SEMICONDUCTOR KMA2D4P20S TECHNICAL DATA P-Ch Trench MOSFET General Description It’s mainly suitable for use as a load switch in battery powered applications. E B FEATURES VDSS=-20V, ID=-2.4A. DIM MILLIMETERS _ 0.05 A 2.926 + _ 0.05 B 1.626 + 1.25 MAX C _ 0.05 D 0.40 + _ 0.15 E 2.80 + _ 0.10 G 1.90 + _ 0.05 H 0.95 + _ 0.05 J 0.15 + 0.00 ~ 0.10 K _ 0.08 M 0.45 + _ 0.05 N 1.10 + : RDS(ON)=100m (Max.) @ VGS=-4.5V. D Drain-Source ON Resistance. 3 1 J N M K C H G A 2 : RDS(ON)=175m (Max.) @ VGS=-2.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 12 DC ID * -2.4 Pulsed (Note1) IDP* -9 IS * -0.9 Drain Current Source-Drain Diode Current Drain Power Dissipation Ta=25 Ta=100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient * : Surface Mounted on 1 2006. 4. 6 PD * 1.0 0.6 Tj 150 Tstg -55 150 RthJA * 125 SOT-23 V A A W PIN CONNECTION Top View D 3 /W 1 FR4 Board, t 5sec. Revision No : 0 2 1 G S 1/5 KMA2D4P20S ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ID=-250 A, VGS=0V, -20 - - V VGS=0V, VDS=-20V - - -1 VGS=0V, VDS=-16V, Tj=70 - - -5 -0.6 - - V - - 100 nA Static BVDSS Drain-Source Breakdown Voltage Drain Cut-off Current IDSS Gate Threshold Voltage Vth VDS=VGS, ID=-250 A Gate Leakage Current IGSS VGS= RDS(ON) Drain-Source ON Resistance ID(ON) ON State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage 12V, VDS=0V A VGS=-4.5V, ID=-2.4A (Note 1) - 88 100 VGS=-2.5V, ID=-1.8A (Note 1) - 146 175 VGS=-4.5V, VDS=-5V (Note 1) -9 - - A - 4 - S - - -1.3 V - 4 - - 0.6 - - 1.4 - - 6.5 - - 13 - - 15 - - 20 - gfs VDS=-5V, ID=-2.4A VSD IS=-2.4A, VGS=0V (Note 1) (Note 1) m Dynamic (Note 2) Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=-15V, RD=5.6 VGS=-4.5V VDS=-15V, RL=5.6 , VGS=-4.5V, RG=6 tf Turn-off Fall time Note 1) Pulse test : Pulse width 300 (Fig.1) (Fig.2) nC ns , Duty Cycle 2%. Note 2) Guaranteed by design. Not subject to production testing. 2006. 4. 6 Revision No : 0 2/5 KMA2D4P20S ID - VDS -8 Drain Current ID (A) -9 -4V -3.5V -4.5V -7 -3V -5V -2.5V -6 -5 -4 -2V -3 -2 VGS = -1.5V -1 -7 Tj=25 C -6 Tj= -55 C -5 Tj=125 C -4 -3 -2 -1 0 0 -2 -1 0 0 -3 -2 RDS(ON) - ID 300 ID= -250µA 0.3 0.2 0.1 0 -0.1 -5 Ta=25 C 250 200 VGS = -2.5V 150 100 VGS = -4.5V 50 0 -50 -25 0 25 50 75 0 100 125 150 -2 -6 -4 -8 Drain Current ID (A) RDS(ON) - Tj IS - VSD 1.6 Normalized On Resistance -100 Reverse Drain Current IS (A) -4 Vth - Tj Junction Temperature Tj ( C) Tj=150 C -10 Tj=25 C -1 -0.1 1.4 VGS = -4.5V IDS =-2.7A 1.2 1.0 0.8 0.6 0 -0.2 -0.4 -0.6 -0.8 Source - Drain Voltage VSD (V) 2006. 4. 6 -3 Gate - Source Voltage VGS (V) 0.4 -0.2 -75 -1 Drain - Source Voltage VDS (V) On - Resistance RDS(ON) (mΩ) Normalized Threshold Voltage Vth VD = VG -8 Drain Current ID (A) -9 ID - VGS Revision No : 0 -1 -1.2 -75 -50 -25 0 25 50 75 100 125 150 Junction Temperture Tj ( C ) 3/5 KMA2D4P20S Qg - VGS C - VDS -5 750 Gate - Source Voltage VGS (V) Frequency = 1MHz Capacitance (pF) 600 450 Ciss 300 150 Coss Crss 0 -5 0 -15 -10 VD = -15V ID = -2.7A -4 -3 -2 -1 0 0 -20 1 Drain - Source Voltage VDS (V) 2 3 4 5 Gate - Charge Qg (nC) Normalized Transient Thermal Resistance Rth 101 1 10-1 0.5 PDM 0.2 t1 0.1 10-2 t2 0.02 0.01 10-3 10-4 - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD Single Pluse 10-3 10-2 10-1 1 101 102 103 Square Wave Pulse Duration (sec) 2006. 4. 6 Revision No : 0 4/5 KMA2D4P20S Fig. 1 Gate Charge VGS -4.5 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig. 2 Resistive Load Switching RL td(on) VGS 0.5 VDSS ton tr td(off) toff tf 10% 6Ω VDS -4.5 V VGS VDS 2006. 4. 6 Revision No : 0 90% 5/5