300 ID* DC @TA=85℃ -210 mA Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient IDP -650 IS 125 P D* 170 mW Tj 150 ℃ Tstg -55～150 ℃ RthJA* 730 ℃/W Note 1) *Surface Mounted on FR4 Board, t≤5sec 2013. 2. 25 Revision No : O 1/2 KML0D3P20TV ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS ID= -250μA, VGS=0V -20 - - V Drain Cut-off Current IDSS VGS=0V, VDS= -16V - -0.3 -100 nA Gate Leakage Current IGSS VGS=±4.5V, VDS=0V - ±1.0 ±2.0 μA Gate Threshold Voltage Vth VDS=VGS, ID= -250μA -0.45 - -1.0 V VGS= -4.5V, ID= -300mA - 0.80 1.20 VGS= -2.5V, ID= -250mA - 1.20 1.60 VGS= -1.8V, ID= -150mA - 1.80 2.70 VDS= -10V, ID= -300mA - 0.4 - S IS= -150mA, VGS=0V - -0.8 -1.2 V - 1500 - - 150 - Drain-Source Breakdown Voltage RDS(ON)* Drain-Source ON Resistance gfs* Forward Transconductance Source-Drain Diode Forward Voltage VSD* Ω Dynamic Total Gate Charge Qg* Gate-Source Charge QgS* Gate-Drain Charge Qgd* - 450 - Turn-on Delay time td(on)* - 5 - - 3 - - 15 - - 8 - Turn-on Rise time Turn-off Delay time Turn-off Fall time tr td(off)* VDS= -10V, ID= -250mA, VGS= -4.5V VDD= -10V, VGS= -4.5V ID= -200mA, RG=10Ω tf pC ns Note 2) *Pulse test : Pulse width≤300㎲, Duty Cycle≤2%. 2013. 2. 25 Revision No : O 2/2 KML0D3P20TV 2013. 2. 25 Revision No : O 3/4 KML0D3P20TV 2013. 2. 25 Revision No : O 4/4