SUD25N06-45L N-Channel 60 V (D-S) 175 °C MOSFET VDS (V) 60 rDS(on) () ID (A) 0.035 @ VGS = 10 V 25 0.045 @ VGS = 4.5 V 22 D TO-252 G Drain Connected to Tab G D S Top View S Order Number: SUD25N06-45L N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175C) TC = 25C TC = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH TC = 25C Maximum Power Dissipation TA = 25C ID V 25 16 IDM 30 IS 25 IAR 25 EAR 31 PD Unit 50 2.5a A mJ W TJ, Tstg –55 to 175 C Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 60 Maximum Junction-to-Case RthJC 3.0 Operating Junction and Storage Temperature Range Parameter 1/5 www.freescale.net.cn C/W SUD25N06-45L N-Channel 60 V (D-S) 175 °C MOSFET Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 VDS = 60 V, VGS = 0 V, TJ = 175C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Currentb b D i S O S R i Drain-Source On-State Resistance Forward Transconductanceb ID(on) rDS(on) gfs VDS = 5 V, VGS = 10V V 3.0 "100 20 0.025 0.035 VGS = 10 V, ID = 12 A, TJ = 125C 0.045 0.063 VGS = 10 V, ID = 12 A, TJ = 175C 0.058 0.081 VGS = 4.5 V, ID = 12 A 0.036 0.045 15 mA A A VGS = 10 V, ID = 12 A VDS = 15 V, ID = 12 A nA 25 W S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1320 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 210 56 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 4.5 Turn-On Delay Timec td(on) 10 20 tr 10 20 31 45 10 20 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 26 VDS = 30 V V, VGS = 10 V V, ID = 25 A VDD = 30 V V,, RL = 1 1.2 2W ID ^ 25 A A, VGEN = 10 V V, RG = 7 7.5 5W tf 40 nC C 7.5 ns Source-Drain Diode Ratings and Characteristics (TC = 25C)a Pulsed Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr IF = 25 A, VGS = 0 V 60 IF = 25 A, di/dt = 100 A/ms 30 A 1.5 V 90 0.13 Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. 2/5 www.freescale.net.cn ns mC SUD25N06-45L N-Channel 60 V (D-S) 175 °C MOSFET Output Characteristics Transfer Characteristics 30 30 VGS = 5, 6, 7, 8, 9, 10 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 4V 12 6 18 12 TC = 125C 6 25C 1, 2, 3 V –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 50 0.100 TC = –55C r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 40 25C 30 125C 20 10 0 0.075 0.050 VGS = 4.5 V VGS = 10 V 0.025 0 0 6 12 18 24 30 0 6 12 ID – Drain Current (A) 24 30 24 30 ID – Drain Current (A) Capacitance Gate Charge 10 1800 V GS – Gate-to-Source Voltage (V) 1500 C – Capacitance (pF) 18 Ciss 1200 900 600 Coss 300 Crss 0 VDS = 30 V ID = 25 A 8 6 4 2 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) 3/5 60 0 6 12 18 Qg – Total Gate Charge (nC) www.freescale.net.cn SUD25N06-45L N-Channel 60 V (D-S) 175 °C MOSFET On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TJ = 150C I S – Source Current (A) r DS(on)– On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 12 A 1.5 1.0 TJ = 25C 10 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Drain Current vs. Case Temperature Safe Operating Area 30 50 I D – Drain Current (A) I D – Drain Current (A) 18 12 100 µs Limited by rDS(on) 24 10 1 ms 1 10 ms 100 ms dc, 1 s TC = 25C Single Pulse 6 0 0.1 0 25 50 75 100 125 150 175 0.1 TC – Case Temperature (C) 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 4/5 www.freescale.net.cn 3 SUD25N06-45L N-Channel 60 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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