MMBT2907A PNP Silicon Elektronische Bauelemente RoHS Compliant Product FEATURES · · · General Purpose Transistor A suffix of "-C" specifies halogen & lead-free Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) A COLLECTOR Ideal for Medium Power Amplification and Switching L 3 3 3 Top View 1 1 B S 1 2 2 BASE V G 2 EMITTER C H D J K MAXIMUM RATINGS Rating Symbol 2907 2907A Unit Collector – Emitter Voltage VCEO –40 –60 Vdc Collector – Base Voltage VCBO Emitter – Base Voltage VEBO Collector Current — Continuous IC –60 –5.0 –600 SOT-23 Dim Min Max Vdc A 2.800 3.040 Vdc B 1.200 1.400 C 0.890 1.110 mAdc THERMAL CHARACTERISTICS Characteristic Junction and Storage Temperature 0.500 1.780 2.040 H 0.013 0.100 Max Unit PD 225 mW J 0.085 0.177 mW/°C K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 1.8 RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient 0.370 Symbol Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient D G All Dimension in mm DEVICE MARKING MMBT2907 = M2B; MMBT2907A = 2F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max –40 –60 — — Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –10 mAdc, IB = 0) V(BR)CEO MMBT2907 MMBT2907A Vdc Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) V(BR)CBO –60 — Vdc Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO –5.0 — Vdc ICEX — –50 nAdc MMBT2907 MMBT2907A — — –0.020 –0.010 MMBT2907 MMBT2907A — — –20 –10 — –50 Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc) Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 125°C) Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) 0.062 in. 0.024 in. 99.5% alumina. 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A µAdc ICBO IB nAdc 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. REM : Thermal Clad is a trademark of the Bergquist Company. Any changing of specification will not be informed individual Page 1 of 4 MMBT2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max MMBT2907 MMBT2907A 35 75 — — (IC = –1.0 mAdc, VCE = –10 Vdc) MMBT2907 MMBT2907A 50 100 — — (IC = –10 mAdc, VCE = –10 Vdc) MMBT2907 MMBT2907A 75 100 — — (IC = –150 mAdc, VCE = –10 Vdc) (3) MMBT2907 MMBT2907A — 100 — 300 (IC = –500 mAdc, VCE = –10 Vdc) (3) MMBT2907 MMBT2907A 30 50 — — — — –0.4 –1.6 — — –1.3 –2.6 200 — — 8.0 — 30 ton — 45 td — 10 tr — 40 toff — 100 ts — 80 tf — 30 Unit ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) hFE — Collector – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VBE(sat) Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (3),(4) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo MHz pF pF SWITCHING CHARACTERISTICS Turn–On Time (VCC = –30 30 Vdc, Vdc IC = –150 150 mAdc mAdc, IB1 = –15 15 mAdc) Delay Time Rise Time Turn–Off Time (VCC = –6.0 6 0 Vdc Vdc, IC = –150 150 mAdc, mAdc IB1 = IB2 = –15 15 mAdc) Storage Time Fall Time v v ns ns 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns –30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 50 –16 V 200 ns Figure 1. Delay and Rise Time Test Circuit http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns +15 V –6.0 V 1.0 k 1.0 k 0 –30 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns Figure 2. Storage and Fall Time Test Circuit Any changing of specification will not be informed individual Page 2 of 4 MMBT2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL CHARACTERISTICS 3.0 VCE = –1.0 V VCE = –10 V hFE , Normalized Current Gain 2.0 TJ = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.3 0.2 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 I C, Collector Current (mA) Figure 3. DC Current Gain VCE , Collector–Emitter Voltage (V) –1.0 –0.8 IC = –1.0 mA –10 mA –100 mA –500 mA –0.6 –0.4 –0.2 0 –0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 I B, Base Current (mA) –3.0 –2.0 –5.0 –7.0 –10 –20 –30 –50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = –30 V IC/IB = 10 TJ = 25°C 30 20 td @ VBE(off) = 0 V tf 3.0 –5.0 –7.0 –10 2.0 V –20 –30 –50 –70 –100 IC, Collector Current Figure 5. Turn–On Time http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 100 70 50 30 t′s = ts – 1/8 tf 20 10 7.0 5.0 VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, Time (ns) t, Time (ns) 300 200 –200 –300 –500 10 7.0 5.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 I C, Collector Current (mA) –200 –300 –500 Figure 6. Turn–Off Time Any changing of specification will not be informed individual Page 3 of 4 MMBT2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 f = 1.0 kHz 8.0 NF, Noise Figure (dB) NF, Noise Figure (dB) 8.0 IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 4.0 0 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, Frequency (kHz) R s, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 50 k 400 Ceb 10 7.0 5.0 Ccb 3.0 2.0 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 f T, Current–Gain — Bandwidth Product (MHz) 20 C, Capacitance (pF) IC = –50 µA –100 µA –500 µA –1.0 mA 2.0 30 –20 –30 300 200 100 80 VCE = –20 V TJ = 25°C 60 40 30 20 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000 Reverse Voltage (VOLTS) I C, Collector Current (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product +0.5 –1.0 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 RqVC for VCE(sat) Coefficient (mV/ ° C) –0.8 VBE(on) @ VCE = –10 V –0.6 V, Voltage (V) 6.0 –0.4 –0.2 –0.5 –1.0 –1.5 RqVB for VBE –2.0 VCE(sat) @ IC/IB = 10 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A –50 –100 –200 –500 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 I C, Collector Current (mA) I C, Collector Current (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients Any changing of specification will not be informed individual Page 4 of 4