KERSEMI IRFR5305TRPBF

PD-95025A
IRFR5305PbF
IRFU5305PbF
l
l
l
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Ultra Low On-Resistance
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET® Power MOSFET
D
VDSS = -55V
RDS(on) = 0.065Ω
G
ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET® Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
IRFR5305
I-Pak
IRFU5305
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient**
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Typ.
Max.
Units
–––
–––
–––
1.4
50
110
°C/W
1
12/13/04
IRFR/U5305PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55
––– –––
V
VGS = 0V, ID = -250µA
––– -0.034 ––– V/°C Reference to 25°C, I D = -1mA
–––
––– 0.065
Ω
VGS = -10V, ID = -16A „
-2.0
––– -4.0
V
VDS = VGS, ID = -250µA
8.0
––– –––
S
VDS = -25V, ID = -16A†
–––
––– -25
VDS = -55V, VGS = 0V
µA
–––
––– -250
VDS = -44V, VGS = 0V, TJ = 150°C
–––
––– 100
VGS = 20V
nA
–––
––– -100
VGS = -20V
–––
–––
63
ID = -16A
–––
–––
13
nC
VDS = -44V
–––
–––
29
VGS = -10V, See Fig. 6 and 13 „†
–––
14
–––
VDD = -28V
–––
66
–––
ID = -16A
ns
–––
39
–––
RG = 6.8Ω
–––
63
–––
RD = 1.6Ω, See Fig. 10 „†
D
Between lead,
4.5 –––
–––
6mm (0.25in.)
nH
G
from package
–––
7.5 –––
and center of die contact …
S
––– 1200 –––
VGS = 0V
–––
520 –––
pF
VDS = -25V
–––
250 –––
ƒ = 1.0MHz, See Fig. 5 †
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-31
–––
–––
-110
–––
–––
–––
–––
71
170
-1.3
110
250
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = -16A, VGS = 0V „
TJ = 25°C, IF = -16A
di/dt = -100A/µs „†
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25Ω, IAS = -16A. (See Figure 12)
ƒ ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS,
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
† Uses IRF5305 data and test conditions.
T J ≤ 175°C
2
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IRFR/U5305PbF
1000
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
100
10
-4.5V
100
20µs PULSE WIDTH
Tc
J = 25°C
A
1
0.1
1
10
10
-4.5V
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
2.0
TJ = 25°C
TJ = 175°C
10
V DS = -25V
20µs PULSE WIDTH
6
7
8
9
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
A
100
Fig 2. Typical Output Characteristics
100
5
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TCJ = 175°C
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
4
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
TOP
10
A
I D = -27A
1.5
1.0
0.5
V GS = -10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U5305PbF
C, Capacitance (pF)
2000
Ciss
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
2500
Coss
1500
1000
Crss
500
0
10
V DS = -44V
V DS = -28V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
1
I D = -16A
100
0
-VDS , Drain-to-Source Voltage (V)
30
40
50
A
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
-ID , Drain Current (A)
-ISD , Reverse Drain Current (A)
20
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
TJ = 175°C
TJ = 25°C
VGS = 0V
10
0.4
0.8
1.2
1.6
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
A
2.0
100
100µs
10
1ms
10ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
A
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U5305PbF
RD
VDS
35
VGS
30
D.U.T.
RG
-
-ID , Drain Current (A)
+
VDD
25
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
15
Fig 10a. Switching Time Test Circuit
10
td(on)
tr
t d(off)
tf
VGS
5
10%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U5305PbF
+
-
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test
Circuit
I AS
E AS , Single Pulse Avalanche Energy (mJ)
L
VDS
700
TOP
600
BOTTOM
ID
-6.6A
-11A
-16A
500
400
300
200
100
0
VDD = -25V
25
50
A
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFR/U5305PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS *
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
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7
IRFR/U5305PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
WITH ASSEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
PART NUMBER
INTERNAT IONAL
RECTIF IER
LOGO
Note: "P" in ass embly line pos ition
indicates "Lead-Free"
IRFU120
12
916A
34
ASSEMBLY
LOT CODE
DATE CODE
YEAR 9 = 1999
WE EK 16
LINE A
OR
PART NUMBER
INT ERNATIONAL
RECTIFIER
LOGO
IRFU120
12
ASSEMBLY
LOT CODE
8
34
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 16
A = ASSEMBLY S IT E CODE
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IRFR/U5305PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE : T HIS IS AN IRF U120
WIT H ASS EMB LY
LOT CODE 5678
AS SE MBLED ON WW 19, 1999
IN T HE ASS EMBLY LINE "A"
INT ERNATIONAL
RE CT IFIE R
LOGO
PART NUMBER
IRF U120
919A
56
78
ASS EMBLY
LOT CODE
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMB ER
IRF U120
56
AS SEMBLY
LOT CODE
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78
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = AS SEMBLY SIT E CODE
9
IRFR/U5305PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
10
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