TC1401 REV5_20070502 0.5 W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 0.5W Typical Power at 12 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 9 dB Typical at 12 GHz ! High Linearity: IP3 = 37 dBm Typical at 12 GHz ! High Power Added Efficiency (PAE): 40% typical ! Via holes in the source pads ! Breakdown Voltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 1.2 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1401 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is with via-hole processes to reduce the thermal resistance and grounding inductance. The short gate length enables the device to be used in a circuit up to 20GHz. All devices are 100% DC tested to assure consistent quality. Backside gold plating is compatible with standard AuSn die-attach. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions P1dB Output Power at 1dB Gain Compression Point, f GL Linear Power Gain, f = 12GHz,VDS = 8 V, IDS = 120 mA = 12GHz,VDS = 8 V, IDS = 120 mA MIN TYP 26.5 27 dBm 8 9 dB rd MAX UNIT IP3 Intercept Point of the 3 -order Intermodulation, f = 12GHz,VDS = 8 V, IDS = 120 mA, PSCL = 14 dBm 37 dBm PAE Power Added Efficiency at 1dB Compression Power, f 40 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 300 mA = 12GHz gm Transconductance at VDS = 2 V, VGS = 0 V 200 mS VP Pinch-off Voltage at VDS = 2 V, ID = 2.4 mA -1.7* Volts 18 Volts 24 °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO =0.6 mA Rth Thermal Resistance 15 Note: * For the tight control of the pinch-off voltage . TC1401’s are divided into 3 groups: (1) TC1401P0710 : Vp = -1.5V to -1.9V (2) TC1401P0811 : Vp = -1.6V to -2.0V (3) TC1401P0912 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/4 TC1401 REV5_20070502 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol Parameter Rating VDS Drain-Source Voltage 12 V VGS Gate-Source Voltage -5 V IDS Drain Current IDSS Pin RF Input Power, CW PT Continuous Dissipation 1.9 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C 26 dBm CHIP DIMENSIONS 380± 12 D Units: Micrometers Chip Thickness: 50 470± 12 Gate Pad: 59.5 x 76.0 Drain Pad: 86.0 x 76.0 G TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/4 TC1401 REV5_20070502 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 75 45 60 2. 0 0.2 0.4 90 0.8 6 0. 0. 4 0.2 30 15 0 10.0 0 Swp Max 18 GHz 5 13 0 3. 0 4. 0 5. S11 Mag Max 0.06 0 12 Swp Max 18GHz 105 1.0 TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 8 V, IDS = 120 mA 15 165 0 -180 1.0 -105 0.8 6 2. 0 0. Swp Max 18GHz 0 3. 0 4. 0 5. S22 0.2 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 0 0 Swp Min 2 GHz 10.0 165 0.2 60 75 -1 20 -1 35 .0 -2 -1.0 90 -0.8 45 0. 4 -0 .6 -3 .0 -4 . -5. 0 0 5 13 30 15 0 -6 0.03 Per Div Swp Max 18 GHz 15 0 -3 0 -75 Swp Min 2GHz -90 105 0 12 Mag Max 8 S12 50 -1 5 -4 .4 -0 -15 -165 10.0 -10.0 2 -0. -180 -15 FREQUENCY S11 S21 (GHz) MAG ANG MAG ANG 2 0.8812 -118.69 6.8027 109.38 3 0.8615 -138.63 4.8458 95.45 4 0.8533 -150.38 3.7044 85.59 5 0.8495 -158.25 2.9703 77.67 6 0.8478 -164.04 2.4611 70.87 7 0.8472 -168.60 2.0880 64.79 8 0.8472 -172.36 1.8031 59.23 9 0.8476 -175.58 1.5788 54.09 10 0.8482 -178.43 1.3979 49.30 11 0.8489 179.00 1.2492 44.81 12 0.8497 176.64 1.1250 40.58 13 0.8506 174.44 1.0200 36.58 14 0.8516 172.37 0.9303 32.81 15 0.8526 170.40 0.8529 29.24 16 0.8536 168.52 0.7855 25.86 17 0.8546 166.71 0.7266 22.64 18 0.8556 164.97 0.6745 19.59 * The data does not include gate, drain and source bond wires. -2 -1.0 Swp Min 2 GHz .0 .4 .6 -0 -0 -105 -1 20 0 -6 -75 -90 2 Per Div 5 -4 -1 35 50 -1 2 -0. -0.8 -3 0 Swp Min 2GHz S12 MAG 0.0444 0.0475 0.0486 0.0488 0.0487 0.0485 0.0483 0.0481 0.0479 0.0478 0.0479 0.0481 0.0484 0.0489 0.0495 0.0503 0.0512 -3 .0 -4 -5..0 0 S21 -10.0 -165 S22 ANG 30.70 22.46 18.30 16.10 15.04 14.71 14.91 15.50 16.40 17.53 18.84 20.27 21.77 23.31 24.84 26.34 27.78 MAG 0.3464 0.3334 0.3462 0.3704 0.3997 0.4307 0.4619 0.4922 0.5210 0.5481 0.5733 0.5967 0.6182 0.6380 0.6562 0.6729 0.6881 ANG -60.23 -72.09 -80.95 -88.26 -94.57 -100.14 -105.13 -109.66 -113.80 -117.60 -121.11 -124.37 -127.39 -130.22 -132.86 -135.33 -137.66 SMALL SIGNAL MODEL, VDS = 8 V, IDS = 120 mA TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3/4 TC1401 REV5_20070502 SCHEMATI Lg PARAMETERS Cgd Rg Rd Lg Gm Cgs Cds Ri Ld Rds T 1.06 Ohm Ls 0.01 nH 0.298 pF 0.93 Ohm Cgs 2.29 pF Cds 1.85 Ohm Rds 119 Ohm Cgd 0.08 pF Rd 1.4 Ohm Gm 233.5 mS Ld T Ls Rs Rg Ri Rs 0.0813 nH 0.014 nH 3.9 psec SMALL SIGNAL MODEL, VDS = 8 V, IDS = 120 mA SCHEMATI Lg Rg TOM2 MODEL PARAMETERS Cgd Rid Rd Cgs Rdb Id Ris Cds Cbs Rs Ls Ld VTO ALPHA BETA GAMMA DELTA Q NG ND TAU RG RD RS IS N VBI VDELTA -1.8 4.98 0.303 0.021 0.142 0.99 0.1 0.01 3.9 0.9308 1.4 1.092 1E-11 1 1 0.2 V VMAX CGD CGS CDS RIS RID VBR RDB ps CBS Ohm TNOM Ohm LS Ohm LG mA LD V V AFAC NFING 0.5 0.0743 3.7075 0.303 1.853 0.0001 15 121.37 4.569 25 0.0096 0.0813 V pF pF pF Ohm Ohm V Ohm pF °C nH nH 0.014 nH 1 1 CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 4/4