DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4742 SINGLE SUPPLY VOLTAGE, HIGH SPEED, WIDE BAND, DUAL OPERATIONAL AMPLIFIERS The µ PC4742 is dual high speed, wide band operational amplifier designed for single supply operation from +3 V to +32 V with low supply current drain. By using high speed PNP transistors for input and output circuits, the excellent AC performance is achieved without degrading capacitive load drive capability. With no crossover distortion and wide output voltage range characteristics, the µPC4742 is optimum choice for single supply AC amplifier, and active filters. FEATURES • High slew rate: 7 V/µs TYP. (V+ = +5 V, V– = GND) • Wide gain band width product: 3.5 MHz TYP. (V+ = +5 V, V– = GND) • Wide supply voltage range: +3 V to +32 V • Wide output voltage swing • Common mode input voltage range includes V– • Internal frequency compensation • Output short circuit protection EQUIVALENT CIRCUIT (1/2 Circuit) PIN CONFIGURATION (Top View) V+ Q7 Q8 Q9 Q10 Q11 µPC4742C, 4742G2 Q12 8 V+ OUT1 1 1 Q2 II – + Q18 Q3 Q1 Q19 Q4 II1 2 + – OUT IN Q14 Q5 Q6 7 OUT2 2 Q13 IN1 3 6 II2 V– 4 5 IN2 Q20 Q15 Q16 Q17 V– ORDERING INFORMATION Part Number Package µPC4742C 8-pin plastic DIP (300 mil) µPC4742G2 8-pin plastic SOP (225 mil) The information in this document is subject to change without notice. Document No. G13958EJ1V0DS00 (1st edition) Date Published December 1998 N CP(K) Printed in Japan © 1998 µPC4742 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Symbol Ratings Unit –0.3 to +36 V Voltage between V+ and V– Note 1 V+ –V– Differential Input Voltage VID ±36 V Input VoltageNote 2 VI V– –0.3 to V– +36 V Output VoltageNote 3 VO V– –0.3 to V+ +0.3 V PT 350 mW 440 mW Indefinite sec C PackageNote 4 Power Dissipation G2 Output Short Circuit PackageNote 5 DurationNote 6 Operating Ambient Temperature TA –20 to +80 °C Storage Temperature Tstg –55 to + 125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction independent of the magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mW/°C when operating ambient temperature is higher than 55 °C. 5. Thermal derating factor is –4.4 mW/°C when operating ambient temperature is higher than 25 °C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter 2 Symbol ± MIN. TYP. MAX. Unit ±1.5 ±16 V +3 +32 V Supply Voltage (Split) V Supply Voltage (V– = GND) V+ Output Current IO ±10 mA Capacitive Load (AV = +1, Rf = 0 Ω) CL 1000 pF µPC4742 ELECTRICAL CHARACTERISTICS (TA = 25 °C, V± = ±15 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage VIO ±1.0 ±4.5 mV Input Offset Current IIO ±6 ±75 nA Input Bias CurrentNote 7 IB 140 500 nA Large Signal Voltage Gain AV RL ≥ 2 kΩ, VO = ±10 V Supply Current ICC IO = 0 A, Both Amplifiers 5.5 mA Common Mode Rejection Ratio CMR 70 86 dB Supply Voltage Rejection Ratio SVR 70 93 dB Output Voltage Swing Vom RL ≥ 10 kΩ ±13.7 +14 –14.3 V Output Voltage Swing Vom RL ≥ 2 kΩ ±13.5 25000 300000 4.3 + Common Mode lnput Voltage Range VICM Slew Rate (Rise) SR AV = 1, RL ≥ 2 kΩ 8.5 V/µs Gain Band Width Product GBW fO = 100 kHz 3.5 MHz f = 20 Hz to 20 kHz 120 dB Channel Separation V V – V –1.8 V ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = 5 V, V– = GND) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage VIO ±1.0 ±5 mV Input Offset Current IIO ±6 ±75 nA Input Bias CurrentNote 7 IB 160 500 nA Large Signal Voltage Gain AV RL ≥ 2 kΩ Supply Current ICC IO = 0 A, All Amplifiers 4.5 mA Common Mode Rejection Ratio CMR 70 80 dB Supply Voltage Rejection Ratio SVR 70 95 dB Output Voltage Swing Vom 3.7 0 4.0 0 V Common Mode lnput Voltage Range VICM Output Current (SOURCE) IO SOURCE Output Current (SINK) IO SINK Slew Rate (Rise) SR 25000 RL ≥ 2 kΩ (Connect to GND) 300000 3.3 V+–1.8 0 V + V + IN IN = +1 V, V = 0 V, V – IN – IN V =0V 10 30 mA = +1 V 10 30 mA 7 V/µs Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 3 µPC4742 TYPICAL CHARACTERISTICS (TA = 25 °C, TYP.) SUPPLY CURRENT POWER DISSIPATION 500 10 400 A µPC4742C 200 °C/W 300 227 °C/W 200 – + 6 V– 4 TA = –20 °C TA = +25 °C TA = +80 °C 20 40 60 80 0 100 ±5 ±20 40 VICM - Common Mode Input Voltage Range - V V± = ±15V 4 VIO - Input Offset Voltage - mV ±15 COMMON MODE INPUT VOLTAGE RANGE INPUT OFFSET VOLTAGE 5 3 2 1 0 –1 –2 –3 –4 –5 –50 0 50 30 VICM+ 20 10 VICM– 0 100 10 20 + TA - Operating Ambient Temperature - °C 30 40 – V - Supply Voltage - V (V = GND) INPUT BIAS CURRENT INPUT BIAS CURRENT 200 200 150 IB - Input Bias Current - nA IB - Input Bias Current - nA ±10 V± - Supply Voltage - V TA - Operating Ambient Temperature - °C 100 50 0 10 + 20 30 – V - Supply Voltage - V (V = GND) 4 ICC 2 100 0 V+ 8 ICC - Supply Current - mA PT - Total Power Dissipation - mW µ PC4742G2 40 100 V± = ±15V 0 –50 0 50 TA - Operating Ambient Temperature - °C 100 µPC4742 OUTPUT SOURCE CURRENT LIMIT OUTPUT SINK CURRENT LIMIT 10 5 V+ = 15 V V+ = 15 V V+ ∆VO - Output Voltage to V+ - V VO - Output Voltage - V + 1 V+ V+/2 IO SINK 0.1 + VO – RL V /2 4 ∆VO + – IO SOURCE 3 2 1 The dotted line shows a characteristic of RL = 1 kΩ 0.01 0.01 0.1 1.0 10 0 0.01 100 0.1 1.0 10 IO SOURCE - Output Source Current - mA IO SINK - Output Sink Current - mA OPEN LOOP FREQUENCY RESPONSE LARGE SIGNAL FREQUENCY RESPONSE 30 120 V± = ±15 V RL = 2 kΩ Vom - Output Voltage Swing - Vp-p V± = ±15 V AV - Open Loop Voltage Gain - dB 100 100 80 60 40 20 10 20 0 10 100 1k 10 k 100 k 1 M 0 100 10 M 1k 10 k 100 k 1M 10 M f - Frequency - Hz f - Frequency - Hz VOLTAGE FOLLOWER PULSE RESPONSE SLEW RATE RL = 2 kΩ V+ = +5 V V– = GND 3 10 2 SR - Slew Rate - V/µ s VIN - Input Voltage -V/VO - Output Voltage - V 12 1 0 3 2 1 SR– 8 SR+ 6 4 2 V± = ±15 V RL = 2 kΩ 0 0 1 2 t - Time - µ s 3 0 –50 0 50 100 TA - Operating Ambient Temperature - °C 5 µPC4742 PACKAGE DRAWINGS 8PIN PLASTIC DIP (300 mil) 8 5 1 4 A K I L P J C H G B M R F D N M NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel. ITEM MILLIMETERS INCHES A B 10.16 MAX. 1.27 MAX. 0.400 MAX. 0.050 MAX. C 2.54 (T.P.) 0.100 (T.P.) D 0.50±0.10 0.020 +0.004 –0.005 F 1.4 MIN. 0.055 MIN. G 3.2±0.3 0.126±0.012 H 0.51 MIN. 0.020 MIN. I J 4.31 MAX. 5.08 MAX. 0.170 MAX. 0.200 MAX. K 7.62 (T.P.) 0.300 (T.P.) L 6.4 0.252 M 0.25 +0.10 –0.05 0.010 +0.004 –0.003 N 0.25 0.01 P 0.9 MIN. 0.035 MIN. R 0~15° 0~15° P8C-100-300B,C-1 6 µPC4742 8 PIN PLASTIC SOP (225 mil) 8 5 detail of lead end P 4 1 A H F I G J S B C E D M L N K S M NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 5.2 +0.17 −0.20 B 0.78 MAX. C 1.27 (T.P.) D 0.42 +0.08 −0.07 E F 0.1±0.1 1.59±0.21 G 1.49 H 6.5±0.3 I 4.4±0.15 J 1.1±0.2 K 0.17 +0.08 −0.07 L M 0.6±0.2 0.12 N 0.10 P +7° 3° −3° S8GM-50-225B-5 7 µPC4742 RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document “Semiconductor Device Mounting Technology Manual” (C10535E). Type of Surface Mount Device µPC4742G2: 8-pin plastic SOP (225 mil) Process Conditions Symbol Infrared ray reflow Peak temperature: 230 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time. IR30-00-1 Vapor Phase Soldering Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time. VP15-00-1 Wave Soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, WS60-00-1 Pre-heating temperature: 120 °C or below (Package surface temperature). Partial heating method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (Per each side of the device). – Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the device will be damaged by heat stress. Type of Through-hole Device µPC4742C: 8-pin plastic DIP (300 mil) Process Conditions Wave soldering (only to leads) Solder temperature: 260 °C or below, Flow time: 10 seconds or less. Partial heating method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. 8 µPC4742 REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL C10535E NEC IC PACKAGE MANUAL (CD-ROM) C13388E GUIDE TO QUALITY ASSUARANCE FOR SEMICONDUCTOR DEVICES MEI-1202 SEMICONDUCTORS SELECTION GUIDE X10679E NEC SEMICONDUCTOR DEVICE RELIABILITY/QUALITY CONTROL SYSTEM IEI-1212 (STANDARD LINEAR IC) 9 µPC4742 [MEMO] 10 µPC4742 [MEMO] 11 µPC4742 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5