SEMICONDUCTOR KMA010P20Q TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES H T VDSS=-20V, ID=-10A. P D L G Drain-Source ON Resistance. : RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A. : RDS(ON)=24m (Max.) @ VGS=-2.5V, ID=-7.6A. A 8 5 B1 B2 1 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 12 DC ID * 10 Pulsed (Note1) IDP* 48 IS * -2.3 Drain Current Source-Drain Diode Current Ta=25 PD * Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient 2007. 3. 22 FLP-8 V A A 1.6 W 0.625 Ta=100 * : Surface Mounted on 1 MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 ) CHARACTERISTIC Drain Power Dissipation 4 DIM A B1 B2 D G H L P T Tj 150 Tstg -55 150 RthJA * 80 /W 1 FR4 Board, t 5sec. Revision No : 1 1/5 KMA010P20Q ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ID=-250 A, VGS=0V, -20 - - V VGS=0V, VDS=-20V - - -1 VGS=0V, VDS=-16V, Tj=70 - - -5 -0.6 - - V - - 100 nA Static BVDSS Drain-Source Breakdown Voltage IDSS Drain Cut-off Current Gate Threshold Voltage Vth VDS=VGS, ID=-250 A Gate Leakage Current IGSS VGS= RDS(ON) Drain-Source ON Resistance ID(ON) ON State Drain Current VGS=-4.5V, ID=-10A (Note 1) - 11 14 VGS=-2.5V, ID=-7.6A (Note 1) - 18 24 VGS=-4.5V, VDS=-5V (Note 1) -48 - - A - 31 - S - - -1.1 V - 36 - - 5 - gfs VDS=-5V, ID=-10A VSD IS=-10A, VGS=0V Forward Transconductance Source-Drain Diode Forward Voltage 12V, VDS=0V A (Note 1) (Note 1) m Dynamic (Note 2) Qg Total Gate Charge VDS=-10V, RD=1.0 Gate-Source Charge Qgs Gate-Drain Charge Qgd - 13 - Turn-on Delay time td(on) - 10 - - 72 - - 78 - - 108 - tr Turn-on Rise time VGS=-4.5V, RG=6 tf Turn-off Fall time Note 1) Pulse test : Pulse width 300 , Duty Cycle (Fig.1) VDD=-10V, RD=1.0 , td(off) Turn-off Delay time VGS=-4.5V nC ns (Fig.2) 2%. Note 2) Guaranteed by design. Not subject to production testing. 2007. 3. 22 Revision No : 1 2/5 KMA010P20Q 2007. 3. 22 Revision No : 1 3/5 KMA010P20Q 2007. 3. 22 Revision No : 1 4/5 KMA010P20Q 2007. 3. 22 Revision No : 1 5/5