SUD40N06-25L N-Channel 60 V (D-S) 175 °C MOSFET VDS (V) 60 rDS(on) () ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TO-252 G Drain Connected to Tab G D S Top View S Order Number: SUD40N06-25L N-Channel MOSFET Parameter Gate-Source Voltage TC = 25C Continuous Drain Current (TJ = 175C)b TC = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH TC = 25C Maximum Power Dissipation TA = 25C Operating Junction and Storage Temperature Range Symbol Limit Unit VGS 20 V ID 30 30 IDM 100 IS 34 IAR 34 EAR 58 PD 75 1.4b, 2.5c TJ, Tstg –55 to 175 Symbol Limit A mJ W C Parameter Free Air, FR4 Board Mount Maximum Junction-to-Ambient Free Air, Vertical Mount Maximum Junction-to-Case 60 RthJA RthJC 110 2.0 Notes: a. Package limited. b. Free air, vertical mount. c. Surface mounted on 1” x 1” FR4 Board, t 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm 1/5 Unit www.freescale.net.cn C/W SUD40N06-25L N-Channel 60 V (D-S) 175 °C MOSFET Parameter Typa Max 2.0 3.0 Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 VDS = 60 V, VGS = 0 V, TJ = 175C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Currentb b D i Source S O State S R i Drain-Source Drain On On-State Resistance Forward Transconductanceb ID(on) rDS(on) DS( ) gfs VDS = 5 V, VGS = 10 V V "100 20 nA mA A A VGS = 10 V, ID = 20 A 0.022 VGS = 10 V, ID = 20 A, TJ = 125C 0.043 VGS = 10 V, ID = 20 A, TJ = 175C 0.053 VGS = 4.5 V, ID = 20 A 0.025 VDS = 15 V, ID = 20 A W S Dynamic Input Capacitance Ciss 1800 Output Capacitance Coss Reverse Transfer Capacitance Crss 100 Total Gate Chargec Qg 40 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 350 60 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 10 Turn-On Delay Timec td(on) 10 20 tr 9 20 28 50 7 15 Rise Timec Turn-Off Delay Timec Fall Timec td(off) VDS = 30 V V, VGS = 10 V V, ID = 40 A VDD = 30 V V,, RL = 0 0.9 9W ID^ 20 A, A VGEN = 10 V V, RG = 2 2.5 5W tf nC C 9 ns Source-Drain Diode Ratings and Characteristics (TC = 25C) Pulsed Current ISM 20 A Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/ms 48 100 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. 2/5 www.freescale.net.cn SUD40N06-25L N-Channel 60 V (D-S) 175 °C MOSFET Output Characteristics Transfer Characteristics 60 100 6V 5V VGS = 10, 9, 8, 7 V 80 I D – Drain Current (A) I D – Drain Current (A) 45 60 4V 40 20 30 TC = 125C 15 3V 25C –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.04 70 TC = –55C 50 r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 60 25C 125C 40 30 20 10 0 0.03 VGS = 4.5 V VGS = 10 V 0.02 0.01 0 0 12 24 36 48 60 0 15 ID – Drain Current (A) 45 60 ID – Drain Current (A) Capacitance Gate Charge 10 3000 V GS – Gate-to-Source Voltage (V) 2500 C – Capacitance (pF) 30 Ciss 2000 1500 1000 Coss 500 Crss 0 VDS = 30 V ID = 20 A 8 6 4 2 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) 3/5 60 0 10 20 30 40 Qg – Total Gate Charge (nC) www.freescale.net.cn 50 SUD40N06-25L N-Channel 60 V (D-S) 175 °C MOSFET On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 20 A 1.5 1.0 TJ = 150C TJ = 25C 10 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Drain Current vs. Case Temperature Safe Operating Area 200 50 100 Limited by rDS(on) I D – Drain Current (A) I D – Drain Current (A) 40 30 20 100 ms 10 1 ms 10 ms 1 100 ms dc, 1 s TC = 25C Single Pulse 10 0 0 25 50 75 100 125 150 0.1 175 0.1 TC – Case Temperature (C) 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 4/5 www.freescale.net.cn 3 SUD40N06-25L N-Channel 60 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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