RUS1H20R Power Schottky Barrier Diode MOSFET Features Pin Description • VRRM= 100V IF(AV)=2x 10A • Low Power Loss and High Efficiency • High Surge Capability • Low Leakage Current • Low Forward Voltage Drop • Lead Free and Green Devices Available TO-220 Applications • Rectifiers in SMPS • Free Wheeling Diode • DC-DC Converters Schottky Barrier Diode Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) Maximum Repetitive Reverse Voltage 100 Maximum DC Reverse Voltage 100 IF(AV) Average Rectified Forward Current, per Device TC=130°C per Diode 20 A 10 A IFSM Peak Forward Surge Current,8.3mS Half Sine Wave 150 A TSTG Storage Temperature Range -55 to 150 °C 150 °C 1.5 °C/W VRRM VR TJ Operating Junction Temperature V Mounted on Large Heat Sink RθJC Thermal Resistance-Junction to Case per Diode Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2012 www.ruichips.com RUS1H20R Electrical Characteristics Symbol (TC=25°C Unless Otherwise Noted) Parameter Test Condition RUS1H20R Min. Typ. Max. Unit Static Characteristics IR ① VF ① Notes: Reverse Leakage Current Zero Gate Voltage Drain Current VR=100V, TC=25°C 100 µA VR=100V, TC=125°C 5 mA IF=5A, TC=25°C 0.65 - V IF=5A, TC=125°C 0.60 - V IF=10A, TC=25°C 0.75 0.8 V IF=10A, TC=125°C 0.66 0.7 V Pulse test ; Pulse width≤300µs, duty cycle≤2%. Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RUS1H20R RUS1H20R TO-220 Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2012 2 www.ruichips.com RUS1H20R Typical Characteristics Junction Capacitance CJ - Junction Capacitance (pF) IFAV – Average Forward Current (A) Power Derating TC - Case Temperature (°C) VR – Reverse Voltage (V) Reverse Current IF - Forward Current (A) IR – Reverse Current (µA) Forward Voltage VF - Forward Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2012 VR - Reverse Voltage 3 www.ruichips.com RUS1H20R Package Information TO220(AB) Package Outline SYMBOL MM INCH SYMBOL MM MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 A1 1.22 1.27 1.32 0.048 0.050 A2 2.59 2.69 2.79 0.102 0.106 b 0.77 0.81 0.90 0.030 0.032 0.035 L2 b2 1.23 1.27 1.36 0.048 0.050 0.054 Øp 3.76 INCH MIN NOM MAX MIN NOM MAX H1 6.10 6.30 6.50 0.240 0.248 0.256 0.052 L 13.20 13.40 13.50 0.520 0.528 0.531 0.110 L1 - - 4.35 - - 0.171 3.84 3.88 0.148 0.151 0.153 2.50REF 0.098REF c 0.34 0.38 0.47 0.013 0.015 0.019 Q 2.60 2.74 2.90 0.102 0.108 0.114 D 14.70 15.00 15.30 0.579 0.591 0.602 θ1 5° 7° 9° 5° 7° 9° D1 8.60 8.70 8.80 0.339 0.343 0.346 θ2 1° 3° 5° 1° 3° 5° E 10.06 10.16 10.26 0.396 0.400 0.404 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Øp1 1.40 1.50 1.60 0.055 0.059 0.063 e 2.54BSC 0.1BSC e1 5.08BSC 0.2BSC Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2012 4 www.ruichips.com RUS1H20R Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2012 5 www.ruichips.com