SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. A O C Suitable for half bridge light ballast Applications. F Low base drive requirement. E MAXIMUM RATING (Ta=25 G ) CHARACTERISTIC B SYMBOL RATING UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Q I IC 5 Pulse ICP 10 Base Current IB 2 A Collector Power Dissipation (Tc=25 ) PC 75 W Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range P M L J D DC Collector Current K N A H N 1 2 3 1 2 3 1. BASE 2. COLLECTOR DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q 3. EMITTER Equivalent Circuit C TO-220AB B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) E SYMBOL IEBO VEB=9V, IC=0 MIN. TYP. MAX. UNIT - - 10 A hFE(1) VCE=5V, IC=1A 18 - 35 hFE(2) VCE=5V, IC=2A 8 - - IC=1A, IB=0.2A - - 0.5 IC=2A, IB=0.5A - - 0.6 IC=4A, IB=1A - - 1 IC=1A, IB=0.2A - - 1.2 IC=2A, IB=0.5A - - 1.6 Cob VCB=10V, f=1MHz - 65 - pF Transition Frequency fT VCE=10V, IC=0.5A 4 - - MHz Turn-On Time ton - - 0.15 S 150Ω Emitter Cut-off Current TEST CONDITION 2 - 5 S VCC =300V - - 0.8 S IF=2A - - 1.6 V IF=0.4A - 800 - nS IF=1A - 1.4 - S IF=2A - 1.9 - S DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance VCE(sat) VBE(sat) OUTPUT 300µS INPUT tstg Storage Time Fall Time tf Diode Forward Voltage VF *Reverse recovery tims (di/dt=10A/ S) trr IB1=0.4A, IB2=-1A DUTY CYCLE < = 2% V I B1 IB1 IB2 V I B2 *Pulse Test : Pulse Width = 5mS, Duty cycles 10% Note : hFE Classification R : 18~27, O : 23~35 2009. 2. 26 Revision No : 4 1/4 MJE13005D Fig 2. VBE(sat),VCE(sat) - IC VCE=1V Ta=125 C -20 C 25 C 10 1 0.01 0.1 1 10 0.1 VCE(sat) 0.01 0.01 0.1 1 10 Fig 4. Cob - VCB VCE=5V Ta=125 C 25 C -20 C 10 0.1 1 10 COLLECTOR OUTPUT CAPACITANCE Cob (pF) DC CURRENT GAIN hFE VBE(sat) 1 Fig 3. hFE - IC 1 0.01 COLLECTOR CURRENT IC (A) IC/IB=4 COLLECTOR CURRENT IC (A) 100 1k COMMON EMITTER f=1MHz Ta=25 C 500 300 100 50 30 10 5 3 1 1 3 10 30 100 300 1k COLLECTOR CURRENT IC (A) COLLECTOR-BASE VOLTAGE VCB (V) Fig 5. IC - VCE Fig 6. SWITCHING CHARACTERISTIC 5 10 IB=500mA IB=400mA IB=300mA 4 IB=200mA 3 IB=100mA 2 IB=50mA 1 0 1 2 3 4 5 6 7 8 9 tf 0.1 VCC=300V 0.01 10 COLLECTOR EMITTER VOLTAGE VCE (V) Revision No : 4 tstg 1 IC=5IB1,=-2.5IB2 IB=0V 0 2009. 2. 26 10 COLLECTOR CURRENT IC (A) SWITCHING TIME (µS) DC CURRENT GAIN hFE 100 COLLECTOR-EMITTER SATURATION VOLTAGE VBE(sat),VCE(sat) (V) Fig 1. hFE - IC 0.1 1 10 COLLECTOR CURRENT IC (A) 2/4 MJE13005D Fig 8. VF - IF 1.6 1.4 1.2 1.0 0.8 1.0 1.5 2.0 FORWARD DIODE VOLTAGE VF (V) REVERSE RECOVERY TIME trr (µS) Fig 7. trr - IF 10 1 0.1 0.01 FORWARD CURRENT IF (A) 0.1 1µs 10µs 1ms 5ms DC 0.1 0.01 10 100 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR POWER DISSIPATION PC (W) COLLECTOR CURRENT IC (A) 100 1 10 FORWARD DIODE CURRENT IF (A) Fig 10. PC - Ta Fig 9. SAFE OPERATING AREA 10 1 100 Tc=Ta INFINITE HEAT SINK 80 60 40 20 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE Ta ( C) COLLECTOR CURRENT IC (pk) (A) Fig 11. REVERSE BIASED SAFE OPERATING AREA 10 IB1=2A VBE(off)=-6.5V L=50 H VCC=20V 9 8 7 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 900 COLLECTOR-EMITTER CLAMP VOLTAGE VCE (V) 2009. 2. 26 Revision No : 4 3/4 MJE13005D REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS LC (3) IB1 T.U.T IC (1) IB VCE VClamp 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier VCC RBB(2) VBB + For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 11 gives the complete RBSOA characteristics. 2009. 2. 26 Revision No : 4 4/4