SUD35N10-26P N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET® Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch TO-252 D Drain Connected to Tab G G D S Top View S N-Channel MOSFET Ordering Information: SUD35N10-26P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current 32 ID 12b, c 10b, c IDM Avalanche Current Pulse Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 50e IS 6.9b, c IAS 33 EAS 55 mJ 83 58 PD W 8.3b, c 5.8b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 40 TC = 25 °C Maximum Power Dissipation V 35 TA = 70 °C Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case Symbol Typical Maximum t ≤ 10 s RthJA 15 18 Steady State RthJC 1.5 1.8 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 50 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. 1/9 www.freescale.net.cn Unit °C/W SUD35N10-26P N-Channel 100 V (D-S) 175 °C MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V 165 mV/°C - 11 2.5 4.4 V ± 100 nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 40 µA A rDS(on) VGS = 10 V, ID = 12 A 0.021 gfs VDS = 15 V, ID = 12 A 25 0.026 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 60 Total Gate Charge Qg 31 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 2000 VDS = 12 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 12 A tr Rise Time td(off) Turn-Off Delay Time f = 1 MHz VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 47 nC 10 9 td(on) Turn-On Delay Time pF 180 Ω 1.5 10 15 10 15 15 25 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 50 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 40 IS = 10 A IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 50 75 ns 100 150 nC 38 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/9 www.freescale.net.cn SUD35N10-26P N-Channel 100 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 10 TC = - 55 °C VGS = 10 thru 7 V 8 I D - Drain Current (A) I D - Drain Current (A) 30 VGS = 6 V 20 TC = 25 °C 6 4 TC = 125 °C 10 2 VGS = 4 V 0 0.0 VGS = 5 V 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VDS - Drain-to-Source Voltage (V) 3 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.023 2500 Ciss 2000 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 2 0.022 VGS = 10 V 0.021 1500 1000 Coss 500 Crss 0.020 0 0 10 20 30 40 0 40 60 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 100 2.2 10 ID = 12 A 2.0 VDS = 50 V 8 ID = 12 A VGS = 10 V 1.8 VDS = 80 V 4 1.6 (Normalized) 6 r DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 1.4 1.2 1.0 0.8 2 0.6 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge 3/9 30 35 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.freescale.net.cn 175 SUD35N10-26P N-Channel 100 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.08 r DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 12 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.06 TA = 125 °C 0.04 TA = 25 °C 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 4 5 VSD - Source-to-Drain Voltage (V) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage rDS(on) vs. VGS vs. Temperature 4.5 200 4.0 ID = 250 µA 150 Power (W) V GS(th) (V) 3.5 3.0 100 2.5 50 2.0 1.5 - 50 - 25 0 25 50 75 100 125 150 0 0.001 175 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by rDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area 4/9 www.freescale.net.cn 1000 SUD35N10-26P N-Channel 100 V (D-S) 175 °C MOSFET 40 80 30 60 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 0 40 20 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5/9 www.freescale.net.cn SUD35N10-26P N-Channel 100 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 40 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 Normalized Thermal Transient Impedance, Junction-to-Case 6/9 www.freescale.net.cn 10 SUD35N10-26P N-Channel 100 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 7/9 www.freescale.net.cn 0.410 SUD35N10-26P N-Channel 100 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8/9 Return to Index www.freescale.net.cn SUD35N10-26P N-Channel 100 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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