SPN7575 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7575 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. This device is particularly suited for E Bike application. APPLICATIONS z DC/DC Converter z Load Switch Power Tool z FEATURES 75V/80A, RDS(ON)= 11mΩ@VGS= 10V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design PIN CONFIGURATION( TO-220-3L ) PART MARKING 2011 / 08 / 04 Preliminary Page 1 SPN7575 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 D 3 S Drain Source ORDERING INFORMATION Part Number Package SPN7575T220TG TO-220-3L Part Marking SPN7575 ※ SPN7575T220TG: Tube ; Pb – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 75 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ ID 90 80 A Pulsed Drain Current IDM 370 A Avalanche Current IAS 52 A Power Dissipation TA=25℃ TA=70℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 500uH , IAS = 20A , VDD = 60V. ) PD 200 140 W EAS 165 mJ TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJC 0.75 ℃/W Operating Junction Temperature 2011 / 08 / 04 Preliminary Page 2 SPN7575 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance Forward Transconductance 75 2.0 VDS=0V,VGS=±20V VDS=60V,VGS=0V VDS=60V,VGS=0V TJ = 55 °C VDS≥5V,VGS =10V ±100 1 5 70 RDS(on) VGS= 10V, ID=40A gfs Single Pulse Avalanche Energy EAS Diode Forward Voltage VSD 4.0 VDS=5V,ID=20A VDS=60V, L=500uH, IAS=20A IS=30A,VGS =0V V nA uA A 11 12 52 mΩ S 58 mJ 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2011 / 08 / 04 Preliminary Page 3 VDS=15V,VGS=10V ID= 15A td(off) tf 20 nC 17 VDS=15V,VGS=0V f=1MHz td(on) tr 105 7760 320 pF 210 19.5 VDD=15V, ID=1A, VGEN=10V, RG=3.3Ω 11.5 118.5 11 nS SPN7575 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 On-Resistance vs. Gate Voltage Fig. 3 Forward Characteristics of Reverse Diode Fig. 4 Gate Charge Characteristics Fig. 5 Vgs vs. Junction Temperature Fig. 6 On Resistance vs. Junction Temperature 2011 / 08 / 04 Preliminary Page 4 SPN7575 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedence Fig. 10 Switching Time Waveform 2011 / 08 / 04 Preliminary Page 5 Fig. 11 Unclamped Inductive Waveform SPN7575 N-Channel Enhancement Mode MOSFET TO-220-3L PACKAGE OUTLINE 2011 / 08 / 04 Preliminary Page 6 SPN7575 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2011 / 08 / 04 Preliminary Page 7