LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon Transistor L2SC5658M3T5G This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High hFE, 210 −460 (typical) • Low VCE(sat), < 0.5 V • ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V • Available in 8 mm, 7-inch/3000 Unit Tape and Reel • This is a Pb−Free Device 3 2 1 SOT-723 3 COLLECT OR 1 B ASE 2 EMIT T ER MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 5.0 Vdc IC 100 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 260 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 ~ + 150 °C Rating Collector Current − Continuous MARKING DIAGRAM XX M THERMAL CHARACTERISTICS Rating 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Version 1.0 XX = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping L2SC5658M3T5G SOT-723 3000/Tape & Reel L2SC5658M3T5G-1/4 LESHAN RADIO COMPANY, LTD. L2SC5658M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) V(BR)EBO 5.0 − − Vdc ICBO − − 0.5 mA IEBO − − 0.5 Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage (Note 2) (IC = 60 mAdc, IB = 5.0 mAdc) DC Current Gain (Note 2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz) VCE(sat) mA Vdc − − 0.4 120 − 560 fT − 180 − MHz COB − 2.0 − pF hFE − 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Version 1.0 L2SC5658M3T5G-2/4 LESHAN RADIO COMPANY, LTD. L2SC5658M3T5G TYPICAL ELECTRICAL CHARACTERISTICS 1000 160 mA TA = 25°C 50 120 mA 40 100 mA 30 80 mA 60 mA 20 TA = − 25°C 100 40 mA 10 0 IB = 20 mA 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 10 0.1 8 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain 2 900 TA = 25°C 800 COLLECTOR VOLTAGE (mV) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. IC − VCE 1.5 1 0.5 700 600 500 400 TA = 25°C VCE = 5 V 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 0.2 100 1 5 10 20 40 60 80 100 150 200 Figure 4. On Voltage 7 20 6 Cob, CAPACITANCE (pF) 18 16 14 12 10 0.5 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Cib, INPUT CAPACITANCE (pF) VCE = 10 V TA = 25°C TA = 75°C 140 mA DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 60 5 4 3 2 0 Version 1.0 1 2 3 4 1 0 10 20 30 VEB (V) VCB (V) Figure 5. Capacitance Figure 6. Capacitance 40 L2SC5658M3T5G-3/4 LESHAN RADIO COMPANY, LTD. L2SC5658M3T5G PACKAGE DIMENSIONS SOT−723 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y C PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 mm Ǔ ǒinches Version 1.0 L2SC5658M3T5G-4/4