SEMICONDUCTOR KMA4D5P20X TECHNICAL DATA P-CH Trench MOSFET General Description It’s mainly suitable for battery pack or power management in cell phone, and PDA. A F FEATURES 6 VDSS=-20V, ID=-4.5A. C 4 B1 Drain-Source ON Resistance. : RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A 1 E B 3 : RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A Super High Dense Cell Design for Extremely Low RDS(ON) DIM A B B1 C D D1 D2 E F G G D1 D D2 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 12 DC ID * 4.5 Pulsed IDP* 16 IS Continuous Source Current Ta=25 Drain Power Dissipation -1.3 Ta=70 Storage Temperature Range Thermal Resistance, Junction to Ambient TSOP-6 V A Marking A 2.0 PD * Type Name W 1.3 MPA Tj 150 Tstg -55 150 RthJA * 62.5 Maximum Junction Temperature * : Surface Mounted on 1 0~0.10 _ 0.08 0.45 + _ 0.05 0.95 + _ 0.05 0.40 + ) CHARACTERISTIC Drain Current MILLIMETERS _ 0.05 2.926 + _ 0.15 2.80 + _ 0.05 1.626 + _ 0.05 0.15 + 1.25 MAX _ 0.05 1.10 + Lot No. /W 1 FR4 Board, t 5sec. PIN CONNECTION (TOP VIEW) D DDD D 1 6 D D 2 5 D G 3 4 S G S 2006. 8. 22 Revision No : 1 1/5 KMA4D5P20X ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ID=-250 A, VGS=0V -20 - - V VGS=0V, VDS=-20V - - -1 - - -5 -0.6 - -1.3 - - Static BVDSS Drain-Source Breakdown Voltage Drain Cut-off Current IDSS Gate Threshold Voltage Vth VDS=VGS, ID=-250 A Gate Leakage Current IGSS VGS= VGS=0V,VDS=-16V, (Note 3) 12V, VDS=0V 100 VGS=-4.5V, ID=-4.5A (Note 2) - 49 60 VGS=-2.5V, ID=-3.3A (Note 2) - 85 110 - 7 - VDS=-10V, RD=2.2 - 8.5 - VGS=-4.5V - 1.8 - - 2.9 - - 12 - - 32 - - 64 - - 40 - Drain-Source ON Resistance RDS(ON) Forward Transconductance gfs VDS=-5V, ID=-4.5A Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) Dynamic Tj=70 (Note 2) A V nA m S (Note 3) tr Turn-on Rise time td(off) Turn-off Delay time (Fig.1) VDS=-10V, RD=2.2 VGS=-4.5V RG=6 (Fig.2) tf Turn-off Fall time nC ns Source-Drain Diode Ratings IS Continuous Source Current VSD Diode Forward Voltage VGS < Vth (Note 1) - - -1.3 A IS=-4.5A, VGS=0V (Note 2) - - -1.3 V Note 1) Based on thermal dissipation from junction to ambient while mounted on a 1 Note 2) Pulse test : Pulse width 300 1 FR4 Board. , Duty Cycle 2% Note 3) Guaranteed by design, not subject to production testing. 2006. 8. 22 Revision No : 1 2/5 KMA4D5P20X ID - VDS ID - VGS 20 -20 VD=VG Drain Current ID (A) -5V 16 -3V -4.5V -4V 12 -2.5V 8 -2V 4 Drain Current ID (A) -3.5V -55 C 25 C -15 125 C -10 -5 -1.5V 0 0 0 -0.5 -1 -1.5 -2 -2.5 0 -3 -1 Drain - Source Voltage VDS (V) -2 0.4 ID= -250µA 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -75 -50 -25 0 25 50 75 0.32 0.24 0.16 VGS = -2.5V 0.08 VGS = -4.5V 0 100 125 150 -5 0 Junction Temperature Tj ( C) -10 1.6 Normalized On Resistance Reverse Drain Current IS (A) 1.5 -10 Tj=150 C Tj=25 C -0.1 -0.2 -0.4 -0.6 -0.8 Source - Drain Voltage VSD (V) 2006. 8. 22 -20 RDS(ON) - Tj -100 -1 -15 Drain Current ID (A) IS - VSD -0 -5 RDS(ON) - ID On - Resistance RDS(ON) (mΩ) Normalized Threshold Voltage Vth 0.4 -4 Gate - Source Voltage VGS (V) Vth - Tj 0.5 -3 Revision No : 1 -1 -1.2 VGS = -4.5V ID = -4.2A 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -75 -50 -25 0 25 50 75 100 125 150 Junction Temperture Tj ( C ) 3/5 KMA4D5P20X Qg - VGS C - VDS -5 1000 Gate - Source Voltage VGS (V) Capacitance (pF) 800 Ciss 600 400 Coss 200 VD = -10V ID = -4.5A Frequency = 1MHz Crss 0 -5 0 -15 -10 -4 -3 -2 -1 0 0 -20 2 Drain - Source Voltage VDS (V) 4 6 8 10 Gate - Charge Qg (nC) Normalized Transient Thermal Resistance Rth 101 100 Duty=0.5 0.2 10-1 0.1 0.05 0.02 PDM t1 10-2 - Duty Factor, D= t1/t2 Tj(max) - Ta - RthJA = PD Single Pulse 10-3 10-4 t2 10-3 10-2 10-1 100 101 102 103 Square Wave Pulse Duration (sec) 2006. 8. 22 Revision No : 1 4/5 KMA4D5P20X Fig. 1 Gate Charge VGS -4.5 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig. 2 Resistive Load Switching td(on) RL VGS 0.5 VDSS ton tr td(off) toff tf 10% 6Ω VDS -4.5 V VGS VDS 2006. 8. 22 Revision No : 1 90% 5/5