DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4094 J-FET INPUT LOW-OFFSET DUAL OPERATIONAL AMPLIFIER Dual operational amplifier µPC4094 is a high-speed version of the µPC4092. NEC's unique high-speed PNP transistor (fT = 300 MHz) in the output stage realizes a high slew rate of 25 V/µs under voltage-follower conditions without an oscillation problem. Zener-zap resistor trimming in the input stage produces excellent offset voltage and temperature drift characteristics. With AC performance characteristics that are two times better than conventional bi-FET operation amplifiers, the µPC4094 is ideal for fast integrators, active filters, and other high-speed circuit applications. FEATURES • Stable operation with 220 pF capacitive load • Low noise : en = 19 nV/ √Hz (TYP.) • Low input offset voltage and offset voltage • Output short circuit protection ±3 mV (MAX.) • High input impedance ... J-FET Input Stage ±7 µV/°C (TYP.) temperature drift • Internal frequency compensation • High slew rate: 25 V/µs (TYP.) • Very low input bias and offset currents ORDERING INFORMATION Part Number Package µPC4094C 8-pin plastic DIP (300 mil) µPC4094G2 8-pin plastic SOP (225 mil) EQUIVALENT CIRCUIT (1/2 Circuit) PIN CONFIGURATION (Top View) V + µ PC4094C, 4094G2 Q9 OUT1 1 Q6 II Q1 Q2 Q7 C1 IN Q5 Q3 D1 OUT HIGH SPEED Q10 PNP + 8 V 7 OUT2 1 − + II1 2 2 + − IN1 3 6 II2 V− 4 5 IN2 Q4 Q8 TRIMMED V − The information in this document is subject to change without notice. Document No. G13907EJ1V0DS00 (1st edition) Date Published December 1998 N CP(K) Printed in Japan © 1998 µPC4094 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter + Voltage between V and V –Note 1 Symbol Ratings Unit – –0.3 to +36 V ±30 V + V –V Differential Input Voltage VID Note 2 Input Voltage Output Voltage C Power Dissipation Note 4 Package + – + V –0.3 to V +0.3 VI Note 3 – V VO V –0.3 to V +0.3 V PT 350 mW 440 mW Indefinite sec Note 5 G2 Package Note 6 Output Short Circuit Duration Operating Ambient Temperature TA –20 to +80 °C Storage Temperature Tstg –55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mV/°C when operating ambient temperature is higher than 55 °C. 5. Thermal derating factor is –4.4 mV/°C when operating ambient temperature is higher than 25 °C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit ±16 V Supply Voltage V± Output Current IO ±10 mA Capacitive Load (AV = +1, Rf = 0 Ω) CL 220 pF 2 ±5 µPC4094 ELECTRICAL CHARACTERISTICS (TA = 25 °C, V± = ±15 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current Note 7 Note 7 Symbol TYP. MAX. Unit ±1 ±3 mV IIO ±25 ±100 pA IB 50 200 pA 6.8 mA VIO Conditions MIN. RS ≤ 50 Ω Large Signal Voltage Gain AV RL ≥ 2 kΩ , VO = ±10 V Supply Current ICC IO = 0 A, both amplifier Common Mode Rejection Ratio CMR 70 100 dB Supply Voltage Rejection Ratio SVR 70 100 dB Output Voltage Swing Vom ±12 +14.0 V RL ≥ 10 kΩ 25000 200000 5 –13.3 RL ≥ 2 kΩ ±10 +13.5 V –12.8 Common Model Input Voltage Range ±11 VICM +14 V –12 Slew Rate SR Unity Gain Frequency funity Input Equivalent Noise Voltage Density en AV = 1 RS = 100 Ω, f = 1 kHz Channel Separation 15 V/µs 4 MHz 19 nV/√Hz 120 dB Input Offset Voltage VIO RS ≤ 50 Ω, TA = –20 to +70 °C Average VIO Temperature Drift ∆VIO/∆T TA = –20 to +70 °C IIO TA = –20 to +70 °C ±2 nA IB TA = –20 to +70 °C 7 nA Input Offset Current Input Bias Current Note 7 Note 7 ±5 mV µV/°C ±7 Notes 7. Input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain the junction temperature close to the operating ambient temperature. 3 µPC4094 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C, TYP.) POWER DISSIPATION OPEN LOOP FREQUENCY RESPONSE 120 500 400 AV - Open Loop Voltage Gain - dB PT - Total Power Dissipation - mW 600 µ PC4094G2 200 °C/W µ PC4094C 300 227 °C/W 200 100 20 0 40 60 80 V± = ±15 V RL = 2 kΩ 100 80 60 40 20 0 100 1 TA - Operating Ambient Temperature - °C 10 100 INPUT OFFSET VOLTAGE 5 1k 10 k 100 k 1 M INPUT BIAS CURRENT 100 V± = ±15 V V± = ±15 V IB - Input Bias Current - nA 4 VIO - Input Offset Voltage - mV 10 M f - Frequency - Hz 3 2 1 0 −1 −2 10 1.0 0.1 −3 −4 −5 −40 0.01 −20 −20 0 20 40 60 0 20 40 60 80 TA - Operating Ambient Temperature - °C 80 TA - Operating Ambient Temperature - °C LARGE SIGNAL FREQUENCY RESPONSE OUTPUT VOLTAGE SWING 40 RL = 10 kΩ V± = ±15 V 20 V± = ±10 V 10 V± = ±5 V 0 100 1k 10 k 100 k f - Frequency - Hz 4 RL = 10 kΩ Vom - Output Voltage Swing - Vp-p Vom - Output Voltage Swing - Vp-p 30 1M 10 M 30 20 10 ±10 0 V± - Supply Voltage - V ±20 µPC4094 OUTPUT SOURCE CURRENT LIMIT OUTPUT SINK CURRENT LIMIT −15 V± = ±15 V +10 VO− - Output Voltage - V VO+ - Output Voltage - V +15 TA = 70 °C 25 °C −20 °C +5 0 10 20 −10 −20 °C −5 10 20 SUPPLY CURRENT INPUT EQUIVALENT NOISE VOLTAGE DENSITY 7.0 en - Input Equivalent Noise Voltage Density - nV/ Hz 50 6.0 5.0 4.0 3.0 2.0 1.0 ±5 0 ±10 30 IO SINK - Output Sink Current - mA IO SOURCE - Output Source Current - mA ICC - Supply Current - mA TA = 70 °C 25 °C 0 30 V± = ±15 V ±15 ±20 ± V - Supply Voltage - V V± = ±15 V RS = 100 Ω 40 30 20 10 0 10 100 1k 10k 100k f - Frequency - Hz VI - Input Voltage - V VO - Output Voltage - V VOLTAGE FOLLOWER PULSE RESPONSE AV = +1 RL = 10 kΩ CL = 100 pF V± = ±15 V 5 0 −5 5 0 −5 0 0.5 1 1.5 2 5 µPC4094 PACKAGE DRAWINGS 8PIN PLASTIC DIP (300 mil) 8 5 1 4 A K I L P J C H G B M R F D N M NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel. ITEM MILLIMETERS INCHES A B 10.16 MAX. 1.27 MAX. 0.400 MAX. 0.050 MAX. C 2.54 (T.P.) 0.100 (T.P.) D 0.50±0.10 0.020 +0.004 –0.005 F 1.4 MIN. 0.055 MIN. G 3.2±0.3 0.126±0.012 H 0.51 MIN. 0.020 MIN. I J 4.31 MAX. 5.08 MAX. 0.170 MAX. 0.200 MAX. K 7.62 (T.P.) 0.300 (T.P.) L 6.4 0.252 M 0.25 +0.10 –0.05 0.010 +0.004 –0.003 N 0.25 0.01 P 0.9 MIN. 0.035 MIN. R 0~15° 0~15° P8C-100-300B,C-1 6 µPC4094 8 PIN PLASTIC SOP (225 mil) 8 5 detail of lead end P 4 1 A H F I G J S B C E D M L N K S M NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 5.2 +0.17 −0.20 B 0.78 MAX. C 1.27 (T.P.) D 0.42 +0.08 −0.07 E F 0.1±0.1 1.59±0.21 G 1.49 H 6.5±0.3 I 4.4±0.15 J 1.1±0.2 K 0.17 +0.08 −0.07 L M 0.6±0.2 0.12 N 0.10 P +7° 3° −3° S8GM-50-225B-5 7 µPC4094 RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL"(C10535E). Type of Surface Mount Device µPC4094G2: 8-pin plastic SOP (225 mil) Process Infrared Ray Reflow Conditions Symbol Peak temperature: 230 °C or below (Package surface temperature), IR30-00-1 Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time. Vapor Phase Soldering Peak temperature: 215 °C or below (Package surface temperature), VP15-00-1 Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time. Wave Soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). Partial Heating Method Pin temperature: 300 °C or below, – Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device µPC4094C: 8-pin plastic DIP (300 mil) Process Conditions Wave Soldering Solder temperature: 260 °C or below, (only to leads) Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. 8 µPC4094 REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL C10535E NEC IC PACKAGE MANUAL (CD-ROM) C13388E GUIDE TO QUALITY ASSURANCE FOR SEMICONDUCTOR DEVICES MEI-1202 SEMICONDUCTORS SELECTION GUIDE X10679E NEC SEMICONDUCTOR DEVICE RELIABILITY/QUALITY CONTROL SYSTEM IEI-1212 (STANDARD LINEAR IC) 9 µPC4094 [MEMO] 10 µPC4094 [MEMO] 11 µPC4094 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5