SHENZHENFREESCALE SUD35N10

SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)a
Qg (Typ)
100
0.026 at VGS = 10 V
35
31 nC
• TrenchFET® Power MOSFET
• 100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Primary Side Switch
TO-252
D
Drain Connected to Tab
G
G
D
S
Top View
S
N-Channel MOSFET
Ordering Information: SUD35N10-26P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
Continuous Source-Drain Diode Current
32
ID
12b, c
10b, c
IDM
Avalanche Current Pulse
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
50e
IS
6.9b, c
IAS
33
EAS
55
mJ
83
58
PD
W
8.3b, c
5.8b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
40
TC = 25 °C
Maximum Power Dissipation
V
35
TA = 70 °C
Pulsed Drain Current
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambientb, d
Maximum Junction-to-Case
Symbol
Typical
Maximum
t ≤ 10 s
RthJA
15
18
Steady State
RthJC
1.5
1.8
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 50 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
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Unit
°C/W
SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
Forward Transconductancea
V
165
mV/°C
- 11
2.5
4.4
V
± 100
nA
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
40
µA
A
rDS(on)
VGS = 10 V, ID = 12 A
0.021
gfs
VDS = 15 V, ID = 12 A
25
0.026
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
60
Total Gate Charge
Qg
31
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
2000
VDS = 12 V, VGS = 0 V, f = 1 MHz
VDS = 50 V, VGS = 10 V, ID = 12 A
tr
Rise Time
td(off)
Turn-Off Delay Time
f = 1 MHz
VDD = 50 V, RL = 5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
47
nC
10
9
td(on)
Turn-On Delay Time
pF
180
Ω
1.5
10
15
10
15
15
25
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
50
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
40
IS = 10 A
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
50
75
ns
100
150
nC
38
12
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
10
TC = - 55 °C
VGS = 10 thru 7 V
8
I D - Drain Current (A)
I D - Drain Current (A)
30
VGS = 6 V
20
TC = 25 °C
6
4
TC = 125 °C
10
2
VGS = 4 V
0
0.0
VGS = 5 V
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
VDS - Drain-to-Source Voltage (V)
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.023
2500
Ciss
2000
C - Capacitance (pF)
r DS(on) - On-Resistance (Ω)
2
0.022
VGS = 10 V
0.021
1500
1000
Coss
500
Crss
0.020
0
0
10
20
30
40
0
40
60
80
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
100
2.2
10
ID = 12 A
2.0
VDS = 50 V
8
ID = 12 A
VGS = 10 V
1.8
VDS = 80 V
4
1.6
(Normalized)
6
r DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
20
1.4
1.2
1.0
0.8
2
0.6
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
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30
35
0.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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175
SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.08
r DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 12 A
TJ = 150 °C
10
TJ = 25 °C
1
0.0
0.06
TA = 125 °C
0.04
TA = 25 °C
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
4
5
VSD - Source-to-Drain Voltage (V)
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
rDS(on) vs. VGS vs. Temperature
4.5
200
4.0
ID = 250 µA
150
Power (W)
V GS(th) (V)
3.5
3.0
100
2.5
50
2.0
1.5
- 50
- 25
0
25
50
75
100
125
150
0
0.001
175
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by rDS(on)*
100 µs
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
10
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area
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1000
SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
40
80
30
60
Power Dissipation (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
0
40
20
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 40 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
Normalized Thermal Transient Impedance, Junction-to-Case
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10
SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
C1
e
b1
D1
e1
E1
L
gage plane height (0.5 mm)
L1
b
L3
H
D
L2
b2
C
A2
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.21
2.38
0.087
0.094
A1
0.89
1.14
0.035
0.045
A2
0.030
0.127
0.001
0.005
b
0.71
0.88
0.028
0.035
b1
0.76
1.14
0.030
0.045
b2
5.23
5.44
0.206
0.214
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.10
4.45
0.161
0.175
E
6.48
6.73
0.255
0.265
E1
4.49
5.50
0.177
0.217
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
9.65
10.41
0.380
L
1.40
1.78
0.055
0.070
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
1.15
1.52
0.040
0.060
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
Note
• Dimension L3 is for reference only.
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0.410
SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
Disclaimer
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