Silicon PIN Photo Diode OPD0606 High Speed Sensitivity Common cathode type PIN Photo Diode 1. Structure unit : ㎛ 1.1 Chip Size : 0.68 X 0.68mm 1.2 Chip Thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Anode(Top) : 150um - Cathode(Bottom) : 680um X 680um 1.6 Active Area : 0.54mm X 0.54mm (Ta=25℃) 2. Electrical-Optical Characteristics Parameter Symbol Min Typ Open Circuit Voltage VOP 0.3 Short Circuit Current ISC 2 Spectrum Sensitivity Unit Condition 0.32 V Note(1) 2.6 uA Note(1) λ 430~1,100 nm Peak Sensing Wavelength λP 780 nm Forward Voltage VF Dark Current ID Reverse Breakdown Voltage BVR 0.5 5 Max 1.3 V IF=10mA 10 nA VR=10V V IR=10uA 30 Note(1) : Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k. 3. Maximum Ratings Parameter (Ta=25℃) Unit Symbol Rating Reverse Breakdown Voltage BVR 30 V Junction Temperature TJ 150 ℃ AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr