TAYCHIPST VSSC520S

VSSC520S
200V
Surface Mount Trench MOS Barrier Schottky Rectifier
5.0A
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
Mechanical Data
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSC520S
Device marking code
UNIT
V5D
Maximum repetitive peak reverse voltage
VRRM
V
IF
5.0
IF
(2)
2.2
IFSM
100
A
dV/dt
10 000
V/μs
TJ, TSTG
- 40 to + 150
°C
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
200
(1)
A
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
TEST CONDITIONS
IF = 5.0 A
VR = 180 V
Reverse current per diode
VR = 200 V
Typical junction capacitance
TA = 25 °C
TA = 125 °C
SYMBOL
VF
(1)
TYP.
MAX.
1.19
1.70
0.67
0.75
UNIT
V
TA = 25 °C
2.0
-
μA
TA = 125 °C
2.0
-
mA
TA = 25 °C
IR
(2)
TA = 125 °C
4.0 V, 1 MHz
CJ
4
200
μA
3.2
25
mA
280
-
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
VSSC520S
RJA
(1)
95
RJM
(2)
9
UNIT
°C/W
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R
JA - junction to ambient
(2) Units mounted on PCB with 25 mm x 25 mm copper pad areas; thermal resistance R
JM - junction to mount
E-mail: [email protected]
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Web Site: www.taychipst.com
VSSC520S
200V
Surface Mount Trench MOS Barrier Schottky Rectifier
RATINGS AND CHARACTERISTIC CURVES
Average Power Loss (W)
Average Forward Rectified Current (A)
D = 0.3
5
4
3
2
D = 0.2
3.5
3.0
D = 1.0
D = 0.1
2.5
2.0
T
1.5
1.0
1
0.5
TM Measured at Terminal
D = tp/T
tp
0
0
25
75
50
100
125
150
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
175
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
D = 0.5 D = 0.8
4
0
10
TA = 125 °C
TA = 100 °C
1
100
TA = 25 °C
0.1
10
0
0.2
0.4
0.6
1.0
0.8
1.2
1.4
0.1
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
VSSC520S
4.5
6
5.0A
10
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
20
30
40
50
60
70
80
90
100
10
1
0.01
0.0001
10
Junction to Ambient
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
E-mail: [email protected]
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Web Site: www.taychipst.com