IRFR310, IRFU310, SiHFR310, SiHFU310 Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.6 Qg (Max.) (nC) 12 • Surface Mount (IRFR310/SiHFR310) Qgs (nC) 1.9 • Straight Lead (IRFU310/SiHFU310) Qgd (nC) 6.5 • Available in Tape and Reel Configuration Available RoHS* COMPLIANT • Fast Switching Single • Fully Avalanche Rated D DPAK (TO-252) • Lead (Pb)-free Available IPAK (TO-251) DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb DPAK (TO-252) IRFR310PbF SiHFR310-E3 IRFR310 SiHFR310 DPAK (TO-252) IRFR310TRLPbFa SiHFR310TL-E3a IRFR310TRLa SiHFR310TLa DPAK (TO-252) IRFR310TRPbFa SiHFR310T-E3a IRFR310TRa SiHFR310Ta DPAK (TO-252) IRFR310TRRPbFa SiHFR310TR-E3a - IPAK (TO-251) IRFU310PbF SiHFU310-E3 IRFU310 SiHFU310 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s LIMIT 400 ± 20 1.7 1.1 6.0 0.20 0.020 86 1.7 2.5 25 2.5 4.0 - 55 to + 150 260d UNIT V A W/°C mJ A mJ W V/ns °C www.kersemi.com 1 IRFR310, IRFU310, SiHFR310, SiHFU310 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA - 50 Maximum Junction-to-Ambient RthJA - 110 Maximum Junction-to-Case RthJC - 5.0 UNIT °C/W Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 400 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.47 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 400 V, VGS = 0 V - - 25 VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250 Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 1.0 Ab VGS = 10 V VDS = 50 V, ID = 1.0 Ab µA - - 3.6 Ω 0.97 - - S - 170 - - 34 - - 6.3 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c VGS = 10 V ID = 2.0 A, VDS = 320 V, see fig. 6 and 13b, c VDD = 200 V, ID = 2.0 A, RG = 24 Ω, RD = 95 Ω, see fig. 10b, c tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF - - 12 - - 1.9 - - 6.5 - 7.9 - - 9.9 - - 21 - - 11 - - 4.5 - - 7.5 - - - 1.7 - - 6.0 - - 1.6 - 240 540 ns - 0.85 1.6 µC nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton www.kersemi.com 2 MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) V IRFR310, IRFU310, SiHFR310, SiHFU310 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.kersemi.com 3 IRFR310, IRFU310, SiHFR310, SiHFU310 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.kersemi.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area IRFR310, IRFU310, SiHFR310, SiHFU310 RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - I AS V DD VDS 10 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms www.kersemi.com 5 IRFR310, IRFU310, SiHFR310, SiHFU310 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.kersemi.com 6 Fig. 13b - Gate Charge Test Circuit IRFR310, IRFU310, SiHFR310, SiHFU310 Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - + RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test Driver gate drive P.W. Period D= - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level and 3 V drive devices Fig. 14 - For N-Channel www.kersemi.com 7