SECOS MMBT2222FW

MMBT2222FW
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
FEATURES
·
·
·
Epitaxial Planar Die Construction
SOT-523
A
Complementary PNP Type Available
(MMBT2907FW)
L
Ideal for Medium Power Amplification and
Switching
3
B S
Top View
1
2
COLLECTOR
3
V
G
3
1
C
BASE
1
2
H
D
J
K
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
MMBT2222FW
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Base Voltage
VCBO
75
Vdc
Emitter – Base Voltage
VEBO
6
Vdc
IC
600
mAdc
Collector Current — Continuous
Dim
Min
Max
A
1.500
1.700
B
0.780
0.820
C
0.800
0.820
D
0.280
0.320
G
0.900
1.100
H
0.000
0.100
0.200
J
0.100
K
0.350
0.410
L
0.490
0.510
S
1.500
1.700
V
0.280
0.320
All Dimension in mm
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
150
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2222FW = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
75
—
Vdc
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ICEX
—
10
nAdc
Collector Cutoff Current (V CB = 60 Vdc, IE = 0)
ICBO
—
0.01
µAdc
—
10
IEBO
—
100
nAdc
IBL
—
20
nAdc
OFF CHARACTERISTICS
(V CB = 60 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current (V EB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 5
MMBT2222FW
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
35
50
75
—
—
—
100
40
300
—
—
0.3
—
1.0
0.6
1.2
—
2.0
300
—
—
—
8.0
—
25
2.0
0.25
8.0
1.25
—
—
8.0
4.0
50
75
300
375
5.0
25
35
200
—
150
—
4.0
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
hFE
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
—
VCE(sat)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
Vdc
VBE(sat)
(IC = 500 mAdc, IB = 50 mAdc)
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
Small – Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
rb, Cc
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
MHz
pF
pF
kΩ
X 10– 4
—
mmhos
ps
NF
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
v
((VCC = 30 Vdc,, VBE(off) = – 0.5 Vdc,,
IC = 150 mAdc, IB1 = 15 mAdc)
td
—
10
tr
—
25
((VCC = 30 Vdc,, IC = 150 mAdc,,
IB1 = IB2 = 15 mAdc)
ts
—
225
tf
—
60
v
ns
ns
3. Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 5
MMBT2222FW
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+ 30 V
1.0 to 100 µs,
Duty Cycle ≈ 2.0%
+16 V
0
–2 V
200
1.0 to 100 µs,
Duty Cycle ≈ 2.0%
+16 V
200
0
1 kΩ
CS* < 10 pF
< 2 ns
1k
–14 V
< 20 ns
CS* < 10 pF
1N914
–4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
1000
700
500
hFE , DC Current Gain
300
200
100
70
50
30
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, Collector Current (mA)
30
50
70
100
200
5.0
10
300
500 700 1.0 k
Figure 3. DC Current Gain
VCE , Collector–Emitter Voltage (V)
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
I B, Base Current (mA)
2.0
3.0
20
30
50
Figure 4. Collector Saturation Region
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 5
MMBT2222FW
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts – 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
20 30
50 70 100
I C, Collector Current (mA)
200 300
500
5.0 7.0 10
20
Figure 5. Turn – On Time
IC = 1.0 mA, RS = 150 Ω
500 µA, RS = 200 Ω
100 µA, RS = 2.0 kΩ
50 µA, RS = 4.0 kΩ
300
500
6.0
f = 1.0 kHz
8.0
NF, Noise Figure (dB)
NF, Noise Figure (dB)
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
4.0
2.0
IC = 50 µA
100 µA
500 µA
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
0
50
50 100
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, Frequency (kHz)
RS, Source Resistance (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
f T, Current–Gain Bandwidth Products (MHz)
500
20
Ceb
Capacitance (pF)
200
10
8.0
10
7.0
5.0
Ccb
3.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
Reverse Voltage (V)
Figure 9. Capacitances
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
30
50 70 100
I C, Collector Current (mA)
Figure 6. Turn – Off Time
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, Time (ns)
t, Time (ns)
100
70
50
20 30
50
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20
IC, Collector Current (mA)
30
50
70 100
Figure 10. Current–Gain Bandwidth Product
Any changing of specification will not be informed individual
Page 4 of 5
MMBT2222FW
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
1.0
+0.5
TJ = 25°C
0
0.8
Coefficient (mV/ °C)
V, Voltage (V)
VBE(sat) @ IC/IB = 10
1.0 V
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
RqVC for VCE(sat)
– 0.5
– 1.0
– 1.5
RqVB for VBE
– 2.0
VCE(sat) @ IC/IB = 10
0
– 2.5
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
I C, Collect Current (mA)
Figure 11. “On” Voltages
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
500 1.0 k
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
I C, Collect Current (mA)
500
Figure 12. Temperature Coefficients
Any changing of specification will not be informed individual
Page 5 of 5