SHENZHENFREESCALE AO4924

Freescale
AO4924 / MC4924
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
32 @ VGS = 4.5V
30
40 @ VGS = 2.5V
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
ID (A)
6.5
5.8
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
VDS
30
Drain-Source Voltage
VGS
±12
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA=25oC
a
o
TA=70 C
b
a
Continuous Source Current (Diode Conduction)
TA=25 C
TA=70oC
±50
IS
2.3
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec
Steady-State
RθJA
A
2.0
PD
W
1.3
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
A
±5.3
IDM
Operating Junction and Storage Temperature Range
V
6.5
ID
o
Power Dissipationa
Units
o
C
-55 to 150
Maximum
Units
62.5
o
110
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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Freescale
AO4924 / MC4924
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
0.7
VDS = 0 V, VGS = ±12 V
±100
nA
VDS = 24 V, VGS = 0 V
1
25
uA
o
VDS = 24 V, VGS = 0 V, TJ = 55 C
VDS = 5 V, VGS = ±12 V
VGS = 4.5 V, ID = 6.5 A
VGS = 2.5 V, ID = 5.8 A
VDS = 15 V, ID = 6.5 A
IS = 2.3 A, VGS = 0 V
20
A
32
40
40
0.7
mΩ
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 4.5 V,
ID = 6.5 A
VDD = 25 V, RL = 25 Ω , ID = 1 A,
VGEN = 10 V
6.0
1.0
1.5
20
9
70
20
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without fu rther notice to any products herein. FREESCALE makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
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Freescale
AO4924 / MC4924
Typical Electrical Characteristics
30
20
TA = -55oC
25oC
25
ID - Drain Current (A)
15
2.5V
10
5
125oC
20
15
10
5
0
0
1
0
0.25
0.5
0.75
1
1.25
1.5
1.75
1.5
2
2
2.5
3
3.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
C - Capacitance (pF)
1000
1.4
VGS = 3.0V
1.2
4.5V
1
800
600
Ciss
Coss
400
Crss
200
0
0.8
0
5
10
15
20
0
25
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
rDS(ON) - On-Resistance (Normalized)
10
VGS - Gate-to-Source Voltage (V)
rDS(ON), - Normalized On-Resistance
ID, - Drain Current (A)
4.5V
8
6
4
2
1.6
VGS = 4.5V
1.4
1.2
1
0.8
0.6
0
0
3
6
9
12
-50
15
-25
0
25
50
75
100
125
TJ - Junction Temperature (oC)
Q g - Total Gate Charge (nC )
Gate Charge
On-Resistance vs. Junction Temperature
3
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150
Freescale
AO4924 / MC4924
Typical Electrical Characteristics (N-Channel)
0.07
rDS(ON) - On-Resistance (OHM)
100
IS - Source Current (A)
10
TA = 125oC
1
25oC
0.1
0.01
0.001
0.06
0.05
0.04
0.03
TA = 25oC
0.02
0.01
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
2
1.4
2.5
3
3.5
4
4.5
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
50
1.8
ID = 250µA
1.6
SINGLE PULSE
RθJA = 250°C/W
TA = 25°C
40
Power (W)
1.2
1
0.8
30
20
0.6
10
0.4
0.2
0
0
0.001
-50
-25
0
25
50
75
100
125
0.01
0.1
1
150
10
100
1000
Time (sec)
TJ - Temperature (oC)
Threshold Voltage
Single Pulse Power
1
D =0.5
RθJA (t) = r(t) +
0.2
0.1
Impedance
Normalized Effective Transient Thermal
VGS(th) Variance (V)
1.4
RθJA
RθJA = 250 °C/W
0.1
0.05
P(pk
0.02
t1
0.01
t2
0.01
TJ - TA = P *
RθJA (t)
Duty Cycle, D = t1
/t
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (se c)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
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Freescale
AO4924 / MC4924
Package Information
SO-8: 8LEAD
H x 45°
5
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