SEMICONDUCTOR KMA3D0N20SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. E B FEATURES L D L 2 H A 3 G ・VDSS=20V, ID=3A ・Drain to Source on-state Resistance 1 RDS(ON)=55mΩ(Max.) @ VGS=4.5V Q RDS(ON)=110mΩ(Max.) @ VGS=2.5V P P K J N C ・Super Hige Dense Cell Design DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M SOT-23 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL N-Ch UNIT Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V DC@Ta=25℃ (Note1) ID 3 Pulsed (Note1) IDP 12 Ta=25℃ (Note1) Ta=70℃ (Note1) Drain Current A 1.25 PD Drain Power Dissipation W 0.8 Tj 150 ℃ Tstg -55～150 ℃ RthJA 100 ℃/W Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient KNB (Note1) Note1) Surface Mounted on 1”×1”FR4 Board, t≤5sec. PIN CONNECTION (TOP VIEW) D 3 3 2009. 8. 17 2 1 G S 2 Revision No : 2 1 1/4 KMA3D0N20SA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 20 - - V Static Drain to Source Breakdown Voltage BVDSS IDS=250μA, VGS=0V, Drain Cut-off Current IDSS VGS=0V, VDS=16V - - 1 μA Gate to Source Leakage Current IGSS VGS=±10V, VDS=0V - - ±100 nA Gate to Source Threshold Voltage Vth VDS=VGS, ID=250μA 0.5 0.8 1.5 V VGS=4.5V, ID=2.5A (Note2) - 38 55 VGS=2.5V, ID=1A (Note2) - 55 110 VGS=4.5V, VDS=5V (Note2) 12 - - A VDS=5V, ID=2.5A (Note2) - 6 - S - 280 - - 64 - - 34 - - 4.0 - - 0.9 - RDS(ON) Drain to Source On Resistance ID(ON) On State Drain Current gfs Forward Transconductance mΩ Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS=10V, VGS= 0V, f=1MHz VDS=10V, VGS=4.5V, pF Gate to Source Charge Qgs Gate to Drain Charge Qgd - 0.9 - Turn-On Delay Time td(on) - 6.3 - - 7.0 - - 7.3 - - 6.2 - - - 3.0 A - - 12 A - - 1.2 V tr Turn-On Rise Time ID=2.5A (Note2) VDD=10V, VGS=4.5V nC ns td(off) Turn-Off Delay Time ID=1A, RG=6Ω (Note2) tf Turn-Off Fall Time Source-Drain Diode Ratings Continuous Source Current IS - Pulsed Source Current ISP - Source to Drain Forward Voltage VSDF VGS=0V, IS=1.25A (Note2) NOTE 2) Pulse Test : Pulse width <300㎲ , Duty cycle < 2% 2009. 8. 17 Revision No : 2 2/4 KMA3D0N20SA 2009. 8. 17 Revision No : 2 3/4 KMA3D0N20SA 2009. 8. 17 Revision No : 2 4/4