AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Features VDS 60V 37A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 20mΩ RDS(ON) (at VGS = 4.5V) < 25mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case 1/6 7 30 A EAS, EAR 45 mJ 60 Steady-State Steady-State W 30 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s A IAS, IAR PDSM TA=70°C A 5 PD TC=100°C V 60 IDSM TA=70°C ±20 26 IDM TA=25°C Continuous Drain Current Units V 37 ID TC=100°C Maximum 60 -55 to 175 Typ 17.4 51 1.8 °C Max 25 60 2.5 Units °C/W °C/W °C/W www.freescale.net.cn AOD442/AOI442 60V N-Channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=48V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.6 VGS=10V, VDS=5V 60 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A 2.1 µA 100 nA 2.7 V A 16 20 31 37 20 25 mΩ 1 V 32 A 65 0.7 mΩ S 1535 1920 2300 pF 108 155 200 pF 70 116 165 pF 0.3 0.65 0.8 Ω 38 47.6 68 nC 20 24.2 30 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 46 4.8 6 7 nC 8.5 14.4 20 nC 7.4 VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω Units V 1 TJ=55°C gFS Max 60 VGS(th) ID(ON) IS Typ ns 5.1 ns 28.2 ns 5.5 ns 41 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOD442/AOI442 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 10V VDS=5V 4.5V 50 40 125°C 30 4V ID(A) ID (A) 40 30 20 20 3.5V 10 10 25°C VGS=3V 0 0 0 1 2 3 4 2 5 2.5 30 Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ) 4 4.5 2.4 26 22 18 14 VGS=10V 2.2 VGS=10V ID=20A 2 1.8 17 5 2 VGS=4.5V10 1.6 1.4 1.2 ID=20A 1 0.8 10 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 50 1.0E+02 ID=20A 1.0E+01 40 40 1.0E+00 30 IS (A) RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 20 25°C 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOD442/AOI442 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 Capacitance (pF) VGS (Volts) 3000 VDS=30V ID=20A 8 6 4 2 Ciss 2500 2000 1500 Coss 1000 Crss 500 0 0 0 10 20 30 40 0 50 10 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 160 RDS(ON) limited DC 1.0 100µs 1ms 10ms TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 1 10 VDS (Volts) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 17 5 2 10 120 80 40 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175°C TC=25°C 10µs Power (W) ID (Amps) 100.0 ZθJC Normalized Transient Thermal Resistance 60 200 1000.0 10.0 20 1000 0 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=2.5°C/W 1 PD 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 T 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD442/AOI442 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C 10 TA=125°C 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 37A 20 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 50 TA=25°C 40 1000 Power (W) Current rating ID(A) 40 0 1 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 150 175 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 60 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOD442/AOI442 60V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.freescale.net.cn