Silicon PIN Photo Diode OPD1616N High Speed Sensitivity High Speed Sensitivity unit : ㎛ 1. Structure 1.1 Chip Size : 1.60mm X 1.60mm 1.2 Chip Thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Cathode(Top) : 300um X 300um - Anode(Bottom) 1.6 Active Area : 1.40mm X 1.40mm (Ta=25℃) 2. Electrical-Optical Characteristics Parameter Symbol Min Typ Open Circuit Voltage VOP -0.3 Short Circuit Current ISC -16 Spectrum Sensitivity Unit Condition -0.32 V Note(1) -20 uA Note(1) λ 430~1,100 nm Peak Sensing Wavelength λP 940 nm Forward Voltage VF Dark Current ID Reverse Breakdown Voltage BVR -0.5 -5 Max -1.3 V IF=10mA -10 nA VR=10V V IR=10uA -30 Note(1) : Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k. 3. Maximum Ratings Parameter (Ta=25℃) Unit Symbol Rating Reverse Breakdown Voltage BVR -30 V Junction Temperature TJ 150 ℃ AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr