AM9435P Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 49 @ VGS = -10V -30 75 @ VGS = -4.5V Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology ID (A) -5.7 -5.0 1 8 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parame ter Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 o TA=25 C a Continuous Drain Current o ID TA=70 C b Pulsed Drain Current Continuous Source Current (Diode Conduction) a ±5.2 IDM ±30 IS -1.6 o TA=25 C a Power Dissipation o PD TA=70 C Operating Junction and Storage Temperature Range Parameter a Maximum Junction-to-Case a Maximum Junction-to-Ambient t <= 10 sec 3.1 A A W 2.0 TJ, Tstg -55 to 150 Symbol t <= 5 sec ±6.5 RθJC RθJA Maximum 25 40 o C Units o C/W C/W o Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM9435_G AM9435P Analog Power o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = -250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A ID(on) Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage Dynamic IDSS A A rDS(on) gfs VSD -1 VDS = 0 V, VGS = ±20 V ±100 nA VDS = -24 V, VGS = 0 V -1 -5 uA VDS = -24 V, VGS = 0 V, T J = 55oC VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -5.7 A VGS = -4.5 V, ID = -5.0 A VDS = -15 V, ID = -5.7 A IS = -2.1 A, VGS = 0 V -30 A 49 75 19 -0.7 mΩ S V b Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge Qgs Qgd VDS = -15 V, VGS = -4.5 V, ID = -5.7 A 6.4 1.9 2.5 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time t d(on) tr td(off) tf VDD = -15 V, RL = 15 Ω , ID = -1 A, VGEN = -10 V, RG = 6Ω 10 2.8 53.6 46 nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM9435_G AM9435P Analog Power Typical Electrical Characteristics (P-Channel) 30 15 -6.0V V TA = -55 oC VDS = -5V -5.0V V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -10V 20 -4.0V 10 25o C 12 125 oC 9 6 3 -3.0V 0 0 0 1 2 3 4 5 6 1 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 2. Body Diode Forward Voltage Variation Figure 1. On-Region Characteristics 800 2 f = 1 MHz VGS = 0 V 700 1.8 CAPACITANCE (pF) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE with Source Current and Temperature 1.6 -4.5V -6.0V 1.4 1.2 -10V CISS 600 500 400 300 COSS 200 1 100 CRSS 0.8 0 0 6 12 18 24 30 0 5 -ID, DRAIN CURRENT (A) Figure 3. On Resistance Vs Vgs Voltage 15 20 25 30 Figure 4. Capacitance Characteristics 1.6 -10 VGS = 10V ID = 5.7A I D=5.7 -8 1.4 Normalized RDS(on) Vgs Gate to Source Voltage ( V ) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) -6 -4 -2 1.2 1.0 0.8 0 0 3 6 9 12 15 0.6 -50 Qg Gate Charge (nC) -25 0 25 50 75 100 125 150 TJ Juncation Temperature (C) Figure 5. Gate Charge Characteristics Figure 6. On-Resistance Variation with Temperature 3 PRELIMINARY Publication Order Number: DS-AM9435_G AM9435P Analog Power 0.25 100 ID = -5.7A VGS =0V 10 RDS(ON), ON-RESISTANCE (OHM) -IS, REVERSE DRAIN CURRENT (A) Typical Electrical Characteristics (P-Channel) TA = 125oC 1 0.1 25oC 0.01 0.001 0.0001 0 0.2 0.15 0.1 0.05 o TA = 25 C 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. On-Resistance with Gate to Source Voltage 50 VDS = VGS ID = -250mA 2 P(pk), PEAK TRANSIENT POWER (W) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) 2.2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 40 30 20 10 0 0.001 TA, AMBIENT TEMPERATURE (oC) SINGLE PULSE RqJA = 125C/W TA = 25C 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Vth Gate to Source Voltage Vs Temperature Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 D = 0 .5 R q J A(t ) = r(t ) + Rq J A R qJ A = 125o C/ W 0 .2 0.1 0 .0 5 P(p 0 .0 2 0 .0 1 t 0.01 t TJ - TA = P * R qJ A(t ) Dut y Cycle, D = t 1 / t 2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, T IME (sec) Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AM9435_G AM9435P Analog Power Package Information SO-8: 8LEAD H x 45° 5 PRELIMINARY Publication Order Number: DS-AM9435_G