TC1601 REV4_20060510 2W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Via Holes Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 5 mm ! High Power Added Efficiency: PAE ≥ 43 % for Class A Operation ! Lg = 0.35 µm, Wg = 5 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 20 GHz. All devices are 100 % DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical applications include commercial and military high performance power amplifier. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions P1dB Output Power at 1dB Gain Compression Point , f GL Linear Power Gain, f MIN = 6 GHz VDS = 8 V, IDS = 500 mA = 6 GHz VDS = 8 V, IDS = 500 mA Intercept Point of the 3 -order Intermodulation, f = 6 GHz VDS = 8 V, IDS =500 mA,*PSCL = 20 dBm PAE Power Added Efficiency at 1dB Compression Power, f IDSS MAX UNIT 32.5 33 dBm 11 12 dB 43 dBm rd IP3 TYP = 6 GHz 43 % Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 1.2 A gm Transconductance at VDS = 2 V, VGS = 0 V 850 mS VP Pinch-off Voltage at VDS = 2 V, ID = 10 mA -1.7** Volts 18 Volts 6 °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO = 2.5 mA Rth Thermal Resistance 15 Note: * PSCL: Output Power of Single Carrier Level. * *For the tight control of the pinch-off voltage . TC1601’s are divided into 3 groups: (1)TC1601P1519 : Vp = -1.5V to -1.9V (2) TC1601P1620 : Vp = -1.6V to -2.0V (3)TC1601P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/4 TC1601 REV4_20060510 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) RECOMMANDED OPERATING CONDITION Symbol VDS VGS ID PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Dissipation Channel Temperature Storage Temperature Rating Symbol Parameter 12 V -5 V 1.2 A 7.7 W VDS Drain to Source Voltage ID Drain Current Rating 8V 500 mA 175 °C - 65 °C to +175 °C CHIP DIMENSIONS 1060 ± 12 D D D D 470± 12 G G G G Units: Micrometers Gate Pad: 76.0 x 59.5 Chip Thickness: 50 Drain Pad: 86.0 x 76.0 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/4 TC1601 REV4_20060510 TYPICAL SCATTERING PARAMETER (VDS = 8 V, IDS = 500 mA) FREQUENCY (GHz) 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 MAG 0.99574 0.98587 0.96544 0.95271 0.94572 0.94174 0.93933 0.93779 0.93676 0.93605 0.93554 0.93518 0.93491 0.93472 0.93458 0.93448 0.93441 0.93437 0.93435 0.93435 0.93436 0.93501 0.93615 0.93754 0.93905 0.9406 0.94213 0.94358 0.94495 0.94621 0.94736 0.94841 0.94935 0.95019 0.95096 0.95164 0.95225 S21 ANG -28.397 -53.672 -90.648 -113.2 -127.35 -136.8 -143.46 -148.39 -152.16 -155.14 -157.54 -159.53 -161.19 -162.59 -163.81 -164.86 -165.78 -166.6 -167.32 -167.97 -168.55 -172.24 -174.09 -175.19 -175.95 -176.5 -176.94 -177.29 -177.6 -177.87 -178.11 -178.34 -178.54 -178.73 -178.91 -179.08 -179.23 MAG 37.17 34.038 26.53 20.626 16.544 13.697 11.638 10.095 8.901 7.9524 7.1819 6.5443 6.0082 5.5514 5.1576 4.8147 4.5133 4.2465 4.0085 3.7949 3.6022 2.3682 1.7392 1.3557 1.0969 0.91049 0.77029 0.66149 0.57506 0.50515 0.44776 0.40006 0.36001 0.32605 0.29703 0.27204 0.25036 ANG 165.02 151.75 132.47 120.66 113.1 107.88 104.03 101.03 98.595 96.548 94.779 93.216 91.811 90.528 89.341 88.233 87.19 86.2 85.254 84.347 83.473 75.87 69.39 63.538 58.161 53.193 48.597 44.343 40.401 36.746 33.3519 30.196 27.254 24.506 21.933 19.5189 17.248 S12 MAG 0.0078177 0.014318 0.022319 0.026028 0.027836 0.028806 0.029372 0.029723 0.029952 0.030104 0.030208 0.030278 0.030325 0.030354 0.03037 0.030375 0.030371 0.030361 0.030345 0.030324 0.030298 0.02987 0.02924 0.02848 0.02764 0.02676 0.02587 0.02499 0.02415 0.02334 0.02259 0.0219 0.02126 0.02068 0.02015 0.01968 0.01926 S22 ANG 75.215 62.138 43.232 31.814 24.636 19.799 16.331 13.717 11.664 10.001 8.6153 7.4363 6.4143 5.5145 4.7118 3.9874 3.3272 2.7205 2.1586 1.635 1.1442 -2.6275 -5.282 -7.316 -8.8846 -10.055 -10.869 -11.358 -11.554 -11.487 -11.185 -10.675 -9.985 -9.1377 -8.1559 -7.06 -5.8689 MAG 0.16856 0.26521 0.3948 0.45652 0.48709 0.50388 0.51405 0.52079 0.5256 0.52927 0.53225 0.53479 0.53706 0.53916 0.54115 0.54309 0.545 0.54691 0.54882 0.55076 0.55273 0.57477 0.60072 0.62891 0.65763 0.68559 0.71196 0.73629 0.7584 0.77829 0.79607 0.81191 0.82598 0.83848 0.84959 0.85948 0.8683 ANG -68.237 -97.116 -125.14 -139.36 -147.65 -152.91 -156.46 -158.96 -160.78 -162.13 -163.14 -163.92 -164.51 -164.95 -165.29 -165.54 -165.72 -165.84 -165.92 -165.96 -165.97 -165.17 -164.02 -163.13 -162.62 -162.45 -162.56 -162.88 -163.33 -163.88 -164.47 -165.1 -165.74 -166.37 -167 -167.6 -168.19 * The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3/4 TC1601 REV4_20060510 SMALL SIGNAL MODEL, VDS = 8 V, IDS = 500 mA SCHEMATI Lg Rg Cgd Rd Gm Cgs Cds Ri T Rs Ls Rds Ld FET Parameter Lg = 0.0035 nH Rs = 0.23 Ohm Rg = 0.3 Ohm Ls = 0.0013 nH Cgs = 7.84 pF Cds = 0.864 pF Ri = 0.487 Ohm Rds = 51 Ohm Cgd = 0.44 pF Rd = 0.402 Ohm Gm = 840 mS Ld = 0.006 nH T = 3.9 psec TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 4/4