SEME-LAB IRFF220

2N6790
IRFF220
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
ENHANCEMENT MODE
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
0.89 max.
(0.035)
12.70
(0.500)
min.
FEATURES
0.41 (0.016)
0.53 (0.021)
dia.
• REPETITIVE AVALANCHE RATING
• SIMPLE DRIVE REQUIREMENTS
5.08 (0.200)
typ.
2.54
(0.100)
2
1
• HERMETICALLY SEALED
3
0.74 (0.029)
1.14 (0.045)
APPLICATIONS
0.71 (0.028)
0.53 (0.021)
• FAST SWITCHING
• MOTOR CONTROLS
45°
• POWER SUPPLIES
TO39 Package (TO-205AF)
Pin 1 - Source
Underside View
Pin 2 - Gate
Pin 3 - Drain and Case
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS
Drain Source Voltage
200V
ID @Tcase = 25°C
Continuous Drain Current
3.5A
ID @Tcase = 100°C
2.25A
IDM
Continuous Drain Current
Pulsed Drain Current 1
VGS
Gate Source Voltage
±20V
[email protected] Tcase = 25°C
Maximum Power Dissipation
20W
RθJ-C
RθJ-A
Thermal Resistance Junction To Case
6.25°C/W
Thermal Resistance Junction To Ambient
175°C/W
TJ,Tstg
Operating and Storage Temperature Range
Lead Temperature
( 1.6mm from case for 10 secs)
14A
-55 to +150°C
300°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 6445
Issue 1
2N6790
IRFF220
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
VGS = 0
ID = 1.0mA
200
VGS(th)* Gate Threshold Voltage
VDS = VGS
ID = 250μA
2.0
V
4.0
IGSSF
Gate Body Leakage Forward
VGS = 20V
100
IGSSR
Gate Body Leakage Reverse
VGS = -20V
-100
IDSS
Zero Gate Voltage Drain Current
VGS =0
25
TC = 125°C
250
VGS = 10V
ID = 2.25A
0.80
Resistance
VGS = 10V
ID = 3.5A
0.92
Forward Transconductance
VDS = 15V
IDS = 2.25A
VDS = 25V
RDS(on)* Static Drain Source On-State
gfs*
VDS = 160V.
1.5
nA
μA
Ω
Ω
S( )
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
Coss
Output Capacitance
f = 1.0MHz
Crss
Reverse Transfer Capacitance
td(on)
Turn–On Delay Time
VDD = 100V
tr
Rise Time
RG = 7.5Ω
50
td(off)
Turn–Off Delay Time
(MOSFET switching times are essentially
50
tf
Fall Time
independent of operating temperature.)
50
Qg
Qgs
Total Gate Charge
VGS = 10V
Gate To Source Charge
VDS = 100V
Qgd
Gate To Drain (“Miller”) Charge
IS
260
pF
100
30
ID = 3.5A
40
ID = 3.5A
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
Modified MOS POWER
Continuous Source Current (Body
14.3
0.9
3.0
2.3
9.0
nC
V
,
3.5
Diode)
symbol showing the intergal
ISM
Source Current (Body Diode)
P-N junction rectifier.
VSD
Diode Forward Voltage*
trr
Reverse Recovery Time
IF = 3.5A
QRR
Reverse Recovery Charge
di / dt = 100A/μs VDD = 50V
IS = 3.5A
8.0
ns
/
A
5
VGS = 0
TJ = 25°C
TJ = 25°C
14
1.5
V
400
ns
4.3
μC
Notes
* Pulse Test: Pulse Width ≤ 300μs, δ ≤ 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 6445
Issue 1