SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A 3 C B Top View 1 1 K 2 E 2 D FEATURES L 3 F Low RDS(on) provides higher efficiency and extends battery life. Miniature SC-59 surface mount package saves board space. High power and current handling capability. MLow side high current DC-DC Converter applications G REF. A B C D E F PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage ID @ TA=25°C ID @ TA=70°C Continuous Drain Current 1 2 IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 PD @ TA=25°C PD @ TA=70°C Power Dissipation 1 ID PD Tj, Tstg Operating Junction and Storage Temperature Range Ratings Maximum 20 ±12 4.0 3.1 ±20 1.6 1.3 0.8 -55 ~ 150 Unit V V A A A A W W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient 1 t ≦ 5 sec Steady State Symbol Maximum Unit RJA 100 166 °C / W Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 27-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Symbol Min. Typ. Max. Unit Test Conditions VGS(th) 0.7 - - V VDS=VGS, ID= 250uA IGSS - - ±100 nA VDS= 0V, VGS= ±8V - - 1 - - 10 10 - - - - 32 IDSS ID(on) VDS= 16V, VGS= 0V uA RDS(ON) VDS= 16V, VGS= 0V, TJ= 55°C A VDS = 5V, VGS= 4.5V VGS= 4.5V, ID= 4.6A mΩ - - 44 VGS= 2.5V, ID= 3.9A Forward Transconductance 1 gfs - 11.3 - S VDS= 10V, ID= 4.0A Diode Forward Voltage VSD - 0.75 - V IS= 1.6A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 13.4 - Gate-Source Charge Qgs - 0.9 - Gate-Drain Charge Qgd - 2.0 - Turn-on Delay Time Td(on) - 8 - Tr - 24 - Td(off) - 35 - Tf - 10 - Trr - 40 - Rise Time Turn-off Delay Time Fall Time Source-Ddrain Reverse Recovery Time nC VDS= 10V, VGS= 4.5V, ID= 4.0A VDD= 10V, VGEN= 4.5V, RL= 15, ID= 1A nS IF=1.6A, di/dt =100 A/uS Notes 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 27-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2