SHENZHENFREESCALE AO6604

Freescale
AO6 6 04 / MC6 6 04
N & P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY
VDS (V)
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
•
•
•
20
-20
rDS(on) (Ω)
ID (A)
0.058 @ VGS = 4.5V
0.082 @ VGS = 2.5V
0.160 @ VGS = 1.8V
0.112 @ VGS = -4.5V
0.172 @ VGS = -2.5V
0.210 @ VGS = -1.8V
3.7
3.1
2.2
-2.7
-2.2
-2.0
TSOP-6
Top View
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
D1
G1
1
6
D1
S2
G2
2
3
5
4
S1
D2
S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channe l P-Channe l Units
VDS
20
-20
Drain-Source Voltage
V
VGS
±12
±12
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
ID
TA=70 C
b
IDM
Pulsed Drain Current
a
IS
Continuous Source Current (Diode Conduction)
o
TA=25 C
a
Power Dissipation
o
-2.7
2.9
-2.1
8
-8
1.05
-1.05
A
A
1.15
PD
W
0.7
TA=70 C
Operating Junction and Storage Temperature Range
3.7
TJ, Tstg
o
C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec
Steady State
RthJA
N-Channel
Typ
Max
P-Channel
Typ
Max
93
130
93
130
110
150
110
150
Unit
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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Freescale
AO6 6 04 / MC6 6 04
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Ch
Limits
Min Typ
Max Unit
Static
VGS(th)
Gate-Threshold Voltage
Gate-Body Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
A
ID(on)
A
Drain-Source On-Resistance
Forward Tranconductance
Diode Forward Voltage
A
A
rDS(on)
gfs
VSD
VGS = VDS, ID = 250 uA
N
1
VGS = VDS, ID = -250 uA
VDS = 0 V, VGS = 12 V
VDS = 0 V, VGS = -12 V
VDS = 16 V, VGS = 0 V
VDS = -16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, T J = 55oC
VDS = -16 V, VGS = 0 V, TJ = 55oC
VDS = 5 V, VGS = 4.5 V
VDS = -5 V, VGS = -4.5 V
VGS = 4.5 V, ID = 3.7 A
VGS = -4.5 V, ID = 3.1 A
VGS = 2.5 V, ID = 2.7 A
VGS = -2.5 V, ID = -2.2 A
VGS = 1.8 V, ID = 2.2 A
VGS = -1.8 V, ID = -2.0 A
VDS = 5 V, ID = 3.7 A
VDS = -5 V, ID = 3.1 A
IS = 1.05 A, VGS = 0 V
IS = -1.05 A, VGS = 0 V
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
-1
N-Channel
VDS=15V, VGS=4.5V, ID=2.7A
P-Channel
VDS=-15V, VGS=-4.5V, ID=-3.1A
N
P
N
P
N
7.5
3.8
0.6
0.6
1.0
P
N
P
N
P
N
P
N
P
1.5
5
5
12
15
13
20
7
20
V
100
-100
1
-1
10
-10
5
-5
uA
uA
uA
A
0.058
0.112
0.082
0.172
0.160
0.210
10
5
0.80
-0.83
Ω
S
S
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall-Time
tr
td(off)
tf
N-Chaneel
VDD=15V, VGS=4.5V, ID=1A ,
RGEN=15Ω,
P-Channel
VDD=-15V, VGS=-4.5V, ID=-1A
RGEN=15Ω
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notic e to any products herein. Freescale makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor doesfreescale assume any liability arising ou t of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided infreescale data sheet s and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescaleproducts are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
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Freescale
AO6 6 04 / MC6 6 04
Typical Electrical Characteristics (N-Channel)
10
12
VGS = 4.5V
10
8
2.0V
6
4
o
125 C
6
4
2
2
0
0
0
1
2
3
0.5
1
1.5
V DS - Drain-to-Source Voltage (V)
2
2.5
3
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
450
400
CISS
1.8
C - Capacitance (pF)
350
1.6
1.4
2.5V
1.2
300
250
200
150
COSS
100
4.5V
1
50
CRSS
0
0.8
0
2
4
6
8
10
0
12
5
ID - Drain Current (A)
10
15
20
V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
r DS(ON) - On-Resistance (Normalized)
1.6
8
Vgs Voltage ( V )
rDS(ON) - Normalized On-Resistance
25oC
8
ID - Drain Current (A)
ID - Drain Current (A)
T A = -55oC
2.5V
6
4
2
0
0
2
4
6
8
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50
Q g, Gate C harge ( nC )
-25
0
25
50
75
100
125
150
o
TJ - Junction Tempertaure ( C)
Gate Charge
On-Resistance vs. Junction Temperature
3
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Freescale
AO6 6 04 / MC6 6 04
Typical Electrical Characteristics (N-Channel)
100
0.22
rDS(ON) - On-Resistance (OHM)
o
T A = 125 C
1
25oC
0.1
0.01
0.001
0.18
0.14
0.1
0.06
0.02
0.0001
0
0.2
0.4
0.6
0.8
1
1
1.2
2
3
4
5
V GS - Gate-to-Source Voltage (V)
V SD, - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
1.2
10
ID = 250µA
1.1
8
1
Power (W)
0.9
0.8
0.7
6
4
0.6
2
0.5
0.4
0
-50
-25
0
25
50
75
100
125
150
0.01
0.1
1
10
o
TJ - Temperature ( C)
100
1000
Time (sec)
Threshold Voltage
Single Pulse Power
1
D = 0.5
R θJA(t) = r(t) + R θJA
Normailized Effective Transient Thermal Impedance
V GS(th), Variance (V)
IS - Source Current (A)
10
R θJA = 130oC/W
0.2
0.1
0.1
0.05
P(pk)
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 / t2
t1
0.02
0.01
t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
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Freescale
AO6 6 04 / MC6 6 04
Typical Electrical Characteristics (P-Channel)
6
5
VGS =- 4.5V
4
3
-2.0V
2
-1.8V
4
o
125 C
3
2
1
1
0
0
0
0.5
1
1.5
2
2.5
0.5
1
1.5
VDS - Drain-to-Soruce Voltage (V)
2
2.5
3
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
600
2.75
2.5
C - Capacitance (pF)
500
2.25
2
1.75
-2.5V
1.5
1.25
400
CISS
300
200
COSS
100
-4.5V
1
CRSS
0
0.75
0
1
2
3
4
5
0
6
5
10
15
20
VDS - Drain-to- Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
rDS(ON), - On-Resistance (Normalized)
-10
-8
Vgs Voltage ( V )
rDS(ON) - Normalized On-Resistance
25 oC
TA = -55 oC
-2.5V
ID - Drain Current (A)
ID - Drain Current (A)
5
-6
-4
-2
0
0
3
6
9
12
15
1.6
VGS = -4.5V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
TJ - Junction Temperature (oC)
Qg, Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
5
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150
Freescale
AO6 6 04 / MC6 6 04
Typical Electrical Characteristics (P-Channel)
0.4
r DS(ON) - On-Resistance (OHM)
100
TA = 125oC
1
25 oC
0.1
0.01
0.001
0.3
0.25
0.2
0.15
0.1
0.05
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1
1.4
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
10
1.3
8
ID =- 250µA
Power (W)
1.2
1.1
1
0.9
6
4
0.8
2
0.7
0.6
0
-50
-25
0
25
50
75
100
125
150
0.01
0.1
1
10
TJ, - Temperature (oC)
100
1000
Time (sec)
Threshold Voltage
Single Pulse Power
1
D = 0.5
R θJA(t) = r(t) + R θJA
Normailized Effective Transient Thermal Impedance
V GS(th) Variance (V)
IS - Source Current (A)
10
0.35
R θJA = 130oC/W
0.2
0.1
0.1
0.05
P(pk)
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 / t2
t1
0.02
0.01
t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
6
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Freescale
AO6 6 04 / MC6 6 04
Package Information
TSOP-6: 6LEAD
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