SANKEN 2SD1769

2SD1769
Silicon NPN Triple Diffused Planar Transistor
Unit
Conditions
120
V
ICBO
VCB=120V
10max
µA
VCEO
120
V
IEBO
VEB=6V
20max
mA
6
V
V(BR)CEO
6(Pulse10)
A
hFE
IC=10mA
120min
VCE=2V, IC=3A
2000min
10.2±0.2
V
IB
1
A
VCE(sat)
IC=3A, IB=3mA
1.5max
PC
50(Tc=25°C)
W
VBE(sat)
IC=3A, IB=3mA
2.0max
Tj
150
°C
fT
VCE=12V, IE=–0.2A
100typ
–55 to +150
°C
COB
VCB=10V, f=1MHz
typ
V
0.65 +0.2
-0.1
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
30
10
3
10
–1.5
3
–3
0.5typ
5.5typ
1.5typ
I B =0.3mA
0
0
2
4
0
6
0.3
1
Collector-Emi tter Voltage V C E (V)
5
10
50
10000
5000
D C Cur r ent Gai n h FE
DC Curr ent Gain h F E
(V C E =2V)
Typ
1000
500
0.5
1
5
1000
5˚C
˚C
25
500
–3
12
0˚
C
100
50
30
0.03 0.05 0.1
10
Collector Current I C (A)
0.5
1
5
10
10
p)
)
Temp
2
1
5
0.5
0.2
1
5
10
50 100
1000
5000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
mp)
Tem
1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
10000
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =2V)
80
0.03
0
100
Base Current I B (mA)
h FE – I C Characteristics (Typical)
5000
2
(Case
4A
2A
1
4
–30˚C
2
I C =6 A
se
0 .4 m A
e Te
4
(Cas
A
A
0 .5 m
6
(Ca
0 .7 m
2
˚C
A
1mA
125
1 .5 m
6
8
Collector Current I C (A)
3
(V CE =2V)
3
θ j - a (˚C /W)
5m
I C – V BE Temperature Characteristics (Typical)
Transient Thermal Resistance
m
2mA
mA
1.4
Weight : Approx 2.6g
a. Type No.
b. Lot No.
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
m
20
Collector Current I C (A)
10
A
2.5
B C E
RL
(Ω)
A
1.35
2.5
VCC
(V)
8
b
pF
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
2.0±0.1
ø3.75±0.2
a
V
MHz
4.8±0.2
25˚C
Tstg
Unit
3.0±0.2
2SD1769
VCBO
IC
(2.5kΩ)(200Ω) E
External Dimensions MT-25(TO220)
(Ta=25°C)
16.0±0.7
Symbol
8.8±0.2
■Electrical Characteristics
2SD1769
VEBO
B
4.0max
■Absolute maximum ratings (Ta=25°C)
C
Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
12.0min
Darlington
Symbol
Equivalent
circuit
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
20
120
50
Collector Curre nt I C ( A)
Ma xim um Powe r Dissipation P C (W)
100
Collector-Emitter Voltage V C E (V)
200
nk
10
si
5
at
0.08
3
he
136
–8
30
ite
Emitter Current I E (A)
–5
fin
–1
Without Heatsink
Natural Cooling
In
–0.5
0.5
ith
–0.05
1
40
W
0
µs
50
C
500
D
5
s
1m
s
3m
ms
10
Cu t-of f Fr eque ncy f T (MH Z )
10
Typ
100
50
20
10
2
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150