2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 60typ pF Tstg V ø3.3±0.2 a b 3.9 IC=25mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 12 6 2 10 –5 200 –200 0.2typ 1typ 0.3typ 10mA 1 5mA 0 0 1 2 3 4 5 0.5 3A 0 0.005 0.01 0.05 0.1 0.5 (V C E =4V) 100 50 1 Transient Thermal Resistance DC Curr ent Gain h FE Typ 125˚C 25˚ C 100 – 3 0 ˚C 50 20 0.01 4 0.05 0.1 f T – I E Characteristics (Typical) 0.5 1 4 p) 10 100 0m m s s ite he at si nk –4 fin Without Heatsink Natural Cooling In 0.5 20 ith DC 1 W –0.5 –1 1000 s Ma xim um Powe r Dissipat io n P C (W) 10 10 10 Without Heatsink 0.05 0 –0.1 1 P c – T a Derating 0.1 Emitter Current I E (A) 1 30 5 –0.005 5 0.5 10 30 10 1.2 Time t(ms) 1m Typ 1.0 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) 20 0.5 Collector Current I C (A) Collector Current I C (A) Collector Cur rent I C (A) DC Curr ent Gain h FE 500 40 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 500 Cu t-off Fr eque ncy f T ( MH Z ) 0 1 Base Current I B (A) (V C E =4V) 0.5 Tem 1 I C =1 A 6 h FE – I C Characteristics (Typical) 0.1 2 2A Collector-Emitter Voltage V C E (V) 20 0.01 3 se 20mA 2 1.0 (Ca 30mA ˚C Collector Current I C (A) 40mA 3 125 IB =7 50mA (V CE =4V) 4 θ j - a (˚C/W) 0m A 60 m A I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 4 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 mp) 4 e Te IC V µA 100max VEB=6V (Cas IEBO –30˚C V ) 6 emp VEBO 100 0.8±0.2 80 VCB= 4.0±0.2 µA 100max ICBO se T V 4.2±0.2 2.8 c0.5 (Ca V 80 10.1±0.2 25˚C 100 60 Unit 8.4±0.2 80 VCEO Conditions 16.9±0.3 VCBO Symbol 13.0min Unit External Dimensions FM20(TO220F) (Ta=25°C) Ratings 2SC3851 2SC3851A ±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3851 2SC3851A Application : Audio and PPC High Voltage Power Supply, and General Purpose 3 5 10 50 Collector-Emitter Voltage V C E (V) 80 0 0 50 100 150 Ambient Temperature Ta(˚C) 77