TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • Low Noise Figure: PHOTO ENLARGEMENT NF = 0.5 dB Typical at 12 GHz • High Associated Gain: Ga = 12 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz • Breakdown Voltage: BVDGO ≥ 9 V • Lg = 0.25 µm, Wg = 160 µm • All-Gold Metallization for High Reliability • 100 % DC Tested DESCRIPTION The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP BVDGO Rth Conditions Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz Output Power at 1dB Gain Compression Point , f = 12GHz VDS = 4 V, IDS = 25 mA Linear Power Gain, f = 12GHz VDS = 4 V, IDS = 25 mA Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA Drain-Gate Breakdown Voltage at IDGO =0.08 mA Thermal Resistance MIN TYP MAX UNIT 0.7 10 0.5 12 dB dB 17 18 dBm 12 14 dB 40 55 -1.0 12 90 mA mS Volts Volts °C/W 9 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3 TC1101 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 2 V, IDS = 10 mA Rating 7.0 V -3.0 V IDSS 160 µA 14 dBm 150 mW 175 °C - 65 °C to +175 °C Frequency (GHz) 2 4 6 8 10 12 14 16 18 NFopt (dB) 0.38 0.40 0.42 0.45 0.50 0.55 0.64 0.78 0.95 GA (dB) 19.8 17.5 15.6 13.9 13.1 12.4 11.7 11.1 10.6 Γopt MAG ANG 0.99 4 0.90 9 0.82 18 0.76 29 0.69 43 0.63 55 0.56 65 0.45 76 0.34 90 Rn/50 1.52 1.05 0.77 0.61 0.51 0.44 0.37 0.30 0.24 CHIP DIMENSIONS D 250 ± 12 S Units: Micrometers Chip Thickness: 100 G S Gate Pad: 55 x 50 Drain Pad: 55 x 50 Source Pad: 55 x 60 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 4 TRANSCOM TC1101 TYPICAL SCATTERING PARAMETERS (TA=25 °C) 0.2 75 45 15 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 60 2. 0 0. 4 0.2 30 15 0 10.0 0 Swp Max 18 GHz 5 13 0 3. 0 4. 0 5. S11 90 0.8 Mag Max 0.15 0 12 6 0. Swp Max 18GHz 105 1.0 VDS = 2 V, IDS = 10 mA 165 0 -180 -10.0 -105 2. 0 1.0 0.8 -1 35 -1 20 6 0. 45 Swp Min 2 GHz Swp Max 18GHz 0 3. 0 4. 0 5. S22 0.2 15 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.2 0 0 0.6 10.0 165 0.4 .0 -2 60 75 -0.8 -1.0 -0 .6 90 0. 4 5 13 30 15 0 -3 0 0 -6 Swp Max 18 GHz 0.075 Per Div -90 Swp Min 2GHz -75 105 0 12 Mag Max 5 S12 50 -1 5 -4 .4 -0 -165 -3 .0 -4 . -5. 0 0 2 -0. -15 -180 -15 S11 MAG 0.9879 0.9740 0.9564 0.9364 0.9152 0.8939 0.8732 0.8536 0.8354 0.8188 0.8037 0.7901 0.7780 0.7671 0.7575 0.7491 0.7416 ANG -20.21 -29.96 -39.31 -48.20 -56.56 -64.40 -71.72 -78.52 -84.84 -90.72 -96.18 -101.25 -105.98 -110.39 -114.51 -118.37 -121.99 S21 MAG 4.3485 4.2452 4.1126 3.9594 3.7943 3.6242 3.4546 3.2894 3.1312 2.9813 2.8406 2.7092 2.5868 2.4731 2.3676 2.2697 2.1788 .0 -2 -1.0 Swp Min 2 GHz -0.8 -0 .6 -105 -1 20 0 -6 -90 -75 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 .4 -0 5 -4 -1 35 50 -1 1 Per Div 2 -0. -3 0 -3 .0 -4 . -5. 0 0 S21 -10.0 -165 Swp Min 2GHz S12 ANG 162.66 154.28 146.20 138.48 131.15 124.22 117.66 111.45 105.57 99.99 94.68 89.60 84.74 80.07 75.57 71.21 66.99 MAG 0.0296 0.0434 0.0560 0.0674 0.0774 0.0861 0.0937 0.1002 0.1058 0.1106 0.1148 0.1183 0.1214 0.1241 0.1264 0.1284 0.1302 S22 ANG 77.08 70.91 65.04 59.53 54.40 49.66 45.29 41.27 37.57 34.16 31.00 28.08 25.36 22.82 20.44 18.20 16.08 MAG 0.7367 0.7235 0.7068 0.6877 0.6676 0.6472 0.6276 0.6090 0.5919 0.5764 0.5627 0.5506 0.5402 0.5313 0.5239 0.5179 0.5132 ANG -11.76 -17.37 -22.68 -27.66 -32.28 -36.54 -40.46 -44.06 -47.37 -50.43 -53.28 -55.93 -58.41 -60.76 -62.99 -65.12 -67.16 • The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 5 TC1101 TYPICAL SCATTERING PARAMETERS (TA=25 °C) 90 60 15 165 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 45 2. 0 0.2 0.4 75 0.8 6 0. 0. 4 0.2 30 15 0 10.0 0 Swp Max 18 GHz 5 13 0 3. 0 4. 0 5. S11 0 12 Mag Max 0.1 Swp Max 18GHz 105 1.0 VDS = 4 V, IDS = 25 mA 0 -180 -15 -10.0 2. 0 1.0 -1 20 -105 0.8 -1 35 45 6 0. Swp Max 18GHz 0. 4 5 13 0 3. 0 4. 0 5. 0.2 15 10.0 3.0 4.0 5.0 0.8 1.0 0.6 0.4 0 0 0.2 10.0 165 2.0 .0 -2 60 75 -0.8 -1.0 90 -0 .6 Swp Min 2 GHz S22 30 15 0 -3 0 0 -6 Swp Max 18 GHz 0.01 Per Div -90 Swp Min 2GHz -75 105 0 12 Mag Max 6 S12 50 -1 5 -4 .4 -0 -165 -3 .0 -4 . -5. 0 0 2 -0. -180 -10.0 -3 0 S11 MAG 0.9861 0.9704 0.9507 0.9288 0.9059 0.8834 0.8618 0.8418 0.8234 0.8068 0.7919 0.7786 0.7668 0.7564 0.7471 0.7389 0.7316 ANG -22.03 -32.59 -42.66 -52.16 -61.05 -69.32 -76.97 -84.05 -90.59 -96.63 -102.23 -107.40 -112.21 -116.69 -120.86 -124.76 -128.41 S21 MAG 5.2729 5.1264 4.9406 4.7291 4.5045 4.2765 4.0524 3.8370 3.6330 3.4418 3.2639 3.0990 2.9466 2.8058 2.6758 2.5557 2.4446 .0 -2 -1.0 Swp Min 2 GHz -0.8 -0 .6 -105 -1 20 0 -6 -90 -75 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 .4 -0 5 -4 -1 35 50 -1 2 Per Div 2 -0. S21 -3 .0 -4 . -5. 0 0 -15 -165 Swp Min 2GHz S12 ANG 161.97 153.31 145.03 137.18 129.78 122.83 116.31 110.19 104.41 98.96 93.79 88.86 84.16 79.65 75.31 71.12 67.06 MAG 0.0218 0.0318 0.0408 0.0488 0.0558 0.0618 0.0669 0.0712 0.0749 0.0781 0.0807 0.0830 0.0850 0.0867 0.0882 0.0895 0.0906 S22 ANG 76.68 70.37 64.44 58.94 53.89 49.28 45.10 41.30 37.85 34.72 31.86 29.24 26.83 24.60 22.54 20.62 18.82 MAG 0.7718 0.7586 0.7422 0.7239 0.7050 0.6865 0.6690 0.6530 0.6386 0.6260 0.6150 0.6057 0.5978 0.5913 0.5861 0.5821 0.5790 ANG -10.24 -15.08 -19.62 -23.82 -27.69 -31.23 -34.49 -37.49 -40.28 -42.90 -45.37 -47.73 -49.99 -52.18 -54.32 -56.41 -58.46 • The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 6 TRANSCOM TC1101 SMALL SIGNAL MODEL, VDS = 2 V, IDS = 10 mA SCHEMATIC Lg Cgd Rg Rd Parameters Gm Cgs Cds Ri PARAMETERS Ld Lg Rds Rg T Cgs Rs Ri Cgd Ls Parameters 0.04708 nH Rs 1.46 Ohm Ls 0.207 pF Cds 3.68 Ohm Rds 0.0269 pF Rd Gm 54.8 mS Ld T 3.34 psec 1.29 Ohm 0.001 nH 0.0684 pF 321.5 Ohm 1.525 Ohm 0.0379 nH SMALL SIGNAL MODEL, VDS = 4 V, IDS = 25 mA SCHEMATIC Lg Cgd Rg Rd PARAMETERS Parameters Gm Cgs Cds Ri Ld Rds Lg T Rg Cgs Rs Ri Ls Parameters 0.04708 nH Rs 1.46 Ohm Ls 0.254 pF Cds 5.91 Ohm Rds Cgd 0.0192 pF Rd Gm 66.0 mS Ld T 3.64 psec 1.25 Ohm 0.001 nH 0.0666 pF 377.8 Ohm 1.525 Ohm 0.0379 nH TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 7 TC1101 CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 8