IRFNJZ48 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400) 3.05 (0.120) 0.127 (0.005) 55V 22A Ω 0.016Ω FEATURES 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) • SIMPLE DRIVE REQUIREMENTS SMD05 (TO-276AA) PAD1 = SOURCE PAD 2 = DRAIN • HERMETICALLY SEALED PAD3 = GATE • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID* Continuous Drain Current @ Tcase = 25°C 22A ID* Continuous Drain Current @ Tcase = 100°C 22A IDM Pulsed Drain Current 88A PD Power Dissipation @ Tcase = 25°C 75W Linear Derating Factor TJ , Tstg Operating and Storage Temperature Range RθJC Thermal Resistance Junction to Case 0.6 W/°C –55 to 150°C 1.67°C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Document Number 5610 Issue 1 IRFNJZ48 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Test Conditions VGS = 0 ID = 250µA Min. Typ. Max. 55 Reference to 25°C V 0.056 V / °C Breakdown Voltage ID = 1mA Static Drain – Source On–State VGS = 10V ID = 22A VDS = VGS ID = 250µA 2 Forward Transconductance VDS ≥ 25V IDS = 22A 22 Zero Gate Voltage Drain Current VDS = 55V VGS = 0 25 VGS = 0 VDS = 44V TJ = 125°C 250 IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = -20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1900 Coss Output Capacitance VDS = 25V 620 Crss Reverse Transfer Capacitance f = 1MHz 270 Qg Total Gate Charge VGS = 10V 101 Qgs Gate – Source Charge VDS = 44V 19 Qgd Gate – Drain (“Miller”) Charge ID = 22A 41 td(on) Turn–On Delay Time VDD = 28V 23 tr Rise Time ID = 22A 141 td(off) Turn–Off Delay Time RG = 5.1Ω 60 tf Fall Time 98 IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 22* ISM Pulse Source Current 88 VSD Diode Forward Voltage trr Reverse Recovery Time IF = 16A Qrr Reverse Recovery Charge di / dt ≤ 100A/µs VDD ≤ 30V RDS(on) gfs IDSS 0.016 Resistance VGS(th) Gate Threshold Voltage IS = 22A TJ = 25°C VGS = 0 TJ = 25°C Unit 4 Ω V (Ω) S(Ω µA nA pF nC ns A 1.3 V 104 ns 210 nC * Current Limited by package Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Document Number 5610 Issue 1