MMBT2907FW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 A FEATURES 3 Epitaxial Planar Die Construction Complementary NPN Type Available(MMBT2222FW) Ideal for Medium Power Amplification and Switching C B Top View 1 1 Collector K 2 E 2 D MARKING CODE L 3 MMBT2907FW = 2F F G H J Base REF. A B C D E F Emitter MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Millimeter Min. Max. 1.50 1.70 1.45 1.75 0.75 0.85 0.70 0.90 0.90 1.10 0.25 0.33 REF. G H J K L Millimeter Min. Max. 0.00 0.15 0.28 0.40 0.10 0.20 0.75 0.85 SYMBOL RATINGS UNIT Collector - Emitter Voltage VCEO -60 Vdc Collector - Base Voltage VCBO -60 Vdc Emitter - Base Voltage VEBO -5.0 Vdc IC -600 mAdc PD 150 mW RθJA 833 ℃/W TJ, TSTG -55 ~ +150 ℃ Collector Current - Continuous Total Device Dissapation FR-5 Board (1) TA=25℃ Thermal Resistance, Junction to Ambient Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. MAX. UNIT Collector-Emitter Breakdown Voltage OFF CHARACTERISTICS (2) IC = -10mAdc, IB = 0 V(BR)CEO -60 - Vdc Collector-Base Breakdown Voltage IC = -10 µAdc, IE = 0 V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current IE = -10 µAdc, IC = 0 VCB =-50 Vdc, IE = 0 VEB = -4 Vdc, IC = 0 ON CHARACTERISTICS IC =-0.1mAdc, VCE = -10 Vdc IC =-1.0mAdc, VCE = -10 Vdc IC =-10mAdc, VCE = -10 Vdc IC =-150mAdc, VCE = -10 Vdc IC =-500mAdc, VCE = -10 Vdc IC =-150mAdc, IB = -15 mAdc IC =-500mAdc, IB = -50 mAdc IC =-150mAdc, IB = -15 mAdc IC =-500mAdc, IB = -50 mAdc SMALL SIGNAL CHARACTERISTICS VCE = -12Vdc, IC=-2.0mAdc,f=30MHz VCB = -12 Vdc, IE = 0, f=1MHz SWITCHING CHARACTERISTICS V(BR)EBO ICBO IEBO -5 - -10 -10 Vdc nAdc nAdc DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Curren-Gain-Bandwidth Product Output capacitance Turn-On Time Delay Time TEST CONDITIONS VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc Rise Time Turn-Out Time VCC =-60 Vdc, IC = -150mAdc, Storage Time IB1= IB2 =-15 mAdc Fall Time Note:1.FR-5=1.0x0.75x0.062 in 2.Pulse Test: Pulse Width=300μ S, Duty Cycle≦ 2.0% http://www.SeCoSGmbH.com/ 20-Oct-2009 Rev. B hFE 75 100 100 100 50 - 300 -0.4 -1.6 -1.3 -2.6 Vdc Vdc Vdc Vdc 5.0 MHz pF Ton Td 45 10 nS nS Tr ToFF TS TF 40 100 80 30 nS nS nS nS VCE(sat) VBE(sat) FT CoBO 140 Any changes of specification will not be informed individually. Page 1 of 3 MMBT2907FW Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 20-Oct-2009 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 MMBT2907FW Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 20-Oct-2009 Rev. B Any changes of specification will not be informed individually. Page 3 of 3