2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features Epitaxial Planar Die Construction Complementary NPN Type Available 2N2222A TO–92 Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO –60 Vdc Collector±Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W Operating and Storage Junction Temperature Range 1 2 COLLECTOR 1 2 BASE THERMAL CHARACTERISTICS Characteristic 3 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) V(BR)CEO –40 — Vdc Collector–Base Breakdown Voltage (IC = –10 Adc, IE = 0) V(BR)CBO –60 — Vdc Emitter–Base Breakdown Voltage (IE = –10 Adc, IC = 0) V(BR)EBO –5.0 — Vdc Collector Cut-off Current (VCE = –50 Vdc, VEB(off) = –0.5 Vdc) ICEX — –50 nAdc Collector Cut-off Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 150°C) ICBO — — –0.10 –15 Emitter Cut-off Current (VEB = –3.0 Vdc) IEBO — –100 nAdc Collector Cut-off Current (VCE = –35 V) ICEO — –100 nAdc Base Cut-off Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IBEX — –50 nAdc OFF CHARACTERISTICS µAdc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 5 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 75 50 100 100 50 — — — 300 — — — –0.3 –1.0 — — –1.3 –2.0 fT 200 — MHz Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo — 30 pF ton — 50 ns td — 10 ns tr — 40 ns toff — 110 ns ts — 80 ns tf — 30 ns ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc)(1) (IC = –500 mAdc, VCE = –10 Vdc)(1) hFE — Collector–Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) Base–Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VBE(sat) Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(1), (2) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn–On Time Delay Time (VCC = –30 30 Vdc, Vd IC = –150 150 mAdc, Ad IB1 = –15 mAdc) (Figures 1 and 5) Rise Time Turn–Off Time Storage Time (VCC = –6.0 6 0 Vdc, Vd IC = –150 150 mAdc, Ad IB1 = IB2 = –15 mAdc) (Figure 2) Fall Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 50 -16 V TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 200 ns Figure 1. Delay and Rise Time Test Circuit http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns +15 V -6.0 V 1.0 k 1.0 k 0 -30 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns Figure 2. Storage and Fall Time Test Circuit Any changing of specification will not be informed individual Page 2 of 5 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125°C 25°C 1.0 -55°C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 30 20 10 300 VCC = -30 V IC/IB = 10 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 td @ VBE(off) = 0 V 7.0 5.0 3.0 -5.0 -7.0 -10 Figure 5. Turn–On Time http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A tf 100 70 50 30 t′s = ts - 1/8 tf 20 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn–Off Time Any changing of specification will not be informed individual Page 3 of 5 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 Ω -500 µA, Rs = 560 Ω -50 µA, Rs = 2.7 kΩ -100 µA, Rs = 1.6 kΩ 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 C, CAPACITANCE (pF) IC = -50 µA -100 µA -500 µA -1.0 mA 4.0 0 100 30 Ceb 10 7.0 5.0 Ccb 3.0 2.0 -0.1 6.0 2.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz 50 k 400 300 200 100 80 VCE = -20 V TJ = 25°C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product +0.5 -1.0 V, VOLTAGE (VOLTS) 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) TJ = 25°C -0.8 VBE(on) @ VCE = -10 V -0.6 -0.4 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 RVC for VCE(sat) -50 -100 -200 -500 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients Any changing of specification will not be informed individual Page 4 of 5 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor ƔTO-92 PACKAGE OUTLINE DIMENSIONS Symbol A A1 b c D D1 E e e1 L Ö http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 Any changing of specification will not be informed individual Page 5 of 5