SEMICONDUCTOR KMA3D6N20SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. E B FEATURES L D L 2 H A 3 G ・VDSS=20V, ID=3.6A ・Drain-Source ON Resistance 1 RDS(ON)=45mΩ(Max.) @ VGS=4.5V Q RDS(ON)=65mΩ(Max.) @ VGS=2.5V P P K J N C ・Super Hige Dense Cell Design DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M SOT-23 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V DC ID 3.6 Pulsed IDP 14 Drain-Source-Diode Forward Current IS 1.25 Drain Current A TA=25℃ KNC A 1.25 PD Drain Power Dissipation W TA=70℃ 0.8 Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ Thermal Resistance, Junction to Ambient RthJA 100 ℃/W Maximum Junction Temperature Note : Surface Mounted on FR4 Board, t≤10sec. PIN CONNECTION (TOP VIEW) D 3 3 2012. 8. 22 2 1 G S 2 Revision No : 2 1 1/5 KMA3D6N20SA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 20 - - V Static Drain-Source Breakdown Voltage BVDSS IDS=250μA, VGS=0V, Drain Cut-off Current IDSS VGS=0V, VDS=16V - - 1 μA Gate Leakage Current IGSS VGS=±10V, VDS=0V - - ±100 nA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 0.6 0.9 1.5 V VGS=4.5V, ID=2.5A - 32 45 VGS=2.5V, ID=2A - 50 65 10 - - A - 8 - S - 437 - - 87 - Drain-Source ON Resistance On-State Drain Current Forward Transconductance RDS(ON)* ID(ON)* gfs* mΩ VGS=4.5V, VDS=5V VDS=5V, ID=3A Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 51 - Total Gate Charge Qg* - 6.6 - Gate-Source Charge Qgs* - 0.8 - Gate-Drain Charge Qgd* - 1.85 - Turn-On Delay Time td(on)* - 13 - Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDS=15V, VGS= 0V, f=1MHz, VDS=10V, VGS=4.5V, ID=3.5A tr* VDD=10V, VGS=4.5V - 19 - td(off)* ID=1A, RG=6Ω(NOTE 1) - 85 - - 47 - - 0.81 1.2 tf* pF nC ns Source-Drain Diode Ratings Source-Drain Forward Voltage VSDF* VGS=0V, IDR=1.25A V NOTE 1> * : Pulse Test : Pulse width <300㎲ , Duty cycle < 2% 2012. 8. 22 Revision No : 2 2/5 KMA3D6N20SA 2012. 8. 22 Revision No : 2 3/5 KMA3D6N20SA 2012. 8. 22 Revision No : 2 4/5 KMA3D6N20SA Fig9. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 2.0 mA Q VDS Qgd Qgs Qg VGS Fig10. Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2012. 8. 22 Revision No : 2 td(off) tf toff 5/5