DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4574 QUAD ULTRA LOW-NOISE, WIDEBAND, OPERATIONAL AMPLIFIER DESCRIPTION The µPC4574 is an ultra low noise, high slew rate quad operational amplifier specifically designed for audio, instrumentation, and communication circuits. The low noise and high frequency capabilities make it ideal for preamps and active filters for instrumentation and professional audio. FEATURES • • • • Ultra low noise High slew rate Wide bandwidth Internal frequency compensation ★ ORDERING INFORMATION Part Number Package µPC4574C µPC4574C(5) µPC4574G2 µPC4574G2(5) 14-pin plastic DIP (7.62 mm (300)) 14-pin plastic DIP (7.62 mm (300)) 14-pin plastic SOP (5.72 mm (225)) 14-pin plastic SOP (5.72 mm (225)) EQUIVALENT CIRCUIT (1/4 Circuit) µ PC4574C, 4574C(5), 4574G2, 4574G2(5) + R1 Q7 Q5 OUT1 1 Q14 Q11 Q1 II Q2 Q8 Q13 Q10 IN R5 C2 R2 V Q4 C1 Q16 R7 R6 R8 Q6 Q3 II1 2 R9 Q15 4 + − V+ 4 11 V− II2 6 R10 13 II4 12 IN4 IN2 5 Q10 R4 1 − + IN1 3 OUT Q12 D R3 14 OUT4 10 IN3 − + 2 − + V PIN CONFIGURATION (Top View) 3 OUT2 7 9 II3 8 OUT3 – The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15977EJ3V0DS00 (3rd edition) (Previous No. IC-1995) Date Published February 2002 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1987 µPC4574 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter + Voltage between V and V Symbol − Note1 V −V + Differential Input Voltage Input Voltage VID Note2 Output Voltage − C Power Dissipation Package Note4 G2 Package Output Short Circuit Duration Unit −0.3 to +36 V ±30 V − + − + V −0.3 to V +0.3 VI Note3 Ratings V VO V −0.3 to V +0.3 V PT 570 mW 550 mW 10 sec Note5 Note6 Operating Ambient Temperature TA −20 to +80 °C Storage Temperature Tstg −55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –7.6 mW/°C when ambient temperature is higher than 50°C. 5. Thermal derating factor is –5.5 mW/°C when ambient temperature is higher than 25°C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. Supply Voltage V± ±4 Output Current MAX. Unit ±16 V IO ±10 mA Source Resistance RS 50 kΩ Capacitive Load (AV = +1) CL 100 pF 2 Data Sheet G15977EJ3V0DS TYP. µPC4574 µPC4574C, µPC4574G2 ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol TYP. MAX. Unit ±0.3 ±5 mV IIO ±10 ±200 nA IB 500 1000 nA 12 mA VIO Note Note Conditions MIN. RS ≤ 50 Ω Large Signal Voltage Gain AV RL ≥ 2 kΩ , VO = ±10 V Supply Current ICC IO = 0 A, All Amplifiers 30000 300000 8.5 Common Mode Rejection Ratio CMR 80 100 dB Supply Voltage Rejection Ratio SVR 80 100 dB Output Voltage Swing Vom RL ≥ 10 kΩ ±12 ±13.4 V RL ≥ 2 kΩ ±10 +12.8 −12.4 Common Mode Input Voltage Range VICM Slew Rate SR Gain Band Width Product GBW ±12 ±14 V RL ≥ 2 kΩ 4 6 V/ µs fO = 100 kHz 10 14 MHz Unity Gain Frequency funity open loop 7 MHz Phase Margin φunity open loop 50 degree Total Harmonic Distortion THD VO = 3 Vr.m.s., f = 20 Hz to 20 kHz (Fig.1) 0.002 % RIAA (Fig.2) 1.2 µVr.m.s. FLAT+JIS A, RS = 100 Ω (Fig.3) 0.53 fO = 10 Hz, RS = 100 Ω 5.5 fO = 1 kHz, RS = 100 Ω 5.0 fO = 1 kHz 0.7 pA/ Hz f = 20 Hz to 20 kHz 120 dB Input Equivalent Noise Voltage Input Equivalent Noise Voltage Density Input Equivalent Noise Current Density Channel Separation Vn en in 0.65 nV/ Hz Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. Data Sheet G15977EJ3V0DS 3 µPC4574 ★ µPC4574C(5), µPC4574G2(5) ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15V) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol TYP. MAX. Unit ±0.3 ±1 mV IIO ±10 ±60 nA IB 500 650 nA 11 mA VIO Note Note Conditions MIN. RS ≤ 50 Ω Large Signal Voltage Gain AV RL ≥ 2 kΩ , VO = ±10 V Supply Current ICC IO = 0 A, All Amplifiers 50000 300000 8.5 Common Mode Rejection Ratio CMR 85 100 dB Supply Voltage Rejection Ratio SVR 85 100 dB Output Voltage Swing Vom RL ≥ 10 kΩ ±13 ±13.4 V RL ≥ 2 kΩ ±11.5 +12.8 −12.4 Common Mode Input Voltage Range VICM Slew Rate SR Gain Band Width Product GBW ±13 ±14 V RL ≥ 2 kΩ 4 6 V/ µs fO = 100 kHz 10 14 MHz Unity Gain Frequency funity open loop 7 MHz Phase Margin φunity open loop 50 degree Total Harmonic Distortion THD VO = 3 Vr.m.s., f = 20 Hz to 20 kHz (Fig.1) 0.002 % RIAA (Fig.2) 1.2 µVr.m.s. FLAT+JIS A, RS = 100 Ω (Fig.3) 0.53 fO = 10 Hz, RS = 100 Ω 5.5 fO = 1 kHz, RS = 100 Ω 5.0 fO = 1 kHz 0.7 pA/ Hz f = 20 Hz to 20 kHz 120 dB Input Equivalent Noise Voltage Input Equivalent Noise Voltage Density Input Equivalent Noise Current Density Channel Separation Vn en in 0.65 Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 4 Data Sheet G15977EJ3V0DS nV/ Hz µPC4574 MEASUREMENT CIRCUIT Fig.1 Total Harmonic Distortion Measurement Circuit − VO = 3 Vr.m.s. + 2 kΩ Fig.2 Noise Measurement Circuit (RIAA) 2400 pF 8200 pF 610 Ω 47 µ F + 2.2 kΩ 33 µ F 56 kΩ + − 30 kΩ 330 kΩ 1.5 µ F + + 40 dB Amp. LPF (fO = 30 kHz) VO = (36.5 dB+40 dB) x Vn 100 kΩ Vn = VO 76.5 dB Fig.3 Flat Noise Measurement Circuit (FLAT+JIS A) 10 kΩ − JIS A + 100 Ω RS = 100 Ω Data Sheet G15977EJ3V0DS VO = 40 dB x Vn Vn = VO 40 dB 5 µPC4574 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.) POWER DISSIPATION OPEN LOOP FREQUENCY RESPONSE 800 600 AV - Open Loop Voltage Gain - dB PT - Total Power Dissipation - mW 120 µ PC4574C 132˚C/W µ PC4574G2 400 182˚C/W 200 V± = ±15 V 100 80 60 40 20 0 0 20 40 60 80 1 100 10 100 TA - Operating Ambient Temperature - ˚C LARGE SIGNAL FREQUENCY RESPONSE 1M 10 M OUTPUT CURRENT LIMIT V ± = ±15 V RL = 10 kΩ V ± = ±15 V VO ± - Output Voltage - V Vom - Output Voltage Swing - Vp-p 10 k 100 k ±15 30 20 10 0 100 1k f - Frequency - Hz 1k 10 k 100 k 1M ±10 V − ,IO SINK ±5 0 10 M f - Frequency - Hz V ± ,IO SOURCE 20 40 60 80 IO - Output Current - mA SUPPLY CURRENT SUPPLY CURRENT 12 12 ICC - Supply Current - mA ICC - Supply Current - mA V ± = ±15 V 9 6 3 0 −20 0 20 40 60 80 9 6 3 0 6 ±10 V ± - Supply Voltage - V TA - Operating Ambient Temperature - ˚C Data Sheet G15977EJ3V0DS ±20 µPC4574 20 10 10 0 −10 −20 ±10 0 ±20 5 0 −5 −10 0 2 4 6 8 t - Time - µ s INPUT NOISE VOLTAGE (FLAT + JIS A) INPUT EQUIVALENT NOISE VOLTAGE DENSITY 8 en - Input Equivalent Noise Voltage Density - nV/ Hz V ± = ±15 V 10 1 0.1 10 V ± = ±15 V AV = 1 RL = 2 kΩ V ± - Supply Voltage - V 100 Vn - Input Noise Voltage - µVr.m.s. VOLTAGE FOLLOWER PULSE RESPONSE VO - Output Voltage - V VICM - Common Mode Input Voltage Range - V COMMON MODE INPUT VOLTAGE RANGE 100 1k 10 k 100 k V ± = ±15 V RS = 100 V 6 4 2 0 10 RS - Source Resistance - Ω 100 1k 10 k 100 k f - Frequency - Hz TOTAL HARMONIC DISTORTION THD - Total Harmonic Distortion - % 1 V ± = ±15 V VO = 3 Vr.m.s. AV = 1 RL = 2 kΩ 0.1 0.01 0.001 0.0001 10 100 1k 10 k 100 k f - Frequency - Hz Data Sheet G15977EJ3V0DS 7 µPC4574 ★ PACKAGE DRAWINGS (Unit: mm) 14-PIN PLASTIC DIP (7.62 mm (300)) 14 8 1 7 A K J L I C H G B M R F D N M NOTES ITEM 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. 2. ltem "K" to center of leads when formed parallel. A MILLIMETERS 19.22±0.2 B 2.14 MAX. C 2.54 (T.P.) D F G 0.50±0.10 1.32±0.12 H 0.51 MIN. 3.6±0.3 I 3.55 J K 4.3±0.2 7.62 (T.P.) L 6.4±0.2 M 0.25 +0.10 −0.05 N R 0.25 0~15° P14C-100-300B1-3 8 Data Sheet G15977EJ3V0DS µPC4574 14-PIN PLASTIC SOP (5.72 mm (225)) 14 8 detail of lead end P 1 7 A H F J I G S C D B L N S K M M E NOTE Each lead centerline is located within 0.1 mm of its true position (T.P.) at maximum material condition. ITEM A MILLIMETERS 10.2±0.26 B 1.42 MAX. C 1.27 (T.P.) D 0.42 +0.08 −0.07 E 0.1±0.1 F 1.59+0.21 −0.2 G 1.49 H 6.5±0.2 I 4.4±0.1 J 1.1±0.16 K 0.17 +0.08 −0.07 L 0.6±0.2 M 0.1 N 0.10 P 3° +7° −3° S14GM-50-225B, C-6 Data Sheet G15977EJ3V0DS 9 µPC4574 ★ RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to below our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL"(C10535E). Type of Surface Mount Device µPC4574G2, 4574G2(5): 14-pin plastic SOP (5.72 mm (225)) Process Infrared Ray Reflow Conditions Symbol Peak temperature: 230°C or below (Package surface temperature), IR30-00-1 Reflow time: 30 seconds or less (at 210°C or higher), Maximum number of reflow processes: 1 time. Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature), VP15-00-1 Reflow time: 40 seconds or less (at 200°C or higher), Maximum number of reflow processes: 1 time. Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). Partial Heating Method Pin temperature: 300°C or below, – Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device µPC4574C, 4574C(5): 14-pin plastic DIP (7.62 mm (300)) Process Conditions Wave Soldering Solder temperature: 260°C or below, (only to leads) Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300°C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. 10 Data Sheet G15977EJ3V0DS µPC4574 [MEMO] Data Sheet G15977EJ3V0DS 11 µPC4574 • The information in this document is current as of February, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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