SPN9910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for most of synchronous buck converter applications. FEATURES 60V/60A, RDS(ON)= 10mΩ@VGS= 10V 60V/60A, RDS(ON)= 12.0mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 . TO-251 package design APPLICATIONS z DC/DC Converter z Load Switch Synchronous Buck Converter z PIN CONFIGURATION TO-252 TO-251 PART MARKING 2011 / 08 / 22 Ver.1 Page 1 SPN9910 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S 3 D Source Drain ORDERING INFORMATION Part Number Package Part Marking SPN9910T252RGB TO-252 SPN9910 SPN9910T251TGB TO-251 SPN9910 ※ SPN9910T252RGB: Tape Reel ; Pb – Free; Halogen – Free ※ SPN9910T251TGB: Tube ; Pb – Free; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=100℃ ID 60 47 A Pulsed Drain Current IDM 120 A Avalanche Current IAS 38 A PD 40 W EAS 123 mJ TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 62 ℃/W Power Dissipation TA=25℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.1mH , IAS = 38A , VDD = 25V. ) Operating Junction Temperature 2011 / 08 / 22 Ver.1 Page 2 SPN9910 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS≥5V,VGS =10V Forward Transconductance gfs Diode Forward Voltage VSD IS=60A,VGS =0V RDS(on) 1.0 2.5 VDS=0V,VGS=±20V VDS=48V,VGS=0V VDS=48V,VGS=0V TJ = 55 °C VGS= 10V,ID=15A VGS= 4.5V,ID=10A VDS=5V,ID=15A Drain-Source On-Resistance 60 ±100 1 5 60 V nA uA A 10 12 47 12 15 mΩ S 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2011 / 08 / 22 Ver.1 VDS=48V,VGS=4.5V ID= 12A td(off) tf 6.9 nC 10 VDS=15V,VGS=0V f=1MHz td(on) tr 24 3200 210 pF 145 20 VDD=30V, ID=2A, VGEN=10V, RG=3.3Ω 4 84.5 nS 6.5 Page 3 SPN9910 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 On-Resistance vs. Gate Voltage Fig. 3 Forward Characteristics Reverse Diodes Fig. 4 Gate Charge Characteristics Fig. 5 Vgs vs. Junction Temperature Fig. 6 On-Resistance vs. Temperature 2011 / 08 / 22 Ver.1 Page 4 SPN9910 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform 2011 / 08 / 22 Ver.1 Fig. 11 Unclamped Inductive Waveform Page 5 SPN9910 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2011 / 08 / 22 Ver.1 Page 6 SPN9910 N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE 2011 / 08 / 22 Ver.1 Page 7 SPN9910 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1 Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2011 / 08 / 22 Ver.1 Page 8