SEMICONDUCTOR KTK921U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR/DVD/Set Top Box Tuner FEATURES Low loss at on state(Typ 1dB@1GHz) E M With built-in bias diode 4 2 3 D J 1 H L C A Gate 3.3V operating M B N N K DIM A B C D E H J K L M N MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.15+0.1/-0.06 1.30 0.00 ~ 0.10 0.70 0.42 0.10 MIN 1. Diode Cathode 2. FET Gate & Diode Anode 3. FET Drain 4. FET Source FET Maximum Ratings (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source-Voltage VDS Drain-Gate-Voltage VDG 7 V Source-Gate-Voltage VSG 7 V ID 10 mA SYMBOL RATING UNIT Reverse Voltage VR 35 V Forword Current IF 100 mA Drain Current DIODE Maximum Ratings (Ta=25 3 USQ V EQUIVALENT CIRCUIT 4(S) 3(D) 1(C) 2(G,A) ) CHARACTERISTIC Marking 4 FET DIODE Maximum Ratings (Ta=25 CHARACTERISTIC Type Name ) SYMBOL RATING UNIT Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55~150 Storage Temperature Range 2010. 2. 17 Revision No : 0 3 Lot No. MC 1 2 1/2 KTK921U FET ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate-Source Breakdown Voltage V(BR)GSS VDS=0, IGS=-0.1mA -7 - - V Gate-Source Pinch-off Voltage VGS(OFF) VDS=1V, ID=20 A - -1.9 -2.5 V Drain-Source Leakage Current IDSX VDS=2V, VGS=-3.3V - - 10 A Gate Cut-off Current IGSS VDS=0, VGS=-3.3V - - -100 nA VGS=0, ID=1mA - 20 25 - - -2.5 dB RDS(ON) Drain-Source On-State Resistance S21(ON) 2 Loss(On-State) Note1 S21(OFF) 2 Isolation (Off-State) Note1 Cic Input Capacitance Note2 Coc Output Capacitance Note2 VSC=VDC=0, RS=RL=50 , IF=0, f 1GHz VSC=VDC=0, RS=RL=50 , IF=0, f=1GHz - -1.3 - dB VSC=VDC=0, RS=RL=75 , IF=0, f 1GHz - - -3.5 dB VSC=VDC=3.3V, RS=RL=50 , IF=1mA, f 1GHz -30 - - dB VSC=VDC=3.3V, RS=RL=50 , IF=1mA, f= 1GHz - -38 - dB VSC=VDC=3.3V, RS=RL=75 , IF=1mA, f 1GHz -30 - - dB VSC=VDC=5V, IF=1mA, f=1MHz - 1 - pF VSC=VDC=0, IF=0, f=1MHz - 0.65 - pF VSC=VDC=5V, IF=1mA, f=1MHz - 1 - pF VSC=VDC=0, IF=0, f=1MHz - 0.65 - pF MIN TYP MAX UNIT V Note : 1 IF=Diode Forward Current 2 Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc; DIODE ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL ) TEST CONDITIONS Forward Voltage VF IF=2mA - - 0.85 Reverse Current IR VR=15V - - 0.1 Reverse Voltage VR IR=1 35 - - V Total Capacitance CT VR=6V, f=1MHz - 0.7 1.2 pF Series Resistance rS IF=2mA, f=100MHz - 0.5 0.9 Fig. S21(on) 2 S21(off) 2 Test Circuit V 1nF 100kΩ On-State : V=0V Off-State : V=3.3V 47kΩ 50Ω Input 50Ω Output 1nF 1nF 4.7kΩ 100kΩ V 2010. 2. 17 1nF Revision No : 0 2/2