SPGP0365A/SPGN0365A VER : Preliminary_2 ( SEMIHOW POWER SWITCH ) FEATURES Variable frequency operation Low Start-up Current(Typ.100uA ) Pulse by Pulse Current Limiting APPLICATION SMPS for STB, SVR, DVD & DVCD SMPS for Printer, Facsimile & Scanner Adaptor Over Current Protection Over Voltage Protection (Min. 20) SPGN0365A SPGP0365A Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Frequency Modulation for low EMI Advanced Burst-Mode Operation DESCRIPTION The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components. The SemiHow Power Switch consists of a high voltage power SenseFET and a current mode PWM IC. It has a basic platform well suited for the cost effective design in either a flyback converter INTERNAL BLOCK DIAGRAM ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary DEC 2009 Ta=25°C, unless otherwise specified SPGP0365A Symbol Parameter Drain-Source Voltage VDSS Value Units 650 V Drain Current – Continuous (TC = 25℃) 3.0 A Drain Current – Continuous (TC = 100℃) 2.4 A IDM Drain Current – Pulsed 12 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy 248 mJ VCC(MAX) Maximum Supply voltage 20 V VFB Analog Input Voltage Range -0.3 To VSD V PD Power Dissipation (TC = 25℃) - Derate above 25℃ TJ ID (Note 1) (Note 2) 75 W 0.6 W/℃ Operating Junction Temperature +160 ℃ TA Operating Ambient Temperature -25 to +85 ℃ TSTG Storage Temperature Range -55 to +150 ℃ Value Units 650 V SPGN0365A Symbol VDSS Parameter Drain-Source Voltage Drain Current – Continuous (TC = 25℃) 0.42 A Drain Current – Continuous (TC = 100℃) 0.28 A IDM Drain Current – Pulsed 3 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy 127 mJ VCC(MAX) Maximum Supply voltage 20 V VFB Analog Input Voltage Range -0.3 To VSD V PD Power Dissipation (TC = 25℃) - Derate above 25℃ TJ ID (Note 1) (Note 2) 1.56 W 0.0125 W/℃ Operating Junction Temperature +160 ℃ TA Operating Ambient Temperature -25 to +85 ℃ TSTG Storage Temperature Range -55 to +150 ℃ Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=51mH, IAS=3.0A, VDD=50V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Absolute Maximum Ratings Ta=25°C, unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units -- 3.0 3.75 Ω 650 -- -- V VDS = 650 V, VGS = 0 V -- -- 50 ㎂ VDS = 520 V, TC = 125℃ -- -- 200 ㎂ -- 450 580 ㎊ -- 55 72 ㎊ -- 12 15.5 ㎊ -- 18 -- ㎱ -- 15 -- ㎱ -- 80 -- ㎱ -- 30 -- ㎱ -- 13 17 nC -- 2.5 -- nC -- 5.5 -- nC On Characteristics Static Drain-Source On-Resistance RDS(ON) VGS = 10 V, ID = 1.5 A Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS = 0 V, ID = 50 ㎂ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time Tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 325 V, ID = 3.0 A, RG = 25 Ω (Note 4,5) VDS = 325V, ID = 3.0 A, VGS = 10 V (Note 4,5) Notes : 1. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 2. S= 1 R ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Electrical Characteristics ( SenseFET Part ) Ta=25°C, unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units UVLO Section VSTART Start Threshold Voltage VFB = GND 14 15 16 V VSTOP Stop Threshold Voltage VFB = GND 8.4 9 9.6 V 57 64 71 KHz -- ±5 ±10 % 73 77 82 % Oscillator Section FOSC -DMAX Initial Accuracy Frequency Change With Temperature (Note 2) -25°C ≤ Ta ≤ +85°C Maximum Duty Cycle FEEDBACK Section IFB Feedback Source Current Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA VSD Shutdown Feedback Voltage Vfb>6.5V 5.4 6 6.6 V Idelay Shutdown Delay Current Ta=25°C, 5VδVfbδVSD 4 5 6 mA 4.8 5 5.2 V -- 0.3 0.6 mV/°C 1.62 2.0 2.38 A 20 -- 23 V 140 160 -- °C Reference Section VREF Reference Output Voltage (Note 1) Ta=25°C Vref/∆T Temperature Stability (Note 1 , 2) IOVER Peak Current Limit -25°C ≤ Ta ≤ +85°C Max. inductor current Protection Section VOVP Over Voltage Protection TSD Thermal Shutdown Temperature (Tj) (Note 1) VCC > 20V -- Protection Section ISTART IOP Start-up Current VCC = 14V -- 100 170 µΑ Operating Supply Current (Control Part Only) VCC < 20V -- 3 6 mA Notes : 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Electrical Characteristics ( Control Part ) (SPGP0365A) 10 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ID, Drain Current [A] ID, Drain Current [A] 101 100 * Notes : 1. 300us Pulse Test 2. TC = 25oC 100 150oC 1 25oC -25oC 0.1 101 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 10 IDR, Reverse Drain Current [A] 7 RDS(ON) [Ω], Drain-Source On-Resistance * Notes : 1. VDS= 30V 2. 300us Pulse Test 6 5 VGS = 10V 4 3 VGS = 20V 2 1 0.1 25oC 150oC * Notes : 1. VGS= 0V 2. 300us Pulse Test 1 ∗ Note : TJ = 25oC 0.01 0 0 1 2 3 4 5 0.4 6 0.6 Capacitances [pF] 800 Ciss Coss 400 1.2 * Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 12 VDS = 130V VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1000 0.8 VSD, Source-Drain Voltage [V] ID, Drain Current [A] 10 VDS = 325V VDS = 520V 8 6 4 2 * Note : ID = 3.0A 0 10-1 0 100 101 0 3 6 9 12 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 15 ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Typical Characteristics ( SenseFET Part ) (SPGP0365A) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 1.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] o TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 3.0 Operation in This Area is Limited by R DS(on) 2.5 101 ID, Drain Current [A] 10 ms 100 ms DC 0 10 10-1 * Notes : 1. TC = 25 oC 10-2 100 2.0 1.5 1.0 0.5 2. TJ = 150 oC 3. Single Pulse 101 102 0.0 25 103 50 75 Figure 9. Maximum Safe Operating Area 100 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response ID, Drain Current [A] 1 ms Figure 10. Maximum Drain Current vs Case Temperature D=0.5 0.2 * Notes : 1. ZθJC(t) = 1.66 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 10-1 0.05 0.02 PDM 0.01 10-2 10-5 t1 single pulse 10-4 10-3 10-2 t2 10-1 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Typical Characteristics ( SenseFET Part ) (continued) (SPGN0365A) 101 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 ID, Drain Current [A] ID, Drain Current [A] Top : 100 150oC 1 -55oC 25oC * Notes : 1. VDS= 50V 2. 250us Pulse Test * Notes : 1. 250us Pulse Test 2. TC = 25oC 100 0.1 101 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 8.0 7.0 6.5 VGS = 10V 6.0 5.5 5.0 4.5 4.0 101 IDR , Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 7.5 VGS = 20V 3.5 100 150oC * Note : 1. VGS = 0V 2. 250µs Pulse Test ∗ Note : TJ = 25 C 3.0 o 2.5 0 1 2 3 4 5 6 7 10-1 0.2 0.4 0.6 800 Ciss Coss 400 1.2 1.4 * Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 12 VDS = 130V VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1000 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitances [pF] 25oC 10 VDS = 325V VDS = 520V 8 6 4 2 * Note : ID = 3.0A 0 10-1 0 10 1 10 0 0 3 6 9 12 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 15 ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Typical Characteristics ( SenseFET Part ) (SPGN0365A) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 1.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 0.5 ID, Drain Current [A] ID, Drain Current [A] 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 102 ZθJC(t), Thermal Response D=0.5 0.2 101 0.1 * Notes : 1. ZθJC(t) = 80 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.05 100 0.02 0.01 PDM single pulse 10-1 10-5 10-4 t1 10-3 10-2 t2 10-1 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Typical Characteristics ( SenseFET Part ) (continued) (continued) (These characteristic graphs are normalized at Ta=25°C) 1.20 1.20 1.15 1.15 1.10 1.10 1.05 Fosc 1.05 Ifb 1.00 1.00 0.95 0.95 0.90 0.90 0.85 0.80 -25 0.85 0 25 50 75 100 125 0.80 -25 150 Figure 1. Operating Frequency 1.20 2.0 1.15 1.8 1.10 1.6 75 100 125 150 1.2 0.95 1.0 0.90 0.8 0.85 0.6 0 25 50 75 100 125 150 Figure 3. Operating Supply Current 0.4 -25 1.20 1.15 1.15 1.10 1.10 1.05 1.05 Vstart1.00 Vstop1.00 0.95 0.95 0.90 0.90 0.85 0 25 50 75 100 125 150 125 150 Figure 4. Start up Current 1.20 0.80 -25 50 1.4 Istart 1.00 0.80 -25 25 Figure 2. Feedback Source Current 1.05 Iop 0 0.85 0 25 50 75 100 125 150 Figure 5. Start Threshold Voltage 0.80 -25 0 25 50 75 100 Figure 6. Stop Threshold Voltage 1.20 1.15 1.10 1.05 Vovp 1.00 0.95 0.90 0.85 0.80 -25 0 25 50 75 100 125 150 Figure 7. Over Voltage Protection ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Typical Performance Characteristics ( Control Part ) SPGN0365A/SPGP0365A-Preliminary Package Dimension ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary ◎ SEMIHOW REV.PLIMILARY”DEC 2009