SUD50N03-10P N-Channel 30 V (D-S) 175 °C MOSFET 30 0.010 @ VGS = 10 V 50A 0.015 @ VGS = 4.5 V 45 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-10P S N-Channel MOSFET Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175C) TC = 25C TC = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction)A TC = 25C Maximum Power Dissipation TA = 25C Operating Junction and Storage Temperature Range ID V 50A 40 IDM 180 IS 50 A 65C PD TJ, Tstg 5B –55 to 175 W C Maximum Junction-to-AmbientB RthJA 30 Maximum Junction-to-Case RthJC 2.3 C/W Notes: A. Package limited. B. Surface mounted on FR4 Board, t 10 sec. C. See SOA curve for voltage derating. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70822. 1/5 www.freescale.net.cn SUD50N03-10P N-Channel 30 V (D-S) 175 °C MOSFET V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, IDS = 250 mA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 24 V, VGS = 0 V, TJ = 125C 50 On-State Drain CurrentB ID(on) Drain-Source Breakdown Voltage Gate Threshold Voltage V 2 "100 VDS = 24 V, VGS = 0 V, TJ = 175C VDS = 5 V, VGS = 10 V rDS(on) Forward gfs A 0.0075 0.010 VGS = 10 V, ID = 15 A, TJ = 125C 0.016 VGS = 10 V, ID = 15 A, TJ = 175C 0.019 VGS = 4.5 V, ID = 15 A TransconductanceB VDS = 15 V, ID = 15 A mA A 150 50 VGS = 10 V, ID = 25 A B D i S Drain-Source On-State O S Resistance R i nA 0.011 20 W 0.015 40 S Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 360 Total Gate ChargeC Qg 45 Gate-Source ChargeC Qgs Gate-Drain ChargeC Qgd Turn-On Delay TimeC td(on) Rise TimeC Turn-Off Delay TimeC Fall TimeC 2700 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz VDS = 15 V, V VGS = 10 V, V ID = 50 A 70 nC C 8.5 9.5 12 20 tr VDD = 15 V,, RL = 0.3 W 7 15 td(off) ID ] 50 A, VGEN = 10 V, RG = 2.5 W 35 60 12 20 tf Continuous Current pF F 680 ns IS 50 Pulsed Current ISM 180 Forward VoltageB VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 40 80 ns Reverse Recovery Time A Notes: A. Guaranteed by design, not subject to production testing. B. Pulse test; pulse width v 300 ms, duty cycle v 2%. C. Independent of operating temperature. 2/5 www.freescale.net.cn SUD50N03-10P N-Channel 30 V (D-S) 175 °C MOSFET Typical Characteristics (25C Unless Otherwise Noted) 100 180 VGS = 10 thru 7 V 6V 80 I D – Drain Current (A) I D – Drain Current (A) 150 120 5V 90 60 4V 30 60 40 TC = 125C 20 25C 3V –55C 0 0 0 2 4 6 8 0 10 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) 80 0.030 TC = –55C r DS(on) – On-Resistance ( ) g fs – Transconductance (S) 25C 60 125C 40 20 0 0.025 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0 0 10 20 30 40 50 0 20 40 ID – Drain Current (A) V GS – Gate-to-Source Voltage (V) C – Capacitance (pF) 3000 2000 Coss Crss 0 40 50 VDS = 15 V ID = 50 A 8 6 4 2 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) 3/5 100 10 Ciss 1000 80 ID – Drain Current (A) 4000 60 30 0 10 20 30 Qg – Total Gate Charge (nC) www.freescale.net.cn SUD50N03-10P N-Channel 30 V (D-S) 175 °C MOSFET Typical Characteristics (25C Unless Otherwise Noted) 2.4 OnĆResistance vs. Junction Temperature VGS = 10 V ID = 50 A I S – Source Current (A) 2.0 r DS(on) – On-Resistance (W) (Normalized) SourceĆDrain Diode Forward Voltage 100 1.6 1.2 0.8 TJ = 150C TJ = 25C 10 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Thermal Ratings Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 60 50 I D – Drain Current (A) I D – Drain Current (A) 10 ms 40 30 20 100 Limited by rDS(on) 100 ms 1 ms 10 TC = 25C Single Pulse 10 10 ms 100 ms dc 0 1 0 25 50 75 100 125 150 175 0.1 Normalized Effective Transient Thermal Impedance 10 100 Normalized Thermal Transient Impedance, JunctionĆtoĆCase 2 1 1 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 30C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 3 Square Wave Pulse Duration (sec) 4/5 www.freescale.net.cn SUD50N03-10P N-Channel 30 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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