SDR8200S4 thru SDR8200S12 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 200 AMPS 400 ─ 1200 VOLTS 15 μsec STANDARD RECOVERY HIGH CURRENT RECTIFIER Designer’s Data Sheet Part Number/Ordering Information SDR8200S __ __ __ │ │ └ Screening 1/ │ │ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV │ │ S = S Level │ └ Package Type │ __ = DO-8 │ └ Voltage/Family 4 = 400V 6 = 600V 8 = 800V 10 = 1000V 12 = 1200V • • • • • • • • • FEATURES: Forward Current to 200 Amps PIV to 1200 Volts Transient Voltage Rating of 200 Volts Above PIV Single Chip Construction Hermetically Sealed For High Power Applications For Reverse Polarity Version Add Suffix “R” Fast Recovery Version Available TX, TXV, and Space Level Screening Available MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA=25oC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA=25oC) Operating and Storage Temperature Maximum Thermal Resistance (Junction to Case) SDR8200S4 SDR8200S6 SDR8200S8 SDR8200S10 SDR8200S12 Symbol Value Unit VRRM Volts VR 400 600 800 1000 1200 IO 200 Amps IFSM 1400 Amps TOP & Tstg -55 to +175 RθJC 0.4 VRWM o C o C/W NOTES: 1/ Modified MIL-PRF-19500 Screening Flow – Consult Factory. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DO-8 DATA SHEET #: RP0013B DOC SDR8200S4 thru SDR8200S12 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop ((IF = 200 Adc Pulse, TJ = 25oC) Instantaneous Forward Voltage Drop (IF = 200 Adc Pulse, TJ = +175oC) Reverse Leakage Current (Rated VR pulse, TJ = 25oC) Reverse Leakage Current (Rated VR pulse, TJ = 175oC) Reverse Recovery Time (IFM = 200 A, VR = 400 V, di/dt = -25 μs, RS = 10Ω, CS = 0.5 μF, TA = 25oC) Symbol Value Unit VF 1.45 Vdc VF 1.40 Vdc IR 1 mA IR 40 mA trr 15 μsec CASE OUTLINE: DO-8 *For information on curves, contact the Factory Representative for Engineering Assistance. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RP0013B DOC