2SD2083 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383) IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max V Tj 150 °C fT VCE=12V, IE=–1A 20typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 340typ pF 5.45±0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 24 2 12 10 –5 24 –24 1.0typ 6.0typ 1.0typ 10 0 0 1 2 3 4 5 0 0.5 6 1 5 Collector-Emitter Voltage V C E (V) 10 50 100 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 20000 10000 DC Curr ent Gain h F E Typ 5000 1000 500 0.5 1 5 10 125 ˚C 5000 25 Transient Thermal Resistance 20000 100 0.2 ˚C ˚C –30 1000 500 100 0.02 40 0.5 p) 1 10 5 f T – I E Characteristics (Typical) mp) 1 2 2.2 40 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) ) em 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 100 100 1m s –10 0.2 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 nk Emitter Current I E (A) –5 si –1 at –0.5 he 0 –0.1 ite 0.5 fin Without Heatsink Natural Cooling 1 In 5 ith m Collector Cur rent I C (A) s 10 50 DC 10 100 W Ma xim um Powe r Dissipat io n P C (W) 50 Typ Cut -off Fre quency f T (M H Z ) DC Curr ent Gain h F E 0 500 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 10 e Te I B =1.5m A 12A 6A 1 eT 3m A 20 I C =25A 2 as 5mA 20 (C 8mA 5˚C 30 (V C E =4V) 25 12 Collector Current I C (A) 12mA 3 Collector Current I C (A) A 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a (˚C/W) 20m C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) A 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) m 30 2 3 1.05 +0.2 -0.1 VCC (V) 40 ø3.2±0.1 V ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 b IB Tstg a 4.8±0.2 Cas IC 19.9±0.3 VEBO 1.8 V 15.6±0.4 9.6 5.0±0.2 µA 2.0 10max ˚C ( 120 VCB=120V emp VCEO Unit ICBO –30 V Ratings se T 120 External Dimensions MT-100(TO3P) (Ta=25°C) Conditions (Ca VCBO ■Electrical Characteristics Symbol (2kΩ) (100Ω) E 25˚C Unit 4.0 Ratings B 4.0max ■Absolute maximum ratings (Ta=25°C) C Application : Driver for Solenoid, Motor and General Purpose 20.0min Darlington Symbol Equivalent circuit 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 147