KERSEMI IRFR2607ZTRR

AUIRFR2607Z
Features
l
l
l
l
l
l
l
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
75V
RDS(on) typ.
17.6mΩ
max.
G
S
Description
22mΩ
ID (Silicon Limited)
45A k
ID (Package Limited)
42A
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
G
D
S
D-Pak
AUIRFR2607Z
Absolute Maximum Ratings
G
D
S
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
c
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy (Thermally limited)
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB mount)
RθJA
Junction-to-Ambient
c
j
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h
g
i
d
k
45
32
42
180
110
0.72
± 20
96
96
See Fig.12a, 12b, 15, 16
A
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
y
Typ.
–––
–––
–––
y
Max.
1.38
50
110
Units
°C/W
1
08/24/10
AUIRFR2607Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
75
–––
–––
2.0
36
–––
–––
–––
–––
–––
0.074
17.6
–––
–––
–––
–––
–––
–––
–––
–––
22
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 30A
V VDS = VGS, ID = 50µA
S VDS = 25V, ID = 30A
VDS = 75V, VGS = 0V
µA
VDS = 75V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Conditions
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
34
8.9
14
14
59
39
28
51
–––
–––
–––
–––
–––
–––
–––
4.5
–––
–––
7.5
–––
–––
–––
–––
–––
–––
–––
1440
190
110
720
130
230
–––
–––
–––
–––
–––
–––
nC
ns
nH
pF
ID = 30A
VDS = 60V
VGS = 10V
VDD = 38V
ID = 30A
RG = 15 Ω
VGS = 10V
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
f
Diode Characteristics
Parameter
IS
ISM
VSD
trr
Qrr
ton
2
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
Min. Typ. Max. Units
45
k
–––
–––
–––
–––
180
–––
–––
–––
–––
30
28
1.3
45
42
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 30A, VDD = 38V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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AUIRFR2607Z
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments:
This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
D PAK
MSL1
Class M4(425V)
(per AEC-Q101-002)
ESD
Human Body Model
Class H1B(1000V)
(per AEC-Q101-001)
Charged Device
Model
RoHS Compliant
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.21mH
RG = 25Ω, IAS = 30A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
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Class C5(1125V)
(per AEC-Q101-005)
Yes
… Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
† This value determined from sample failure population. 100%
tested to this value in production.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
ˆ Rθ is measured at TJ approximately 90°C
‰ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 42A
3
AUIRFR2607Z
1000
1000
100
BOTTOM
TOP
10
1
4.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
4.5V
10
≤ 60µs PULSE WIDTH
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
60
Gfs, Forward Transconductance (S)
1000.0
ID, Drain-to-Source Current(Α)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
VDS = 20V
≤ 60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10.0
TJ = 25°C
50
40
TJ = 175°C
30
20
10
VDS = 10V
380µs PULSE WIDTH
0
0
10
20
30
40
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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AUIRFR2607Z
2400
VGS, Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
Ciss
1200
800
400
Coss
Crss
VDS = 60V
VDS= 30V
VDS= 12V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
ID= 30A
10
0
100
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000.0
ISD, Reverse Drain Current (A)
20
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
100.0
TJ = 175°C
10.0
1.0
10
TJ = 25°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100µsec
10
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1msec
DC
0.1
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.4
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFR2607Z
50
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
LIMITED BY PACKAGE
ID , Drain Current (A)
40
30
20
10
0
25
50
75
100
125
150
ID = 30A
VGS = 10V
2.0
1.5
1.0
0.5
175
-60 -40 -20
TC , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response ( ZthJC )
10
1
D = 0.50
0.20
0.10
0.1
τJ
0.05
0.02
0.01
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ2
τ
Ri (°C/W) τi (sec)
0.71826 0.000423
0.66173 0.004503
Ci= τi/Ri
Ci i/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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15V
DRIVER
L
VDS
D.U.T
RG
20V
VGS
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
AUIRFR2607Z
400
I D
3.5A
4.8A
BOTTOM 30A
TOP
300
200
100
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
QGD
5.0
VGS(th) Gate threshold Voltage (V)
10 V
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
DUT
0
1K
ID = 1.0A
ID = 1.0mA
ID = 250µA
ID = 50µA
4.5
4.0
3.5
3.0
2.5
VCC
2.0
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage Vs. Temperature
7
AUIRFR2607Z
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
100
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 30A
80
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFR2607Z
D.U.T
Driver Gate Drive
ƒ
+
‚
„
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
• dv/dt controlled by R G
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
*

RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRFR2607Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Part Number
AUFR2607Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
10
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AUIRFR2607Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11