IRF IRFU9214PBF

PD - 95375A
IRFR/U9214PbF
HEXFET® Power MOSFET
P-Channel
Surface Mount (IRFR9214)
l Straight Lead (IRFU9214)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
l
D
VDSS = -250V
l
RDS(on) = 3.0Ω
G
ID = -2.7A
S
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
TO-252AA
I-Pak
TO-251AA
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
V GS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-2.7
-1.7
-11
50
0.40
± 20
100
-2.7
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
260 (1.6mm from case )
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
2.5
50
110
°C/W
12/07/04
IRFR/U9214PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-250
–––
–––
-2.0
0.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
–––
–––
–––
Typ.
–––
-0.25
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
14
20
17
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
3.0
Ω
VGS = -10V, I D = -1.7A „
-4.0
V
VDS = VGS, ID = -250µA
–––
S
VDS = -50V, ID = -1.7A
-100
VDS = -250V, VGS = 0V
µA
-500
VDS = -200V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
14
ID = -1.7A
3.1
nC VDS = -200V
6.8
VGS = -10V, See Fig. 6 and 13 „
–––
VDD = -125V
–––
ID = -1.7A
ns
–––
RG =21 Ω
–––
RD =70 See Fig. 10 „
D
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact…
S
220 –––
VGS = 0V
75 –––
pF
VDS = -25V
11 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD
t rr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -2.7
showing the
A
G
integral reverse
––– ––– -11
p-n junction diode.
S
––– ––– -5.8
V
TJ = 25°C, IS = -2.7A, VGS = 0V „
––– 150 220
ns
TJ = 25°C, IF = -1.7A
––– 870 1300 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 27mH
RG = 25Ω, IAS = -2.7A. (See Figure 12)
ƒ ISD ≤ -2.7A, di/dt ≤ 600A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
…This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U9214PbF
10
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
1
-4.5V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
1
-4.5V
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 150 ° C
1
V DS = -50V
20µs PULSE WIDTH
5
6
7
8
9
10
100
Fig 2. Typical Output Characteristics
10
0.1
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 25 ° C
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
4
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
ID = -2.7A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFR/U9214PbF
= 0V,
f = 1MHz
= Cgs + Cgd , Cds SHORTED
= Cgd
= Cds + Cgd
Ciss
200
100
Coss
20
-VGS , Gate-to-Source Voltage (V)
VGS
Ciss
Crss
Coss
300
1
ID = -1.7 A
VDS =-200V
VDS =-125V
VDS =-50V
16
12
8
4
Crss
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
0
100
3
6
9
12
15
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
-IID , Drain Current (A)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
400
1
TJ = 25 ° C
0.1
1.0
V GS = 0 V
2.0
3.0
4.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
10
100us
1
0.1
5.0
1ms
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRFR/U9214PbF
VGS
2.5
D.U.T.
RG
+
VDD
2.0
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.5
Fig 10a. Switching Time Test Circuit
1.0
0.5
td(on)
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
-ID , Drain Current (A)
RD
VDS
3.0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRFR/U9214PbF
L
VDS
- V
V DD
+ DD
D.U.T
RG
A
IAS
-20V
tp
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
200
ID
-1.3A
-1.8A
BOTTOM -2.8A
TOP
160
120
80
40
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
-10V
.2µF
.3µF
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFR/U9214PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
[ISD ]
IRFR/U9214PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF R120
WIT H AS SEMBLY
LOT CODE 1234
ASS EMBLED ON WW 16, 1999
IN THE AS SEMBLY LINE "A"
PART NUMBER
INT ERNATIONAL
RECT IFIER
LOGO
Note: "P" in as s embly line position
indicates "Lead-Free"
IRFU120
916A
12
34
AS SEMBLY
LOT CODE
DATE CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INTERNAT IONAL
RECT IFIER
LOGO
IRFU120
12
ASS EMBLY
LOT CODE
34
DATE CODE
P = DESIGNAT ES LEAD-F REE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 16
A = ASS EMBLY SIT E CODE
IRFR/U9214PbF
I-Pak (TO-251AA) Package Outline
(Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF U120
WIT H ASS EMBLY
LOT CODE 5678
AS SEMBLED ON WW 19, 1999
IN T HE AS SEMBLY LINE "A"
INT ERNAT IONAL
RECT IF IER
LOGO
PART NUMBER
IRF U120
919A
56
78
AS SEMBLY
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRF U120
56
ASS EMB LY
LOT CODE
78
DAT E CODE
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = ASS EMBLY SIT E CODE
IRFR/U9214PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04