TRANSCOM TC2997B

TC2997B
REV0_20040412
1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
PHOTO ENLARGEMENT
• 20W Typical Power at 1.9 GHz
• 12 dB Typical Linear Power Gain at 1.9 GHz
• High Linearity: IP3 = 52 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Lg = 1 µm, Wg = 50 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
DESCRIPTION
The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor
with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the
GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications
include high dynamic range power amplifier for commercials applications.
ELECTRICAL SPECIFICATIONS ( @ 1.9 GHz )
Symbol
P1dB
CONDITIONS
MIN
TYP
MAX
UNIT
Output Power at 1dB Gain Compression Point VDS = 10.5 V, IDS = 5A
42
43
11
12
dB
52
dBm
dBm
GL
Linear Power Gain VDS = 10.5 V, IDS = 5A
IP3
Intercept Point of the 3rd-order Intermodulation VDS = 10.5 V, IDS = 5A, *PSCL = 32 dBm
PAE
Power Added Efficiency at 1dB Compression Power
40
%
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
12.5
A
gm
Transconductance at VDS = 2 V, VGS = 0 V
9000
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 60 mA
-1.7
Volts
22
Volts
0.9
°C/W
BVDGO
Rth
Drain-Gate Breakdown Voltage at IDGO =15 mA
Thermal Resistance
20
* PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
TC2997B
REV0_20040412
ABSOLUTE MAXIMUM RATINGS at 25 °C
Symbol
VDS
VGS
IDS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
HANDLING PRECAUTIONS:
Rating
12 V
-5 V
IDSS
37 dBm
100 W
175 °C
- 65 °C to +175 °C
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
FLANGE PACKAGE OUTLINE (in mm)
Gate
Source
Source
Drain
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (VD = 10.5 V, ID = 5 A)
FREQUENCY
(GHz)
1
2
3
4
5
6
S11
MAG
0.98447
0.89499
0.99590
0.99889
0.99929
0.99934
ANG
175.60
175.92
170.70
165.88
161.45
157.00
S21
MAG
0.89405
1.01350
0.12798
0.04273
0.02065
0.01208
S12
ANG
58.716
-35.168
-99.501
-109.58
-115.98
-121.61
MAG
0.004436
0.011258
0.002725
0.001526
0.001113
0.000908
S22
ANG
-11.953
-80.437
-127.56
-127.53
-127.40
-128.39
MAG
0.83047
0.96855
0.98934
0.98926
0.99039
0.99112
ANG
-171.23
-173.25
176.29
171.49
167.26
163.24
EVALUATION BOARD
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P2/3
TC2997B
REV0_20040412
PCB Material: FR4
ER = 4.6
Thickness = 31 mil
Unit: mil
TC2997B
Part Type
Resistor
Resistor
Reference Designator
R1
R2
Description
10 ohm 0603
0 ohm 0603
Manufacturer
Capacitor
Ci1
1.2 pF 0603
Murata
Capacitor
Capacitor
Ci2
Ci3
1.0 pF 0603
1.5 pF 0603
Murata
Murata
Capacitor
Ci4
1000 pF 0603
Murata
Capacitor
Ci5
10 uF 1206
Murata
Capacitor
Co1
2.2 pF 1212
Temex
Capacitor
Co2
1.5 pF 1212
Temex
Capacitor
Co3
1000 pF 0603
Murata
Capacitor
Co4
0.1 uF 0603
Murata
Capacitor
Co5
10 uF 1206
Murata
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P3/3