ETC TC1102

TRANSCOM
TC1102
January 2002
Super Low Noise GaAs FETs
FEATURES
•
•
•
•
•
PHOTO ENLARGEMENT
Low Noise Figure:
NF = 0.5 dB Typical at 12 GHz
High Associated Gain:
Ga = 13 dB Typical at 12 GHz
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
100 % DC Tested
DESCRIPTION
The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable
for low noise application including a wide range of commercial and military applications. All devices are
100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression
or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
NF
Ga
IDSS
gm
VP
BVDGO
Rth
MIN
CONDITIONS
Noise Figure at VDS = 2 V, IDS = 10 mA,, f = 12GHz
Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA
Drain-Gate Breakdown Voltage at IDGO =0.08 mA
Thermal Resistance
11
5
TYP
0.5
13
40
55
-1.0
8
90
MAX
0.7
UNIT
dB
dB
mA
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
9
TC1102
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
VDS
VGS
IDS
IGS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 2 V, IDS = 10 mA
Frequency
NFopt
(GHz)
(dB)
2
0.30
4
0.32
6
0.34
8
0.37
10
0.42
12
0.47
14
0.56
16
0.70
18
0.87
Rating
5V
-3.0 V
IDSS
160 µA
14 dBm
150 mW
175 °C
- 65 °C to +175 °C
GA
(dB)
19.0
17.4
15.7
14.3
12.9
11.9
11.4
11.2
10.9
Γopt
MAG
0.98
0.84
0.68
0.51
0.38
0.28
0.25
0.32
0.49
ANG
15
30
50
76
107
146
193
250
317
Rn/50
0.40
0.35
0.26
0.19
0.12
0.08
0.07
0.11
0.23
CHIP DIMENSIONS
280 ± 12
D
S
S
250 ± 12
G
Units: Micrometers
Chip Thickness: 100
Gate Pad: 55 x 60
Drain Pad: 55 x 60
Source Pad: 55 x 14
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science- Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
10
TRANSCOM
TC1102
TYPICAL SCATTERING PARAMETERS (TA=25°°C)
90
60
15
165
10.0
3.0
4.0
5.0
2.0
0.8
1.0
0.6
45
2.
0
0.2
0.4
75
0.8
6
0.
0.
4
0.2
30
15
0
10.0
0
Swp Max
18 GHz
5
13
0
3.
0
4. 0
5.
S11
0
12
Mag Max
0.15
Swp Max
18GHz
105
1.0
VDS = 2 V, IDS = 10 mA
0
-180
-15
-10.0
-1
20
2.
0
1.0
6
0.
45
30
Swp Min
2 GHz
Swp Max
18GHz
0
3.
0
4. 0
5.
S22
0.2
15
10.0
3.0
4.0
5.0
2.0
0.8
1.0
0.6
0.4
0
0
0.2
165
10.0
60
75
-105
-1
35
.0
-2
-0.8
-1.0
90
5
13
0.
4
-0
.6
-3
.0
-4
.
-5. 0
0
Swp Max
18 GHz
-75
0.075
Per Div
0
-6
Swp Min
2GHz
15
0
-3
0
50
-1
-90
105
0
12
Mag Max
5
S12
5
-4
.4
-0
-165
0.8
2
-0.
-180
-15
S11
MAG
0.9909
0.9805
0.9673
0.9524
0.9367
0.9209
0.9057
0.8913
0.8780
0.8659
0.8551
0.8453
0.8366
0.8290
0.8222
0.8163
0.8111
ANG
-20.88
-30.94
-40.57
-49.69
-58.26
-66.26
-73.69
-80.57
-86.92
-92.79
-98.22
-103.24
-107.89
-112.20
-116.22
-119.96
-123.45
S21
MAG
4.1640
4.0654
3.9385
3.7916
3.6326
3.4682
3.3038
3.1430
2.9885
2.8417
2.7033
2.5737
2.4526
2.3399
2.2349
2.1373
2.0464
.0
-2
-1.0
Swp Min
2 GHz
-0.8
-0
.6
-105
-1
20
0
-6
-90
-75
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
.4
-0
5
-4
-1
35
50
-1
1
Per Div
2
-0.
-3
0
-3
.0
-4
.
-5. 0
0
S21
-10.0
-165
Swp Min
2GHz
S12
ANG
163.83
156.02
148.51
141.35
134.56
128.16
122.13
116.45
111.09
106.02
101.22
96.66
92.32
88.16
84.17
80.33
76.64
MAG
0.0305
0.0447
0.0577
0.0694
0.0798
0.0888
0.0966
0.1033
0.1090
0.1139
0.1181
0.1216
0.1247
0.1272
0.1295
0.1313
0.1329
S22
ANG
77.18
71.04
65.20
59.71
54.59
49.85
45.48
41.45
37.74
34.32
31.16
28.24
25.52
22.98
20.61
18.38
16.28
MAG
0.7466
0.7346
0.7193
0.7019
0.6835
0.6650
0.6471
0.6302
0.6146
0.6005
0.5880
0.5770
0.5674
0.5593
0.5525
0.5468
0.5423
ANG
-11.01
-16.27
-21.26
-25.95
-30.31
-34.35
-38.08
-41.53
-44.73
-47.70
-50.49
-53.11
-55.59
-57.95
-60.21
-62.39
-64.49
• The data does not include gate, drain and source bond wires.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
11
TC1102
SMALL SIGNAL MODEL, VDS = 2 V, IDS = 10 mA
SCHEMATIC
Lg
Cgd
Rg
PARAMETERS
Ld
Parameters
Gm
Cgs
Ri
Rd
Cds
Lg
Rds
T
Parameters
0.0384 nH
Rg
0.97 Ohm
Cgs
Rs
0.222 pF
Ri
Ls
Cgd
1.78 Ohm
Rs
1.72 Ohm
Ls
0.001 nH
Cds
0.061 pF
Rds
0.0273 pF
Rd
Gm
53.3 mS
Ld
T
1.49 psec
328 Ohm
1.698 Ohm
0.0286 nH
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool:
Tweezers; Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond
Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at
all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
12