STT3470N 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E 1 2 3 C Low RDS(on) provides higher efficiency and extend battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology H J K DG FEATURES L 4 B F 5 6 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package MPQ LeaderSize TSOP-6 3K 7’ inch D D D D G S ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range TA= 25°C TA= 25°C Symbol Ratings Unit VDS VGS ID IDM IS PD Tj, Tstg 100 ±20 2.2 ±10 1.1 2 -55 ~ 150 V V A A A W °C Thermal Resistance Ratings Parameter Maximum Junction to Ambient 1 t ≦ 10 sec Steady State Symbol Typ. Max. Unit RJA 93 130 110 150 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 30-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 STT3470N 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Symbol Min. Typ. Max. Unit Test Conditions VGS(th) 1 - - V VDS=VGS, ID= 250uA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= ±8V - - 1 Zero Gate Voltage Drain Current IDSS - - 10 10 - - - - 280 On-State Drain Current 1 Drain-Source On-Resistance 1 ID(on) RDS(ON) A A - 355 VDS= 80V, VGS= 0V, TJ= 55°C VDS = 5V, VGS= 10V mΩ - VDS= 80V, VGS= 0V VGS= 10V, ID= 2.2A VGS= 5.5V, ID= 2A Forward Transconductance 1 gfs - 11.3 - S VDS= 10V, ID= 2.2A Diode Forward Voltage VSD - 0.75 - V IS= 1.6A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 7.0 - Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 20 - Turn-on Delay Time Td(on) - 8 - Tr - 24 - Td(off) - 35 - Tf - 10 - Rise Time Turn-off Delay Time Fall Time nC VDS= 10V, VGS= 5.5V, ID= 2.2A nS VDD= 10V, VGEN= 4.5V, RL= 15, ID= 1A Notes： 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 30-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2