SECOS MMBT2907FW

MMBT2907FW
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
A
FEATURES
3

Epitaxial Planar Die Construction
Complementary NPN Type Available(MMBT2222FW)

Ideal for Medium Power Amplification and Switching

C B
Top View
1
1
Collector
K
2
E
2

D
MARKING CODE

L
3

MMBT2907FW = 2F
F
G
H
J
Base
REF.
A
B
C
D
E
F

Emitter
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER
Millimeter
Min.
Max.
1.50
1.70
1.45
1.75
0.75
0.85
0.70
0.90
0.90
1.10
0.25
0.33
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.00
0.15
0.28
0.40
0.10
0.20
0.75
0.85
SYMBOL
RATINGS
UNIT
Collector - Emitter Voltage
VCEO
-60
Vdc
Collector - Base Voltage
VCBO
-60
Vdc
Emitter - Base Voltage
VEBO
-5.0
Vdc
IC
-600
mAdc
PD
150
mW
RθJA
833
℃/W
TJ, TSTG
-55 ~ +150
℃
Collector Current - Continuous
Total Device Dissapation FR-5 Board
(1)
TA=25℃
Thermal Resistance, Junction to Ambient
Junction & Storage Temperature
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
OFF CHARACTERISTICS
(2)
IC = -10mAdc, IB = 0
V(BR)CEO
-60
-
Vdc
Collector-Base Breakdown Voltage
IC = -10 µAdc, IE = 0
V(BR)CBO
-60
-
Vdc
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
IE = -10 µAdc, IC = 0
VCB =-50 Vdc, IE = 0
VEB = -4 Vdc, IC = 0
ON CHARACTERISTICS
IC =-0.1mAdc, VCE = -10 Vdc
IC =-1.0mAdc, VCE = -10 Vdc
IC =-10mAdc, VCE = -10 Vdc
IC =-150mAdc, VCE = -10 Vdc
IC =-500mAdc, VCE = -10 Vdc
IC =-150mAdc, IB = -15 mAdc
IC =-500mAdc, IB = -50 mAdc
IC =-150mAdc, IB = -15 mAdc
IC =-500mAdc, IB = -50 mAdc
SMALL SIGNAL CHARACTERISTICS
VCE = -12Vdc, IC=-2.0mAdc,f=30MHz
VCB = -12 Vdc, IE = 0, f=1MHz
SWITCHING CHARACTERISTICS
V(BR)EBO
ICBO
IEBO
-5
-
-10
-10
Vdc
nAdc
nAdc
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Curren-Gain-Bandwidth Product
Output capacitance
Turn-On Time
Delay Time
TEST CONDITIONS
VCC = -30 Vdc, IC = -150 mAdc,
IB1 = -15 mAdc
Rise Time
Turn-Out Time
VCC =-60 Vdc, IC = -150mAdc,
Storage Time
IB1= IB2 =-15 mAdc
Fall Time
Note:1.FR-5=1.0x0.75x0.062 in
2.Pulse Test: Pulse Width=300μ S, Duty Cycle≦ 2.0%
http://www.SeCoSGmbH.com/
20-Oct-2009 Rev. B
hFE
75
100
100
100
50
-
300
-0.4
-1.6
-1.3
-2.6
Vdc
Vdc
Vdc
Vdc
5.0
MHz
pF
Ton
Td
45
10
nS
nS
Tr
ToFF
TS
TF
40
100
80
30
nS
nS
nS
nS
VCE(sat)
VBE(sat)
FT
CoBO
140
Any changes of specification will not be informed individually.
Page 1 of 3
MMBT2907FW
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
20-Oct-2009 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3
MMBT2907FW
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
20-Oct-2009 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 3